NAiS PhotoMOS GU (General Use) Type 1 Form A Series UL File No.: E57521 CSA File No.: LR26550 8 840.05 46 6.440 05 288" 002. _~ 8.4 a2 34 FEATURES 1. Controls low-level input signals PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals with- out distortion. 2. Control with low-level input signals 3. Controls various types of loads such as relays, motors, lamps and solenoids. 4. Optical coupiing for extremely high isolation Unlike mechanical relays, the PhotoMOS relay combines LED and optoelectronic device to transfer signals using light for extremely high isolation. 5. Eliminates the need for a counter AQV210 PhotoMOS RELAYS 6. Stable on resistance 7. Low-level off state leakage current 8. Eliminates the need for a power supply to drive the power MOSFET A power supply used to drive the power MOSFET is unnecessary because of the built-in optoelectronic device. This results in easy circuit design and small PC board area. 9. Low thermal electromotive force (Approx. 1 pV) TYPICAL APPLICATIONS High-speed inspection machines * Telephone equipment mm inch electromotive force protection diode e Data communication equipment in the drive circuits on the input side * Computer input devices Part No. Output rating Through hole . Packing quantity VO isolation terminat Surface-maunt terminal G voltage Tape and reel packing style Load voltage | Load current Tube packing style Picked from the] Picked from the Tube Tape and reel 1/2/3-pin side 4/5/6-pin side 60V 400 mA AQV212 AQV212A AQV212AX AQV212AZ 100 V 320 mA AQV215 AQV215A AQV215AX AQV215AZ Standard type 200 V 180 mA AQV217 AQV217A AQV217AX AQV217AZ ttube 1,500 VAC 350 V 130 mA AQV210 AQV210A AQV210AX AQV210AZ contains 400 V 120 mA AQV214 AQV214A AQV214AX AQV214AZ 50 pes. +000 ves 800 V 50 mA AQV216 AQV216A AQV216AX AQV216AZ + batch mee PCS: E type 350 V 130 mA AQV210E AQV210EA AQV210EAX AQV210EAZ contains 400 V 120 mA AQV214E AQV214EA AQV214EAX | AQV214EAZ 500 pes. Standard type Reinforced 400 V 120 mA AQV214H AQV214HA AQV214HAX AQV210EHAZ E type 5,000 V 350 V 130 mA AQV210EH | AQV210EHA | AQV210EHAX | AQV2T0EHAZ 400 V 120 mA AQV214EH AQV214EHA AQV214EHAX | AQV214EHAZ 1. Absolute maximum ratings (Ambient temperature: 25C 77F) Typeat | AQV212(A)| AQV215(A)| AQV217(A)] AQV210(A)| AQV210E(A) AQV214(A) AQV214E(A) Item Symbol | Sree AQV210EH(A) | AQVZI4H(A) | AQV214EH(A) | AOV2T6(A) Remarks LED forward current lr 50 mA LED reverse voltage Vr 3V Input | Peak forward = 100 Hz, current inp 1A Duty factor = Power dissipation Pa 75 mW Load voltage (peak AC) Vi 60V 100 V 200 V 350 V 400 V 600 V A 040A | 032A | 018A O.13A O12A OO5A A connection 0 continuous load ; B | o60a | 042A | 022A 015A 013A 006A | Peak AC. OC. ut- t C | 080A | O60A | 0.30A OA7A O.15A 008A | tenoc put A connection: Peakloadcurrent | Ipeak 1.2A | 096A | 054A | 04A o3a | 0.3A 015A fy shoy ' Ve = DC Power dissipation Pou 500 mw Total power dissipation Pr 550 mw V/O isolation voltage Viso 1,500 V AC (5,000 V AC for high 1/0 isolation voitage type) Operat o, 4 -20C to +85C | ~20C to +80C | -20C to +85C | -20C to +80C | Non-condens- heneerature ing Tope 20C to +80C -4-F to +176 F MEI 382 | @FuclGF | tf -t8sF | 48 ioctn3 = ing at low temp Storage | Taig 40C to +100C --20 Fito +212 F 19AQV210 2. Electrical characteristics (Ambient temperature: 25C 77 F) . | Type of AQV210E(A) | AQV214(A) | AQV214E(A Item Sym congee AQv212(A) | AQV215(A} | AQVZ17(A)| AQVZIOIA)| gayoroehy Ay | AQVALAMIA) | AQV2 THEN) |AQV216(A)| Condition 1on Minimum (mA) (mA) (mA) LED operate Typical Iron | tmA | 1mA | tmA | ima | 4.1016) 1 (1.3) 1.1 (1.6) tmA | = Max curren Maximum 3mA |} 3mA | 3mA | 3ma | 38 QB) 3 3 (3) 3mA LEDt fi Mirurnumn 0.4 mA | 04 mA/ 04 mA|04 mA 0.3 (0 4) 0.4 03(0 4) 04 mA Input t Typical leot | | O.79mA/ 0.79mA] 0.79MA|079MA] 1.0/1.5) 0.79 (1.2) 1041.5) | 079mA |k =Max curren Maximum (mA) (mA) (mA) Minimum eet types! | Ve | 1,14.V (1.25 V at le = 50 mA) k= 5 mA voltage Maxamum 1.5V Minimum r = pmA Typical Ron | A 0.832 | 2309 | 1100 | 239 23.2 309 302 70.2 | Within 1 sec Maximum 25 Q2 | 402 | 15 Q | 359 352 502 502 1202 Jontme : Minimum t =5mA On resistance | Typical Ron | B | 0449 | 115Q | 552 | 1150 1159 22.59 22.50 552 |haMax Maximum 1252 | 20 9 | 752 | 1752 17.60 2 9 25 2 1002 | catime Output Minimum r = ama Typeal | Ron | CG | 0.250 } 0692 | 282 | 6.02 6.00 11.30 11.3.2 282 | Winn} sec Maximum 0692 | 109 | 389 | B89 8.82 12.59 1259 502 |onume Minimum k=O Output Typcal | Con | A | 150pF | 110pF | 70pF 45 pF Vs = 0 capacitance Maximum f=1MHz Off state Minimum le=0 leakage current | "PCal ~ Vi = Max. 9 Maximum TULA Turn Minimum (msec.) | (msec.) | (msec.) | (msec.) (msec.) (msec.) (msec.) {msec.) lee mA . on Typical Ton _ 0.65 0.6 0.25 0.25 0.5 (0.7) 0 21 (0.6) 0 5(0.7) 0.28 k - Max eaten time = | Maximum 2 2 2 05 0.5 (0.7) 0.5 (0 8) 2.0 (2.0) 0.5 speed | Turn Minimum (msec.) | (msec) | (msec.) | (msec.) (msec.) (msec.) (msec.) (msec ) lee SmA Transfer off Typical =| Tor | 0.08 0.06 0.05 005 005 005 005 0.04 | Fae charac. time* = | Maximum 02 02 0.2 0.2 1.0 0.2 1.0 0.2 tenstics Minimum f=1MH VO capacitance | Typical Cisco 0.8 pF t= 1% Iz Maximum 1.5 pF \ Minimum 1,000 MQ ital eee Typical Riso _ 500 V DC onresistance | sj mum * Turn on/Turn off time { ): Value for high V/O isolation voltage type For type of connection, see p. 14 to 15. Input EY -----90% Output DIMENSIONS Max. 10 Max ee mm inch Through hole ceent Surface mount terminal type } terminal type | Tr 6.440.05 7.620 05 6.44005 76 252 = 002 306; 902 Zi22 02 239 OQ Max 10 | O [= UF LI T = + ' 1 "FER 239 6 820.05 34 | 8 os_| 346> 0C2 13: 8840 05. 34 TH \ Terminal thickness: T Terminal thickness: 3.920.2 (74 0.25 mm 010 inch 34, 0.25 mm 010 inch 1545 008 B as 25 f= PC board pattern peel oap 347 Mounting pad (Top view) x . : ; (Bottom, view) at 519 6-08 da "03" 259 125 1.28 2.54 - 03* qa < 2.54 oad {bs G49 100 a T oey 2.54 T 2542 54 100 6.4 762 100 360 252 300 General tolerance +0.1 ~ 004 L SSS sit General tolerance: +0.1 +.004 3 Tolerance: +0.1- 004 80 Tolerance: +0.1 + 004 20AQV210 DATA (1) AQV210EH type 1. Load current vs. ambient temperature characteristics Allowable ambient temperature. -20C to +85C Type of connection. A 4 Fito +185 F 2. On resistance vs. ambient temperature characteristics Measured portion. across terminals 4 and 6; LED current: 5 mA; Continuous load current. 130 mA (DC) 3. Turn on time vs. ambient temperature characteristics LED current: 5 mA, Load voltage. 350 V (DC): Continuous load current: 130 mA (DC) _ Load current, mA 100 Ambient temperature, C 6 | i L GS 50 ' a 2 s 2 40 2 Ss o 30 Le 20 ee ob 20 0 20 40 60 30 Ambient temperature, *C 12 @ 10 & 2 = oat < 5 LY e 5 = 06 | eee O4 t | -20. 0 420 40 #60 60 Ambient temperature C 4. Turn off time vs. ambient temperature characteristics LEO current: mA, Load voltage: 350 V (DC): Continuous load current 130 mA (DC) 5. LED operate current vs. ambient temperature characteristics Load voitage. 350 V (DC); Continuous load current: 130 mA (DC) 6. LED turn off current vs. ambient temperature characteristics Load voltage: 350 V (DC), Continuous toad current: 130 mA (DC) 0.5 g 04 E = 03 3 e 9.2 0.1 | OT 0 20 a 8080 Ambient temperature, C 5 44 6 @ = 2 3 = 50 mA $13 30 ma : 10-* : C-~ [C 3 : i oa | 3 ~~] 4 8 @ rE 20 Voltage, V 2 ' 11 40 6 t ~ 6 1.0 -80 10 ol -20 0 20 40 #60 BO 0 40 60 380 100 Ambient temperature, C Load voltage, V 10. LED forward current vs. turn on time 11. LED forward current vs. turn off time 12. Applied voltage vs. output capacitance characteristics characteristics characteristics , Measured portion: across terminals 4 and 6; Measured portion. acrass terminals 4 and 6; Load Measured portion: across terminals 4 and 6, Load voitage: 400 V (OC); Continuous load current: voitage: 400 V (DC); Continuous load current: 120 Frequency: 1 MHz; Ambient temperature: 25C 77F 120 mA (DC); Ambient temperature: 25C 77F mA (DC); Ambient temperature. 25C 77F 2.0 010 ua . a 3 B 0.08 a 15 2 2 g 0.06 a = =~ aq 7 = uo 5 0 2 pa i = = 908s a A 05 \ | 002 | | ___ | | (G00 88 50 7020304050 LED forward current, mA LED forward current, mA Applied voltage, VAQV210 13. On resistance distribution Measured portion: across terminals 4 and 6, Continuaus foad current: 130 mA (DC), Quantity, n = 50; Ambient temperature. 25C 77 F 14. Turn on time distribution Load voltage: 350 V (DC); Continuous load current. 130 mA (DC). Quantity, n = 50, Ambient tempera- ture 25C 77 F 15. Turn off time distribution Load voltage: 350 V (DC), Continuous load current: 130 mA (DC); Quantity, n = 50, Ambrent tempera- ture. 25C 77 & ; 30 r 30 30 rn | ~ 25 25 25 > 20 > 20 > 20 a 15 a 18 6 15 19 10 ro | 10 1 5. 5 . 5 OMe 20 BF 24 2828 OSS OE OF OF OF TO 71 O'*o26 034 O42 050 058 066 O74 On resistance, Q > Turn on time, msec Turn off ime, msec 16. LED operate current distribution 17. LEO turn off current distribution 18. LED dropout voltage distribution Load voltage: 350 V (DC); Continuous load current: Load voltage. 350 V (DC), Continuous toad current. LEO current: 50 mA, Quantity, n = 50; Ambient 130 mA (DC}, Quantity, n = 50, Ambient tempera- 130 mA (DC), Quantity, n = 50. Ambient tempera- temperature: 25C 77F ture 25C 77 F ture 25C 77 F 30 | 30 30 25 25 25 = L 2 20 > 20 > 20 5 2 = 6 15 a 1 8 15 10) 10 10) = $ 5 5 OL4y. : : olay L Os 70 72 14 16 18 20 23 10 1.2 74 16 18 20 23 1.18120 122 124 7 26 1.28 130 LEO operate current, mA LED turn oft current, mA LED dropaut voltage, V - 19.-(1) Bias test at high temperature and high 19.-(2) Bias test at high temperature and high 20.-(1) Low temperature storage test humidity (change of turn on time) humidity (change of on resistance) (change of turn on time) Quantity, n = 10; Ambient temperature: 85C 185F Quantity, n = 10; Ambient temperature: 85C 185F Quantty, n = 10; Ambient temperature: 40C - 40F Humidity: 85%; Vi. = 350 Vx0.8 Humidity: 85%; V_ = 350 Vx08 a a 5S E 3 = = Cc < e 3 = | i 1 10 1 10 1 103 Test tme, h Test time, h Test time. h 20.-(2) Low temperature storage test 21.-(1) High temperature storage test 21.-(2} High temperature storage test (change of on resistance) (change of turn on time) (change of on resistance) Quantity, n = 10; Ambient temperature: -40C -40 F = Quantity, n = 10; Ambient temperature 100C 212 F Quantity, a = 10, Ambient temperature: 100C 212 F c 3 c 3 E a g 3 g a 3 3 ~ 3 0 3 i s s LY 3 3 ; 0 | 1 Test time, h Test time, h Test ume, h 23 REE Te LRN CIR me aan ee, eeAQV210 13. On resistance distribution Measured portion: across terminais 4 and 6, Continuous Joad current: 120 mA (DC), Quantity, n = 50; Ambient temperature: 25C 77 F nanan s fase tee wee 14. Turn on time distribution Load voitage 400 V (DC), Continuous load current. 120 mA (DC): Quantity, n = 50; Ambient tempera- ture 25C 77 F 15. Turn off time distribution Load voltage: 400 V (DC), Continuous load current. 120 mA (DC), Quantity, n = 50; Ambient tempera- ture: 25C 77F 30, > 20 = a 6 15 10] 5 Orga 2a 8 28 303234 _-~ On resistance, Q 30) 25 z> 2 5 = o 15 i 4 : 19 mn . = Otis 2 36 30 34 3842 Turn on time, msec. 30 25 > 20 = nm = 6 15 10 5 Ogg 03a 043 050 058 066 O74 Turn off time, msec 16. LED operate current distribution Load voltage: 400 V (DC); Continuous load current. 120 mA (DC); Quantity, n = 50; Ambient tempera- ture. 25C 77 F 17. LED turn off current distribution Load voltage. 400 V (DC); Continuous load current: 120 mA (DG), Quantity, n = 50, Ambient tempera- ture: 25C 77F 18. LED dropout voltage distribution LEO current: 50 mA, Quantity, n = 50, Ambient temperature. 25C 77F 30 25 45 otis 7 1113 15 47 LED operate current, mA 30 2 | 20 2 5 6 15) 10] ls oly cit t TI 87 $9 1114139 15 17 LED turn off current, mA 30 25 > 20 = a = 4 a 15 4 10 5 . OTE 7 20 122 1.24 126 138 190 LED dropout voltage, V 19.-(1}) Bias test at high temperature and high humidity (change of turn on time) Quantity, n = 10; Ambient temperature: 85C 195F Humidity. 85%, V_ = 400 Vx0.8 19.-(2) Bias test at high temperature and high humidity (change of on resistance) Quantity, n = 10; Ambient temperature: 85C 185F Humidity: 85%: VL = 400 Vx0.8 20.-(1) Low temperature storage test (change of turn on time) Quantity, n = 10; Ambient temperature: -40C 40F o a o Turn on time, msec. Qo nm o Test time, h > On resistance, 0 3 a 1 10 107 Test time, = Turn on time, msec 1 1 1 Test time, h 20.-(2) Low temperature storage test (change of on resistance) Quantity, n = 10; Ambient temperature. ~40C 40F 21.-(1) High temperature storage test (change of turn on time) Quantity, n = 10; Ambient temperature. 100C 212 F 21.-(2) High temperature storage test (change of on resistance) Quantity, n = 10; Ambient temperature: 100C 212-F a 8 c oO & o a = a 3 5 & e 1 9? { ! , O14 0 | Test time, h Test time, h Test time, h 24cy NOTES 1. Shert across terminals Do not short circuit between terminals when relay is energized, since there is possibility of breaking of the internal IC, 2. Surge voltages at the input if reverse surge voltages are present at the input terminals, connect a diode in reverse parallel across the input termi- nals and keep the reverse voltages be- low the reverse breakdown voltage. oO 1 6 5; i, 5 oH |Ao 3. Ripple in the input power supply lf ripple is present in the input power supply, observe the following: 1) For LED operate current at Emin, maintain as follows: AQV210(E)(A) types: Min. 5 mA 2) Keep the LED operate current at 50 mA or less at Emax. Emin Emax 4. Output spike voltages 1) If an inductive load generates spike voltages which exceed the absolute maximum rating, the spike voltages must be limited. Typical circuits are shown below. oHo @ 2 3, 1 Load | 7 Add a clamp diode 8 ta the load Add a CR snubber circuit to the load 2) Even if spike voltages generated at the load are limited with a clamp diode by inductance if the circuit wires are long, spike voltages will be occured. Keep wires as short as possible to minimize inductance. 5. The following shows the packag- ing format (1) Tube Devices are packaged in a tube so pin No. 1 is on the stopper B side. Observe correct orientation when mounting them on PC boards. S7 SSS Stopper 8 (2) Tape and reel mm inch AQV210 (2) Vapor phase soldering method : = 7 \ ~ lI, b T, = 180C ta 200C 356 F to 392 F T,=218C 419F or less t, =40 sec. t, = 90 sec. of less (3) Double wave soldering method Tape dimensions Tractor feed holes Direction of picking 0.42005 1 Sia dia. 10.1401 aoe c ath tee 175401 O16. 342 059 dia $00- is 949" 004 7 yt 7 540.1 Device i Ved5 ~"G04 mounted - +03 | _ On tape 4 he 118.9203, 120401 _~ 9 2+0.1 45203 472-004" 30401 , 3020.1 3622 904 Vie? O79~ 064 1.6+0 1 da 2832 004 dia @ When picked from 1/2/3-pin side: Part No. AQV21O(E)AX @ When picked from 4/5/6-pin side: Part No. AQV21O(E)AZ Dimensions of paper tape reel 6. Soldering 1) When soldering PC board terminals, keep soldering time to within 10 sec. at 260C 500F. 2) When soldering surface-mount termi- nals, the following conditions are recom- mended. (1) IR (Infrared reflow) soldering method u bo T, = 155C to 165C 311F to 329F T, = 180C to 200C 356'F to 392F T, = 245C 473 F or less t, = 120 sec. or less t,=30 sec. or less Tt ZAh t beth T, = 155C to 165C 313F io 329F tt, = 60 sec. or less T, = 260C 500F or less (4) Soldering iron method Tip temperature: 280C to 300C 536F to 572F Wattage: 30 to 60 W Soldering time: within 5 sec. (5) Others Check mounting conditions before using other soldering methods (hot-air, hot plate, pulse heater, etc.). e The temperature profile indicates the temperature of the soldered terminal on the surface of the PC board. The ambient temperature may increase ex- cessively. Check the temperature under mounting conditions. e The conditions for the Infrared reflow soldering apply when preheating using the VPS method. &+t,=5 sec or less 25 en nee eee Poe