1
Item Symbol Rating Unit
Drain-source voltage V DS 500
Continuous drain current ID10
Pulsed drain current ID(puls] 40
Continuous reverse drain current IDR 10
Gate-source peak voltage VGS ±20
Max. power dissipation PD80
Operating and storage Tch +150
temperature range Tstg
2SK2052-R FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
Maximum ratings and characteristics
Absolute maximum ratings ( Tc=25°C unless otherwise specified)
V
A
A
A
V
W
°C
°C
-55 to +150
Outline Drawings
F-V SERIES
Features
Include fast recovery diode
High voltage
Low driving power
Applications
Motor controllers
Inverters
Choppers
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermal characteristics
Item Symbol Test Conditions
Zero gate voltage drain current IDSS
Min. Typ. Max. Units
V
V
µA
mA
nA
Ω
S
pF
ns
V
ns
µC
Min. Typ. Max. Units
Thermal resistance Rth(ch-a) channel to ambient
Rth(ch-c) channel to case 30
1.56 °C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
trr
Qrr
Item
Drain-source breakdown voltage
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
(ton=td(on)+tr)
Turn-off time toff
(toff=td(off)+tf)
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=1mA VGS=0V
ID=10mA VDS=VGS
VDS=500V V GS=0V Tch=25°C
Tch=125°C
VGS=±20V VDS=0V
ID=5A VGS=10V
ID=5A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V RG=25 Ω
ID=10A
VGS=10V
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-di/dt=100A/µs Tch=25°C
500
2.1 3.0 4.0
10 500
0.5 2.0
10 100
0.80 1.10
4.0 8.0
1100 1600
140 210
75 110
25 40
60 90
200 300
90 140
0.95 1.80
150 200
0.75
Gate(G)
Source(S)
Drain(D)
1. Gate
2. Drain
3. Source
20 Min
15.5
5.5
9.3
5.45 5.45
5.5
3.2
21.5
1.6
3.5
1.1
2.1
2.3
0.6
±0.2
±0.2
±0.3
±0.3
±0.3
±0.3
±0.2 ±0.2 ±0.2
±0.3
±0.3
+0.2
+0.3
+0.2
—0.1
±0.2
ø3.2
JEDEC
EIAJ
TO-3PF
廃型機種
Discontinued product.
2
Characteristics
2SK2052-R
FUJI POWER MOSFET
Typical output characteristics
VDS [ V ]
ID
[ A ]
On state resistance vs. Tch
RDS(on)
[ Ω ]
Tch [ °C ]
Typical transfer characteristics
VGS [ V ]
ID
[ A ]
Typical Drain-Source on state resistance vs. ID
ID [ A ]
RDS(on)
[ Ω ]
Typical forward transconductance vs. ID
ID [ A ]
gfs
[ S ]
Gate threshold voltage vs. Tch
Tch [ °C ]
VGS(th)
[ V ]
-50 0 50 100 150
-50 0 50 100 150
25
20
15
10
5
0 0 10 20 30
0 2 4 6 0 10 20
0 5 10 15 20 25
3.0
2.0
1.0
0
15
10
5
0
6.0
4.0
2.0
0
25
20
15
10
5
0
3.0
2.0
1.0
0
廃型機種
Discontinued product.
3
FUJI POWER MOSFET
Typical capacitance vs. VDS
VDS [ V ]
C
[nF]
Forward characteristics of reverse diode
VSD [ V ]
IF
[ A ]
Allowable power dissipation vs. Tc
Tc [ °C ]
PD
[ W ]
Transient thermal impedance
t [ sec. ]
Rth
[°C/W]
Safe operating area
ID
[ A ]
VDS [ V ]
Typical input charge
VDS
[ V ]
Qg [ nC ]
VGS
[ V ]
0 0.5 1.0 1.5 0 50 100 150
102
101
100
10-1
10-5 10-4 10-3 10-2 10-1 100 101
101
100
10-1
10-2 0 50 100 150
100 101 102 103
2SK2052-R
0 10 20 30 40
500
400
300
200
100
0
100
80
60
40
20
0
100
10-1
10-2
102
101
100
10-1
20
15
10
5
0
廃型機種
Discontinued product.
