SYMBOLS & CODES EXPLAINED j p 7 e 4 . { i a i ( i . . [A G n LINE TYPE [DEVICE Vp. BVdss (BVgss _| \ass Igss@ ND] COMMON SOURCE/ Rds | MAX. | IN STRUC|Y200 (EO No. No. [DISS @ | | Id Ig |Vgs=0O8 we pi Vgs /Vds gfs Yos Cis FREE |MAX|-TURE | s/a jAD @25C |ld=0 |Vds | Vds>Vp!& mhos. AIR [TEMP T0200/D E w) | (vy | ty) Vv} | tA) | A A Vv MAX ee C Ser. v- Matched Type, also listed in STRUCTURE Section 13, Category 6 A typical afg D ~ Diffused @ Phototransistor, also listed in Pulsed E Epitaxial tooe bonr ae ; % High Frequency (Yes) Ge GermaniumPE 5 (i- Yes PE Planar Epitaxial PL Planar eet tg: . # Junction Type A With infinite heat sink A_y - Y, * Insulated Gate (MOS Type) T Above 28C; For additional is 9 _ Matched pair or dual information, consult manufacturer. + Not at given test conditions A Switching, other uses % Maximum Zw Chopper, Other uses + * Pulsed D Noise figure 8db or below VgglCut off} mi fT = Plastic Package A. Vogt Threshold) Vv H Hometaxial % Typical % Maximum $ Tetrode # Mini A Not given at test conditions % Insulated Gate (MNOS Type} - imimum R [_# = Mini T Rosion) # Vps * A Depletion Mode, Type A $ Depletion-Enhancement Mode, Type B x Enhancement Mode, Type C a A - BYv T- sv bso DSX A pss @ Ves = Qand Vos Vp Ves 790 Minimum Typical Pulsed ON e+ P+ , (Output Shorted) Not given at test conditions Typical Cass Cag0 g-c igs JJunction $Storage AAmbient CCase A Phototransistor Device A Tetrode Device % Composite Type BYngo ! Lo mE al ks esaleain M wa Re aay alg we TYPE No. fT - 40 # g0c * 45C $ 100c # 50 D Free Air Zz 60C y Typical Vatue 75C A- > 100C Symbols indicate temperature at which derating starts. A Q With infinite heat sink Following symbols indicate temp W Power at which derating starts: Output f- 40% (- ec % gor * 45C ~- 70C A Pulsed #- 50% $$ - 100C %_ min * 0-65C A Ambient @ 70-80 C Case # 85-100C J Junction # 110-125C S Storage 130-135C ~ 140-165C 170-200C v Over 200C D - te . $ Minimum # Pulsed or Peak a T At temperature 25C Case D- 1, # Pulsed $ Minimum aE t sraucly indicated Maximum tyt % * Ton t, # ~ ts QD ~ AtVog < Max. Veg (see mfr. spec.) FT - ttt * Tote # Icex ky A - rs * = Ton * Toft 1 cer CEO) CES @ AtTemp. 25C Case Vv Typical Value # Pulsed $ Typical tT AtTemp. > 25C # Rated max. operating frequency f # BV __ or punch-through t <b x a Gain bandwidth product (ft) Q- BV ces * Pulsed A- 1 * Maximum frequency of oscillation g BV BVsoisus) B-1 Q Figure of merit (frequency for CER $ Minimum B unity power gain) op A Minimum Z- Maximum 7 At Temp. 25C Case fon a $ Minimum ~~ "fe * ~ Available to # Pulsed selected range $ ~ Tetrode Typical narrower than # Radiation Resistant Device (Also see top of reverse side of card.)IN ORDER OF (1) DISSIPATION TYPE E Vv @ IN C-/200 |E O No. DISS @ Vgs= Cis FREE |MAX |TURE | s/a_ |AD @25C Vds>V AIR_ |TEMP T0200/D E 75 Vv HSC3954 UC23 K1201 173 25K170 6.0 4c 6.0t 2SK24F 6.0t 3SK15A 2.0% |6.0A 3SK18 40559 K3 NKT80113 $D5051* 528BSY A191 A196 Vv A610S v BFS67P BSV39P K1003 SFT602 2SK19B 3UT40 A198t BFS28R C85 C682 C684A NPC 108 $1232N S1235N MEM200t 38K33 $U20759 2N5801 2SK32 D.A.T.A. 20 25 30 50 25 50 50 18 20t | 150 30 30 5.0m 600u 5.0m 00u |1.5m 40m] 1.4mA 10m| 1.5m 10m) 12m 5.0mA 5.0m 50mA 6.0m 5.0m 10n m 40n m 10m 15m 06k% 10nd |0.0 4.0nA |0.0 1.0n 0.0 1.0n |0.0 0.0 5D 10n 26 100p 10.0 10n (0.0 m SYMBOLS AND CODES 4.0p# 900f% | 1.3m 1.0m 1.0m 1.0m 800u 6.0p* 16p Sp 10p* * .Im 3pt* | 1.1m * Jim 3pt* [1.1m 5. 2.0m 6.0p* j1.1 . 6.0p* |1.1 x 7.0p% 5p 7m 15p# |2.0m 2.4m Am EXPLAINED IN INTERPRETER 125J |E# * PE e L21e u23 u TO72 TOS a R67a a u101 u u104 TO72 TO72 T0104 75