2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178 1 March 1, 2000-00
FEATURES
• 7400 Series T
2
L Compatible
• Transfer Ratio, 35% Typical
• Coupling Capacitance, 0.5 pF
• Single, Dual, & Quad Channel
• Industry Standard DIP Package
• Underwriters Lab File #E52744
• VDE Approvals #0884
(Optional with Option 1, Add -X001 Suffix)
DESCRIPTION
The IL74 is an optically coupled pair with a
Gallium Arsenide infrared LED and a silicon
NPN phototransistor. Signal information,
including a DC level, can be transmitted by the
device while maintaining a high degree of
electrical isolation between input and output.
The IL74 is especially designed for driving
medium-speed logic, where it may be used to
eliminate troublesome ground loop and noise
problems. Also it can be used to replace relays
and transformers in many digital interface
applications, as well as analog applications
such as CRT modulation.
The ILD74 has two isolated channels in a sin-
gle DIP package; the ILQ74 has four isolated
channels per package.
V
DE
pin one ID
.255 (6.48)
.268 (6.81)
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4° typ.
.100 (2.54) typ.
10°
3°–9°
.300 (7.62)
typ.
.018 (.46)
.022 (.56) .008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30)
.130 (3.30)
.150 (3.81)
.020 (.51 )
.035 (.89 )
.230(5.84)
.250(6.35)
4321
.031 (0.79)
.050 (1.27)
5678
.255 (6.48)
.265 (6.81)
.779 (19.77 )
.790 (20.07)
.030 (.76)
.045 (1.14)
4°
.100 (2.54)typ.
10°
typ.
3°–9°
.018 (.46)
.022 (.56) .008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30)
pin one ID
.130 (3.30)
.150 (3.81)
.020(.51)
.035 (.89)
8 7 6 5 4 3 2 1
9 10 11 12 13 14 15 16
.031(.79)
.300 (7.62)
typ.
.230 (5.84)
.250 (6.35)
.050 (1.27)
1
2
3
4
8
7
6
5
Emitter
Collector
Collector
Emitter
Anode
Cathode
Cathode
Anode
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
Emitter
Collector
Collector
Emitter
Emitter
Collector
Collector
Emitter
Anode
Cathode
Cathode
Anode
Anode
Cathode
Cathode
Anode
.010 (.25)
typ.
.114 (2.90)
.130 (3.0)
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one ID
6
5
4
12
3
18°
3°–9°
.300–.347
(7.62–8.81)
4°
typ.
Dimensions in inches (mm)
Single Channel
Dual Channel
Quad Channel
1
2
3
6
5
4
Base
Collector
Emitter
Anode
Cathode
NC
SINGLE CHANNEL
IL74
DUAL CHANNEL
ILD74
QUAD CHANNEL
ILQ74
Phototransistor Optocoupler
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA IL/ILD/ILQ74
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178 2 March 1, 2000-00
Maximum Ratings
Emitter
(each channel)
Peak Reverse Voltage ...................................................................... 3.0 V
Continuous Forward Current .......................................................... 60 mA
Power Dissipation at 25
°
C........................................................... 100 mW
Derate Linearly from 25
°
C ..................................................... 1.33 mW/
°
C
Detector
(each channel)
Collector-Emitter Breakdown Voltage ............................................... 20 V
Emitter-Base Breakdown Voltage..................................................... 5.0 V
Collector-Base Breakdown Voltage .................................................. 70 V
Power Dissipation at 25
°
C........................................................... 150 mW
Derate Linearly from 25
°
C ....................................................... 2.0 mW/
°
C
Package
Isolation Test Voltage (t=1.0 sec.) ........................................... 5300 V
RMS
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C.................................................................
≥
10
12
Ω
V
IO
=500 V,
T
A
=100
°
C...............................................................
≥
10
11
Ω
Total Package Dissipation
at 25
°
C Ambient (LED Plus Detector)
IL74.......................................................................................... 200 mW
ILD74 ....................................................................................... 400 mW
ILQ74 ....................................................................................... 500 mW
Derate Linearly from 25
°
C
IL74 ...................................................................................... 2.7 mW/
°
C
ILD74 ................................................................................. 5.33 mW/
°
C
ILQ74 ................................................................................. 6.67 mW/
°
C
Creepage ...................................................................................
≥
7.0 mm
Clearance...................................................................................
≥
7.0 mm
Storage Temperature .................................................... –55
°
C to +150
°
C
Operating Temperature ................................................ –55
°
C to +100
°
C
Lead Soldering Time at 260
°
C ......................................................10 sec.
Electrical Characteristics
T
A
=25
°
C
Symbol Min. Typ. Max. Unit Condition
Emitter
Forward Voltage
V
F
—1.3 1.5 V
I
F
=20 mA
Reverse Current
I
R
—0.1 100
µ
A
V
R
=3.0 V
Capacitance
C
O
—25 —pF
V
R
=0
Detector
Breakdown
Voltage,
Collector-Emitter
BV
CEO
20 50 —V
I
C
=1.0 mA
Leakage Current,
Collector-Emitter
I
CEO
—5.0 500 nA
V
CE
=5.0 V
I
F
=0
Capacitance,
Collector-Emitter
C
CE
—10.0 —pF
V
CE
=0,
F=1.0 MHz
Package
DC Current Transfer
Ratio CTR
DC
12.5 35 —%
I
F
=16 mA,
V
CE
=5.0 V
Saturation Voltage,
Collector-Emitter
V
CEsat
—0.3 0.5 V
I
C
=2.0 mA
I
F
=16 mA
Resistance, Input to
Output
R
IO
—100 —G
Ω
—
Capacitance, Input
to Output
C
IO
—0.5 —pF —
Switching Times
t
ON
,
t
OFF
—3.0 —
µ
sR
L
=100
Ω
,
V
CE
=10 V,
I
C
=2.0 mA
Figure 1. Forward voltage versus forward current
Figure 2. Normalized non-saturated and saturated
CTR at
T
A
=25
°
C versus LED current
Figure 3. Normalized non-saturated and saturated
CTR at
T
A
=50
°
C versus LED current
Figure 4. Normalized non-saturated and saturated
CTR at
T
A
=70
°
C versus LED current
100101.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
IF - Forward Current - mA
VF - Forward Voltage - V
Ta = -55°C
Ta = 25°C
Ta = 85°C
.1 1 10 100
1.5
1.0
0.5
0.0
IF - LED Current - mA
NCTR - Normalized CTR
Normalized to:
VCE = 10 V, IF = 10 mA
TA = 25°C
CTRce(sat) VCE = 0.4 V
NCTR(SAT)
NCTR
100101.1
0.0
0.5
1.0
1.5
IF - LED Current - mA
TA = 50°C
NCTR - Normalized CTR
NCTR(SAT)
NCTR
Normalized to:
VCE = 10V, IF = 10 mA, TA = 25°C
CTRce(sat) VCE = 0.4V
100101.1
1.5
1.0
0.5
0.0
IF - LED Current - mA
NCTR - Normalized CTR
Normalized to:
VCE = 10 V, IF = 10 mA
TA = 25°C
CTRce(sat) VCE = 0.4V
TA = 70°C
NCTR(SAT)
NCTR
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA IL/ILD/ILQ74
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178 3 March 1, 2000-00
Figure 5. Normalized non-saturated and saturated CTR
at
T
A
=85
°
C versus LED current
Figure 6. Collector-emitter current versus temperature
and LED current
Figure 7. Collector-emitter leakage current versus
temperature
Figure 8. Normalized CTR
cb
versus LED current
and temperature
Figure 9. Collector base photocurrent versus
LED current
Figure 10. Normalized photocurrent versus
I
F
and temperature
Figure 11. Normalized non-saturated HFE versus
base current and temperature
Figure 12. Normalized saturated HFE versus base
current and temperature
.1 1 10 100
1.5
1.0
0.5
0.0
IF - LED Current - mA
NCTR - Normalized CTR
Normalized to:
VCE = 10 V, IF = 10 mA, TA = 25°C
CTRce(sat) VCE = 0.4 V
NCTR(SAT)
NCTR
TA = 85°C
6050403020100
0
5
10
15
20
25
30
35
50°C
70°C
85°C
IF - LED Current - mA
Ice - Collector Current - mA
25°C
-20 0 20 40 60 80 100
105
104
103
102
101
100
10-1
10-2
TA - Ambient Temperature - °C
ICEO - Collector-Emitter - nA
Typical
VCE = 10 V
.1 1 10 100
0.0
0.5
1.0
1.5
25°C
50°C
70°C
IF - LED Current - mA
NCTRcb - Normalized CTRcb
Normalized to:
IF =10 mA
Vcb = 9.3
V
Ta = 25°C
100
101.1
.01
.1
1
1
0
10
0
100
0
IF - LED Current - m
A
Icb - Collector Base
Photocurrent - µA
Icb = 1.0357 *IF ^1.3631
Ta = 25°
C
1 10 100 1000
0.4
0.6
0.8
1.0
1.2
Ib - Base Current - µA
NHFE - Normalized HFE
Ib = 20µA
Vce = 10 V
Ta = 25°C
-20°
C
25°
C
50°
C
70°
C
Normalized to:
1 10 100 1000
1.5
1.0
0.5
0.0
IB - Base Current - (µA)
NHFE(sat) - Normalized
Saturated HFE
-20°C
50°C
70°C
VCE = 0.4 V
Normalized to:
VCE = 10 V
IB = 20 µA
TA = 25°C
25°C
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA IL/ILD/ILQ74
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178 4 March 1, 2000-00
Figure 13. Propagation delay versus collector load resistor Figure 14. Propagation delay versus collector load resistor
100101.1
1
10
100
1000
1.0
1.5
2.0
2.5
RL - Collector Load Resistor - KΩ
tpLH - Propagation Delay - µs
tpHL - Propagation Delay - µs
tpLH
tpH
L
Ta = 25°C, IF = 10m
Vcc = 5 V, Vth = 1.5
V
10
0
1
0
1.1
1
1
0
10
0
100
0
1.0
1.5
2.0
2.5
RL - Collector Load Resistor - KΩ
tpLH - Propagation Delay - µs
tpHL - Propagation Delay - µs
tpLH
tpH
L
Ta = 25°C, IF = 10m
Vcc = 5 V, Vth = 1.5
V