TOSHIBA 2SD1410A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD1410A IGNITER APPLICATIONS Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS 2.740.2 High DC Current Gain : hye = 2000 (Min.) (VoR = 2V, Ig = 2A) MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL | RATING UNIT 0754015 Collector-Base Voltage VcCBO 300 V . ; d Collector-Emitter Voltage VCEO 250 Vv ~ Emitter-Base Voltage VEBO 5 Vv 5 123) s|_on Collector Current Ic 6 A an t |S Base Current Ip 1 A Collector Power Ta = 25C Po 2.0 Ww 1. BASE * et . _ 9, _ Fy 2. COLLECTOR Dissipation (Te = 25C) | Te = 25C 25 3. EMITTER Junction Temperature Tj 150 C Storage Temperature Range Tstg 55~150 C JEDEC _ JEITA EQUIVALENT CIRCUIT TOSHIBA _2-10R1A COLLECTOR Weight : 1.7g (Typ.) EMITTER 1 2001-11-05TOSHIBA 2SD1410A ELECTRICAL CHARACTERISTICS (Tc = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector Cut-off Current IcBo Vcsp = 300 V, IR = 0 0.5 | mA Emitter Cut-off Current IRBO VEB = 5V, Ic =0 0.5 | mA Vitae Breakdown V (BR) CEO [Ic = 0.5 A, L = 40 mH 250 _ _ Vv DC Current Gain = > To = = c : = Spa = = Wl Saturation VE (sat) [IC = 44, Ip = 0.04 A _ _ 2.0 Vv vole Saturation VBE (sat) [Ic = 4A, Ip = 0.04 A _ _ 25} Vv Collector Output Capacitance | Coh 7 cB ME, V, Ig = 9, 30 | pF Turn-on Time ton IN- OUTPUT) _ 1 Switching Storage Time tstg _ 8] us : Ipi = Ipg = 0.04 A, Voc Fall T _ _ an ame f DUTY CYCLE <1% =100V 5 2 2001-11-05TOSHIBA 2SD1410A Ic VcE hFE - Ic 10000 COMMON ~ EMITTER s Te = 25C 5000 <- 2 5 3000 B g : & S 5 & 1000 o ico me [anf = = 500 R oS Q | 2 300 8 COMMON EMITTER Von =2V 100 0 1 2 3 4 5 6 T 8 0.03 0.1 0.3 1 3 10 COLLECTOR-EMITTER VOLTAGE Vog (V) COLLECTOR CURRENT Ic (A) VCE (sat) Ic SAFE OPERATING AREA 20 Zz, COMMON EMITTER 2 MAX. (PULSED) 3% 5 Ic /Ip = 100 10 { ) S BS Ig MAX.|7 45 ae 5t (CONTI ist a NuUO ES 3 e > Za Te = 55C 3 Reo ~ Se 2 Ra 1 aS E 3 25 a DC OPERATION fom _ ; 8 100 @ 05 (Te = 25C) 1} . oO 0.05 0.1 0.3 1 3 10 ge 03 Be COLLECTOR CURRENT Ic (A) 2 3 VR (eat) Tn Y br (at) + Cc = COMMON EMITTER Ig/Ip = 100 0.05 % SINGLE NONREPETITIVE 0.03 PULSE Te = 25C CURVES MUST BE DERATED LINEARY WITH INCREASE IN TEMPERATURE. VcEo MAX. 3 10 30 100 300 0.01 COLLECTOR-EMITTER VOLTAGE Vcr CV) BASE-EMITTER SATURATION VOLTAGE VpgE (sat) (V) 0.05 0.1 0.3 1 3 10 COLLECTOR CURRENT Ig (A) 3 2001-11-05TOSHIBA 2SD1410A RESTRICTIONS ON PRODUCT USE 000707EAA @ TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. @ The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 4 2001-11-05