PHILIPS INTERNATIONAL Philips Semiconductors __Datashoot Preliminary specification December 1990 QUICK REFERENCE DATA N2646 ilicon unijunction transistor 2 S svwso [ _PARAWETER | coworTons [wm [ W@[ waxe[ or Vee __[erilterbase2votage | Tex Jemiterourent______ | peakvae |=] = ]2 Ta Pu [otal power dissipation] | 800 7 [hunetion tomperature | tas ho ee le = emitter-base 1 saturation voltage Vion, = 10 V 7 PP |. = 50 mA Tey [eniter vay pointourrent} Jaa ey emiter peak point ourent | |= a PINNING - TO-18 PIN CONFIGURATION Base 2 connected to case. DESCRIPTION emitter base 1 base 2 Fig.1 Simplified outline and symbol. 733Philips Semiconductors Preliminary specification on transistor a ee Ee gaia: Silicon unijuncti 2N2646 _ SE Ss Se _- ee a ll LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). evo [PARAMETER | GONDMONS [MIN | MAX. | UNIT Vez [emiterbase2 voltage Ss