NSVMMBTA05LT1G - ON SEMICONDUCTOR

October, 2016 − Rev. 10 1Publication Order Number:

MMBTA05LT1/D

MMBTA05L, MMBTA06L

Driver Transistors

NPN Silicon

Features

•S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

MMBTA05L

MMBTA06L

VCEO 60

Vdc

Collector−Base Voltage MMBTA05L

MMBTA06L

VCBO 60

Vdc

Emitter−Base Voltage VEBO 4.0 Vdc

Collector Current − Continuous IC500 mAdc

Electrostatic Discharge ESD HBM Class 3B

MM Class C

CDM Class IV

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5

Board (Note 1) TA = 25°C

Derate above 25°C

PD225

1.8

mW/°C

Thermal Resistance,

Junction−to−Ambient RqJA 556 °C/W

Total Device Dissipation Alumina

Substrate, (Note 2) TA = 25°C

Derate above 25°C

PD300

2.4

mW/°C

Thermal Resistance,

Junction−to−Ambient RqJA 417 °C/W

Junction and Storage Temperature TJ, Tstg −55 to +150 °C

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

SOT−23

CASE 318

STYLE 6

MARKING DIAGRAMS

1H M G

MMBTA05LT1

COLLECTOR

BASE

EMITTER

1GM M G

MMBTA06LT1,

SMMBTA06L

1H, 1GM = Specific Device Code

M = Date Code*

G= Pb−Free Package

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

www.onsemi.com

MMBTA05L, MMBTA06L

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 3)

(IC = 1.0 mAdc, IB = 0) MMBTA05L

MMBTA06L

V(BR)CEO 60

80 −

−

Vdc

Emitter−Base Breakdown Voltage

(IE = 100 mAdc, IC = 0) V(BR)EBO 4.0 − Vdc

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0) ICES − 0.1 mAdc

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0) MMBTA05L

(VCB = 80 Vdc, IE = 0) MMBTA06L

ICBO −

−0.1

0.1

mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 100 mAdc, VCE = 1.0 Vdc)

hFE 100

100 −

−

Collector−Emitter Saturation Voltage

(IC = 100 mAdc, IB = 10 mAdc) VCE(sat) − 0.25 Vdc

Base−Emitter On Voltage

(IC = 100 mAdc, VCE = 1.0 Vdc) VBE(on) − 1.2 Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 4)

(IC = 10 mA, VCE = 2.0 V, f = 100 MHz) fT100 − MHz

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

4. fT is defined as the frequency at which |hfe| extrapolates to unity.

Figure 1. Switching Time Test Circuits

OUTPUT

TURN-ON TIME

-1.0 V VCC

+40 V

* CS t 6.0 pF

100

Vin

5.0 mF

tr = 3.0 ns

+10 V

5.0 ms

OUTPUT

TURN-OFF TIME

+VBB VCC

+40 V

* CS t 6.0 pF

100

Vin

5.0 mF

tr = 3.0 ns

5.0 ms

*Total Shunt Capacitance of Test Jig and Connectors

For PNP Test Circuits, Reverse All Voltage Polarities

MMBTA05L, MMBTA06L

www.onsemi.com

Figure 2. Current Gain Bandwidth Product vs.

Collector Current Figure 3. Capacitance

Figure 4. Switching Time

IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (V)

VCE = 2.0 V

TA = 25°C

Cibo

Cobo

2010

IC, COLLECTOR CURRENT (mA)

200

100

10 100

t, TIME (ns)

50 200 500

1.0 k

500

VCC = 40 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

5.0 7.0

300

700

30 70

td @ VBE(off) = 0.5 V

C, CAPACITANCE (pF)

300

Figure 5. DC Current Gain vs. Collector

Current

IC, COLLECTOR CURRENT (mA)

TA = 150°CVCE = 1.0 V

ftau, CURRENT GAIN BANDWIDTH

PRODUCT (MHz)

1000

100

101 10 100 1000 0.1 1 10 100

100

TA = 25°C

TA = −55°C

hfe, DC CURRENT GAIN

0.1 1 10 100

1000

100

Figure 6. Collector Emitter Saturation Voltage

vs. Collector Current Figure 7. Base Emitter Saturation Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

0.01

0.1

10.1

0.2

0.3

0.4

0.6

0.7

0.8

1.0

1.1

VCE(sat), COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

VBE(sat), BASE−EMITTER

SATURATION VOLTAGE (V)

IC/IB = 10

0.5

0.9

IC/IB = 10

TA = 150°C

TA = 25°C

TA = −55°C

1.2

10 100 1000

TA = 150°C

TA = 25°C

TA = −55°C

10.1 10 100 1000

MMBTA05L, MMBTA06L

www.onsemi.com

Figure 8. Base Emitter Turn−ON Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (mA)

1.1

VBE(on), BASE−EMITTER VOLTAGE (V)

VCE = 1 V

Figure 9. Saturation Region

IB, BASE CURRENT (mA)

TA = 25°C

IC =

100 mA

IC =

50 mA IC =

250 mA IC =

500 mA

IC =

10 mA

Figure 10. Base−Emitter Temperature

Coefficient

100 5000.5

IC, COLLECTOR CURRENT (mA)

−0.8

−1.2

−1.6

−2.0

−2.4

−2.8 10

RqVB for VBE

1.0 2.0 5.0 20 50 200

Figure 11. Safe Operating Area

VCE, COLLECTOR EMITTER VOLTAGE (V)

1001010.1

10000

IC, COLLECTOR CURRENT (mA)

Thermal Limit

100 ms

1 s

10 ms

1 ms

TA = 150°C

TA = 25°C

TA = −55°C

10.1 10 100 1000

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1 10.1 10 1000.01

1.0

0.8

0.6

0.4

0.2

VCE(sat), COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

RqVB, TEMPERATURE COEFFICIENT (mV/°C)

Single Pulse at TA = 25°C

MMBTA06L

Figure 12. Safe Operating Area

VCE, COLLECTOR EMITTER VOLTAGE (V)

1001010.1

10000

IC, COLLECTOR CURRENT (mA)

1000

100

1000

100

Thermal Limit

100 ms

1 s

10 ms

1 ms

Single Pulse at TA = 25°C

MMBTA05L

MMBTA05L, MMBTA06L

www.onsemi.com

ORDERING INFORMATION

Device Package Shipping†

MMBTA05LT1G SOT−23

(Pb−Free) 3,000 / Tape & Reel

NSVMMBTA05LT1G* SOT−23

(Pb−Free) 3,000 / Tape & Reel

MMBTA05LT3G SOT−23

(Pb−Free) 10,000 / Tape & Reel

MMBTA06LT1G SOT−23

(Pb−Free) 3,000 / Tape & Reel

SMMBTA06LT1G* SOT−23

(Pb−Free) 3,000 / Tape & Reel

MMBTA06LT3G SOT−23

(Pb−Free) 10,000 / Tape & Reel

SMMBTA06LT3G* SOT−23

(Pb−Free) 10,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable.

MMBTA05L, MMBTA06L

www.onsemi.com

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.

MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF

THE BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

SOLDERING FOOTPRINT*

VIEW C

0.25

SEE VIEW C

DIM

AMIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.000

b0.37 0.44 0.50 0.015

c0.08 0.14 0.20 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.30 0.43 0.55 0.012

0.039 0.044

0.002 0.004

0.017 0.020

0.006 0.008

0.114 0.120

0.051 0.055

0.075 0.080

0.017 0.022

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

HE0.35 0.54 0.69 0.014 0.021 0.027

c0 −−− 10 0 −−− 10

T°°°°

TOP VIEW

SIDE VIEW END VIEW

2.90

0.80

DIMENSIONS: MILLIMETERS

0.90

PITCH

3X 0.95

RECOMMENDED

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

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UBLICATION ORDERING INFORMATION

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Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

MMBTA05LT1/D

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