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Darlington complementary silicon power transistors.
Designed for general-purpose amplifier and low frequency switching applications.
Features:
• High DC current gain - hFE = 3500 (typical) at IC= 5.0A dc.
• Collector-emitter sustaining voltage - at 100mA
VCEO (sus) = 80V dc (minimum) - 2N6058.
•Monolithic construction with built-in-base-emitter shunt resistors.
(TO-3)
Style 1:
Pin 1. Base
2. Emitter
Collector (Case)
Darlington
12 Ampere
Complementary
Silicon
Power Transistors
80 - 100 Volts
150 Watts
(TO-3)
Case 1-07
Dimensions Minimum Maximum
A1.550 (39.37) Reference
B - 1.050 (26.67)
C 0.250 (6.35) 0.335 (8.51)
D0.038 (0.97) 0.043 (1.09)
E0.055 (1.40) 0.070 (1.77)
G0.430 (10.92) BSC
H0.215 (5.46) BSC
K0.440 (11.18) 0.480 (12.19)
L0.665 (16.89) BSC
N - 0.830 (21.08)
Q0.151 (3.84) 0.165 (4.19)
U1.187 (30.15) BSC
V0.131 (3.33) 0.188 (4.77)
Dimensions : Inches (Millimetres)
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Maximum Ratings (1)
Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO
80
V dcCoIIector-Base Voltage VCB
Emitter-Base Voltage VEB 5.0
Collector Current-Continuous
-Peak
IC12
20 Adc
Base Current IB0.2 Adc
Total Device Dissipation at TC = 25°C
Derate above 25°C
PD150
0.857
W
W/°C
Operating and Storage Junction Temperature Range TJ, TStg -65 to +200°C °C
Characteristic Symbol Maximum Unit
Thermal Resistance, Junction-to-Case RθJC 1.17 °C/W
Thermal Characteristics
Power Derating
TC, Case Temperature (°C)
PD, Power Dissipation (Watts)
(1) Indicates JEDEC Registered Data.
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*Electrical Characteristics (TC= 25°C unless otherwise noted)
Characteristic Symbol Minimum Maximum Unit
Off Characteristics
Collector-Emitter Sustaining Voltage (2)
(lC = 100mA dc, lB= 0) 2N6058 VCEO (sus) 80 - V dc
Collector Cut off Current
(VCE = 40V dc, IB= 0) 2N6058 ICEO - 1.0
mA dc
Collector Cut off Current
(VCE = Rated VCEO, VBE (off) = 1.5V dc)
(VCE = Rated VCEO, VBE (off) = 1.5V dc, TC= 150°C)
ICEX - 0.5
5.0
Emitter Cut off Current
(VBE = 5.0V dc, IC= 0) IEBO - 2.0
On Characteristics (2)
DC Current Gain
(IC= 6.0A dc, VCE = 3.0V dc)
(IC= 12A dc, VCE = 3.0V dc)
hFE 750
100
18,000
-
-
Collector-Emitter Saturation Voltage
(IC= 6.0A dc, lB= 24mA dc)
(IC= 12A dc, lB= 120mA dc)
VCE (sat) -
-
2.0
3.0
V dc
Base-Emitter Saturation Voltage
(IC= 12A dc, IB= 120mA dc) VBE (sat) - 4.0
Base-Emitter On Voltage
(IC= 6.0A dc, VCE = 3.0V dc) VBE (on) - 2.8
Dynamic Characteristics
Magnitude of Common-Emitter Small-Signal Short-Circuit Forward
Current Transfer Ratio
(IC = 5.0A dc, VCE = 3.0V dc, f = 1.0MHz)
hfe4.0 - MHz
Output Capacitance
(VCB = 10V dc, IE= 0, f = 0.1MHz) 2N6058 Cob -500
300 pF
Small-Signal Current Gain
(IC= 5.0A dc, VCE = 3.0V dc, f = 1.0kHz) hfe 300 - -
*Indicates JEDEC Registered Data.
(2) Pulse test: Pulse Width = 300µs, Duty Cycle = 2.0%.
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Switching Times Test Circuit
r (t), Effective Transient Thermal
Resistance (Normalized)
t, Time (ms)
Thermal Response
IC, Collector Current (Amperes)
VCE, Collector-Emitter Voltage (Volts)
Active-Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC– VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data is based on TJ (pk) = 200°C; TCis variable depending
on conditions. Second breakdown pulse limits are valid for duty
cycles to 10% provided TJ (pk) ≤200°C; TJ (pk) may be calculated
from the data. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
For NPN Test Circuit Reverse Diode and Voltage Polarities.
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hfe, Small-Signal Current Gain
f, Frequency (kHz)
Small-Signal Current Gain
C, Capacitance (pF)
VR, Reverse Voltage (Volts)
Capacitance
hFE, DC Current Gain
IC, Collector Current (Amperes)
DC Current Gain
V, Voltage (Volts)
IC, Collector Current (Amperes)
“On” Voltages
VCE, Collector-Emitter Voltage
(Volts)
IB, Base Current (mA)
Collector Saturation Region
Part Number Table
Description Part Number
Darlington Transistor, TO-3 2N6058
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