1$$120 Silicon Epitaxial Planar Diode for High Speed Switching Features * Low capacitance. (C=3.0pF max) Short reverse recovery time. (trr=3.5ns max) * Small glass package (MHD) enables easy mounting and high reliability. Outline a 1 2 Cathode band Ordering Information 1. Cathode Type No. Cathode band Mark Package Code 2. Anode 1$$120 Light Blue 1 MHD Absolute Maximum Ratings (Ta = 25C) Item Symbol Value Unit Peak reverse voltage 70 Vv Reverse voltage 60 Vv Peak forward current 450 mA Non-Repetitive peak forward surge current 1 A Average forward current 150 mA Power dissipation 250 mW Junction temperature 175 C Storage temperature -65 to +175 C * Within 1s forward surge current. Electrical Characteristics (Ta = 25C) item Symbol Min Max Unit Test Condition Forward voltage Ve _ 0.8 V lp=10mA Reverse current IR _ 0.1 pA Vy = 60V Capacitance Cc 3.0 pF Va =1V,f=1MHz Reverse recovery time ty, * _ 3.5 ns lc=10mA, Va=6V, R, =50Q * Reverse recovery time test circuit Ro =502 [Pulse { Generator 3kQ Sampling in 502 Oscilloscope | Fi? =50 Trigger 105188120 Forward current te (A) 10 1.0 Capacitance C (pF) 10" 1.0 02 #04 06 O8 1.0 Forward voltage Ve (V) Fig.1 Forward current Vs. Forward voltage f=1MHz 10 Reverse voltage Ve (V) Fig.3 Capacitance Vs. Reverse voltage 1.2 102 Reverse current Ip (A) Ta=125C 20 40 60 80 =100 Reverse voltage Vp (V) Fig.2 Reverse current Vs. Reverse voltage 106