b3E D MM 799707b OOle4ee Ted MBTSAJ SANYO Small-signal FETs Case Outlines (unit:mm) Features *Very low noise figure *Large {Yfsi| *Low gate leak current SANYO: SMCP * Small-sized package permitting FET-used sets to be made smaller 1. Gate, 2. Source, 3. Drain. se LF Amp, Low Noise, Analog Switch, Impedance Conversion Applications te at 1 yah | io * sign (PCP Package) Mounted on ceramic board (250mmXO. 8mm) 2 shee Absolute Maximum Electrical Characteristics/Ta=25C Dod t t N Pack Ratings/Ta=25T kK1.6aleo ype 0. ackage = #VGDO I P. | iy, t | . c l ves | > | PT ifs | ebBS | tg8S | bs dss Goon ( ):Marking (Vv) (mA) | (mW)} (mS) | (PF) | (PF) | () (mA) 2k] 2SK2170(B7~B9) SMCP -30 20( 100 5 5 0.9 10 | 0.6 ~6.0 SANYO: lic ource, 3. Drain, 25K1068(B) =40 1| 100] 0.13. | 1.7 0.7 | 10 | 0.03 ~0.3 zeuiles i ee. 25K1069, 28K1332 28K1069(F]) cP 740 20 150 9 9 2.1 10 1.2 ~ 12/2 R137, ask 2081. te 3D 28K1332(V -3 o} 1 5 5 : 10 6 ~ 6 e,2.Gate,3.Drain. 4 28K1375(C) + -20 1} 100] 1.2 | 3.8 | 0.85) 8 | 0:14 ~o,$|2SK1065. 28ki1067, 2skiase, 248 J 2SK2091(H) -30 5] 150] 1.8 2.9 1.1 10 10.4 ~1.1 A E 1 a 2$K303(V) -30 20| 200 6 5 1.5 10 [0.6 ~ 12 ; a 2SK545(B) cP -401 1G 10/ 100 - 1.7 0.7 10 | 0.03 ~0.3 2 a" 1 2SK771(FJ) -40 20] 200 3 9 2.1 10 [1.2 ~ 12 o = 2SK2076(H) -30 5] 150} 1.6 2.9 11 10 | 0.4 ~1.1 1a fo 2.9 2SK2171(KM)| PCP -40 100] #800] 15 11 2.5 10 40 ~ 75 2SK332 DP6A, B -40 20} 200] 17 13 3 10 Pulse ret ala 2SK333 DP6A, B -80 20{ 200} 15 11 2 30 | 1.2 ~ 12 vie 2SK377 DP3 # -20) 1G 10] 100 - - - 5 | 0.06 ~0.8 2SK597 DP3 # -20 1{ 100] 1.2 3.5 0.65 5 | 0.06 ~0.8 1, so ANYO: EF ai 3. Cat 2SK1806 DP3 -30 20] 250 5 5 1.5 10 | 0.6 ~ 6) ogKnge Sere rain 3- eK B40. 28K304 -30 20| 150 6 5 1.5 i0 | 0.6 ~ 12| 1-Source,2, Cate, 3. Drain, 28K546 SPA -40| 1G 10] 100] 0. 13 1.9 0.7 10 | 0.03 ~0.3) 1. Gi 2SK968 Source 28K596 * -20 1) 100] 1. 3.5 0. 5 10.1 ~0.8 . urce. 28K1131 *-20 1] 100] 1.2 3.5 0.65 5 | 0.15 ~0.8] 38k2073. 282076. ' 2SK1578 *-20 1] 100] 1.2 4.1 0. 88 5 0.1 ~0.8 1. Drain, 2. Source, 3. Gate. 2SK1847, 25K1848, 2SK1849, 28K222 NP -40] IG 10| 300 17 14 3.5 10 11.2 ~ 12 25K223 -80| IG 10] 400| 20 12 25 | 30 | 1.2 ~ 24) 29/284 25J285,25)286. : at 4; HF Amp Applications 1 Hoos 3 244] 2SK1065(T) MCP x -20 20) 150 6 4 0.04 5 | 12 ~ 12 5 4] ie hoa 28K242(T=) * -20 20) 150 6 4 0.04 5 | 0.6 ~ 29 beot.t 28K931(D) cP -30 50| 200] 30 7 2 5 |5 ~ 2SK968 (GJ) * ~20 20] 200 6 4 0.04 5 | 06 ~ r 28K1740(1J) -40 75| 250] 15 11 2.5 10 | 40 ~ [| } 28K1747 DP6A, B -40 75| 250] 15 il 2.5 10 | 40 ~ 2SK212 SPA * =-20 20/ 200 6 4 0. 04 5 |0.6 ~ 28K315 * -20 25| 200] 12 8 0.08 5 | 25 ~ 28K937 NP -40 100] 300] 15 11 2.5 10 | 40 ~ High gm, Wide-Band Amp Applications 28K1066(A) MCP -15 20/ 150 17 7 2.0 5 13.5 ~ 25K436(A) -15 20/ 150 17 7 2.0 5 11.2 ~ 25K443(AJ) CP -15 50| 200 30 9 2.8 5 1/5 ~ 2SK932(E) 15 50) 200 50 10 3 5 15 ~ 28K2073(VJ) -15 50| 200 30 | 9.5 2.7 5 16 ~ 20 25K404 -20 20| 200 10 7 1.8 5 11.2 ~ 12 a, 2SK427 SPA -15 20] 200 17 7 2.0 5 | 1.2 ~ 12 f 4.0 f 2sk4ed -15 50| 200 30 9 2.8 5 |5 ~ 38 28K715 ~15 50| 300 50 10 3.0 5 |5 ~ 24 : 28K2074 -15 50| 300 30 | 9.5 2.7 5 16 ~ 20 _ SANYO: DP6A 1, Drain, 2. Gate, 3. Source. 28K445 NP -15 50| 300 30 g 2.8 5 | 5.0 ~ 38 25K1961 15 100| 500 32] 5.5 | 1.6 5 40 ~ 75 Tamir SANYO: SPA Lp 2G SANYO NP SANYO: DP6B 1f 7 P13 - 1. Gate, 2. .3. Drain. rain, 2. Gate ource. 20 5.0 E= zsk212, 28K315, 25K544, 2SK669, 25K222, 25K223, 2SK937, 2SK1961 fuss] CY 25K 1g4i, 1. Gate, 2. Source, 1. Drain. a on, boetas S8eeRs --& ae wd 2sK304. 2akdOd DekaaT ooktaA, ne om 8 Tay ne 2SK546, 2SK596, 2SK715, 2SK772, ' 3 als ; 2SK1131, ekg, kets 28K2074. a2 . TAA) ane |! fr off an Prima so ale: ae tt 2 30 40 0 Po) 3 2M 2s These specifications are subject to change without notice. MOS, MES FETs Continued on next Page SANYO Electric Co.,Ltd. Semiconductor Business Headquarters, TR Division. MT930706TR 47 SANYO SEMICONDUCTOR CORP