EAAMOSPEC HIGH VOLTAGE NPN SILICON NPN POWER TRANSISTORS TIP51 ... designed for line operated audio output amplifier, and switching TIP52 power supply drivers applications. TIP53 TIP54 FEATURES: * Collector-Emitter Sustaining Voltage -250-400V(Min) *3A Rated Collector Current 3.0 AMPER * f,= 2.5MHz(Min) @I, = 200mA POWER TRANSISTORS 250 -400 VOLTS 100 WATTS MAXIMUM RATINGS Characteristic Symbol} TIPS1 | TIPS2 | TIPS3 | TIP54 | Unit Collector-Emitter Voltage Voeo 250 300 350 400 Vv Collector-Base Voltage Veao | 350 | 400 | 450 | 500 | v sf Emitter-Base Voltage Veso 5.0 Vv LF Collector Current - Continuous I 3.0 A - Peak 50 TO-247(3P) -B_. Base Current ls 0.6 A c M ~~ 7 ! aa Total Power Dissipation@T,= 25C | P, 100 Ww o ld Derate above 25C 0.8 wc r les re ( Operating and Storage Junction Ty. Ts1 c + [ | Temperature Range -65 to +150 H | N ed a P | THERMAL CHARACTERISTICS PIN 1.BASE 2.COLLECTOR Characteristic Symbol Max Unit 3-EMITTER Thermal Resistance Junction to Case} Rjc 1.25 C DIM MILLIMETERS MIN MAX A 20.63 | 2238 400 FIGURE -1 POWER DERATING B 4538 | 1620 c 190 | 2.70 a D 5.10 | 6.10 E 80 E 1481 | 15.22 = 70 F 11.72 | 12.84 2 G 4.20 | 4.50 z 6 H 182 | 246 & 50 a \ 292 | 3.23 # 40 J oso | 153 30 K 5.26 | 5.66 = 20 L 18.50 | 21.50 & M 468 | 5.36 2 9 N 240 | 280 oO 3.25 | 3.65 0 2 50 7% 100 125 150 P oss | 0.70 To , TEMPERATURE(C)TIPS1, TIPS2, TIPS3, TIPS4 NPN ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage(1) TIP51 Vegoisus) 250 Vv (l= 30 mA, I= 0) TIPS2 300 TIPS3 350 TIP54 400 Collector Cutoff Current lcEo mA (Veg 150 V, 1,= 0) TIPS1 1.0 (Veg= 200 V, I= 0) TIPS2 1.0 (Veg= 250 V, 1,= 0) TIPS3 1.0 (V.g= 300 V, |,= 0) TIP54 1.0 Collector Cutoff Current logs mA (Veg= 350 V, V,,= 0) TIPS1 1.0 (Ve,= 400 V, Vi.= 0) TIPS2 1.0 (Veg= 450 V, Va.= 9) TIPS3 1.0 (Vo,* 500 V, V.= 0) TIPS4 1.0 Emitter Cutoff Current leso mA (Vep= 5.0 V, I= 0) 1.0 ON CHARACTERISTICS (1) DC Current Gain hFE (Ig =0.3 A, Veg = 10 V) 30 150 (Ig 3.0 A, Veg = 10 V) 10 Collector-Emitter Saturation Voltage VoeE;sat) V (Ip = 3.0 A, 1, =600 mA ) 1.5 Base-Emitter On Voltage VeE;on) Vv (I, =3.0 A,Vog= 10 V) 1.5 DYNAMIC CHARACTERISTICS Current Gain - Bandwidth Product (2) f, MHz (Ig = 200 MA, Veg = 10 V, fregy = 1.0 MHZ ) 2.5 Small Signal Current Gain hy (Ig = 200 MA, Voge = 10 V, f = 1.0 kHz) 30 (1) Pulse Test: Pulse width = 300 us , Duty Cycle = 2.0% (2) fr =[hy, | tresTIP51,TIP52,TIP53,TIP54 NPN (nnn Te OS FIG-2 DC CURRENT GAIN FIG-3 BAES-EMITTER VOLTAGE Tys25C Vogs10V o e 3 z ] s < BE 5 08 & g 3 w 9 E 06 Z a < 04 Voen4.0V 2 Toa2C g > 0.01 0.02 005 | 04 0203 05 10 20 3.0 0.01 0.02 005 401 02 05 40 20 40 kc , COLLECTOR CURRENT (AMP) IC , COLLECTOR CURRENT (AMP) FIG-4 COLLECTOR-EMITTER SATURATION VOLTAGE 3.0 Tys25 C 1.0 0.5 0.2 04 & Vce, COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS) 2 8 So o = 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 40 IC , COLLECTOR CURRENT (AMP) FIG-S ACTIVE REGION SAFE OPERATING AREA There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate Ic-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. Tego __ ms The data of FIG-5 curve is base on Typig=150 C; Te is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% provided - Bonding Wire Limit Tupig $150C,At high case temperatures,thermal limitation Second Breakdown will reduce the power that can be handied to values less Thermally Limit Tex28C(Single Puss) TIP52 than the limitations imposed by second breakdown. TIPS3 TIPS4 5 10 20 50 100 200 500 VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) IC , COLLECTOR CURRENT (Amp)