Silizium-PIN-Fotodiode; in SMT und als Reverse Gullwing Silicon PIN Photodiode; in SMT and as Reverse Gullwing BPW 34, BPW 34 S, BPW 34 S (E9087) BPW 34 BPW 34 S BPW 34 S (E9087) Wesentliche Merkmale * Speziell geeignet fur Anwendungen im Bereich von 400 nm bis 1100 nm * Kurze Schaltzeit (typ. 20 ns) * DIL-Plastikbauform mit hoher Packungsdichte * BPW 34 S/(E9087): geeignet fur Vapor-Phase Loten und IR-Reflow Loten (JEDEC level 4) Features * Especially suitable for applications from 400 nm to 1100 nm * Short switching time (typ. 20 ns) * DIL plastic package with high packing density * BPW 34 S/(E9087): suitable for vapor-phase and IR-reflow soldering (JEDEC level 4) Anwendungen * Lichtschranken fur Gleich- und Wechsellichtbetrieb * IR-Fernsteuerungen * Industrieelektronik * Messen/Steuern/Regeln" Applications * Photointerrupters * IR remote controls * Industrial electronics * For control and drive circuits Typ Type Bestellnummer Ordering Code BPW 34 Q62702-P73 BPW 34 S Q62702-P1602 BPW 34 S (E9087) Q62702-P1790 2000-01-01 1 BPW 34, BPW 34 S, BPW 34 S (E9087) Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ... + 85 C Sperrspannung Reverse voltage VR 32 V Verlustleistung, TA = 25 C Total power dissipation Ptot 150 mW Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Fotoempfindlichkeit, VR = 5 V Spectral sensitivity S 80 ( 50) nA/Ix Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity S max 850 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax 400 ... 1100 nm Bestrahlungsempfindliche Flache Radiant sensitive area A 7.00 mm2 Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area LxB 2.65 x 2.65 mm x mm Halbwinkel Half angle 60 Grad deg. Dunkelstrom, VR = 10 V Dark current IR 2 ( 30) nA Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity S 0.62 A/W Quantenausbeute, = 850 nm Quantum yield 0.90 Electrons Photon Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage VO 365 ( 300) mV 2000-01-01 LxW 2 BPW 34, BPW 34 S, BPW 34 S (E9087) Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) (cont'd) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Kurzschlustrom, Ev = 1000 Ix Short-circuit current ISC 80 A Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 ; VR = 5 V; = 850 nm; Ip = 800 A tr, tf 20 ns Durchlaspannung, IF = 100 mA, E = 0 Forward voltage VF 1.3 V Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance C0 72 pF Temperaturkoeffizient von VO Temperature coefficient of VO TCV - 2.6 mV/K Temperaturkoeffizient von ISC Temperature coefficient of ISC TCI 0.18 %/K Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V, = 850 nm NEP 4.1 x 10- 14 Nachweisgrenze, VR = 10 V, = 850 nm Detection limit D* 6.6 x 1012 2000-01-01 3 W -----------Hz cm x Hz -------------------------W BPW 34, BPW 34 S, BPW 34 S (E9087) Photocurrent IP = f (Ev), VR = 5 V Open-Circuit Voltage VO = f (Ev) Relative Spectral Sensitivity Srel = f () OHF00078 100 P S rel % 80 OHF01066 10 3 A 10 4 mV VO 10 2 10 3 VO OHF00958 160 mW Ptot 140 120 100 60 10 1 Total Power Dissipation Ptot = f (TA) 10 2 P 40 80 60 10 0 10 1 -1 0 40 20 20 10 0 400 500 600 700 800 900 nm 1100 10 0 Dark Current IR = f (VR), E = 0 10 10 3 lx 10 4 EV 10 2 Capacitance OHF00080 OHF00081 100 C pA 0 0 20 40 60 80 C 100 TA Dark Current IR = f (TA), VR = 10 V, E = 0 C = f (VR), f = 1 MHz, E = 0 4000 R 10 1 OHF00082 10 3 R nA pF 80 10 2 3000 70 60 2000 10 1 50 40 30 10 0 1000 20 10 0 0 5 10 15 V VR 0 -2 10 20 10 -1 10 0 10 1 V 10 2 VR Directional Characteristics Srel = f () 40 30 20 10 0 OHF01402 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 2000-01-01 0.8 0.6 0.4 0 20 40 60 80 100 4 120 10 -1 0 20 40 60 80 C 100 TA BPW 34, BPW 34 S, BPW 34 S (E9087) Mazeichnung Package Outlines BPW 34 5.4 (0.213) 4.3 (0.169) Chip position 0.6 (0.024) 0.4 (0.016) 2.2 (0.087) 1.9 (0.075) 3.7 (0.146) 3.5 (0.138) 3.0 (0.118) 1.2 (0.047) 0.7 (0.028) 0.8 (0.031) 0.6 (0.024) 4.9 (0.193) 4.5 (0.177) 0.6 (0.024) 0.4 (0.016) Cathode marking 4.0 (0.157) 0.6 (0.024) 0.6 (0.024) 0.4 (0.016) 0.4 (0.016) 0.35 (0.014) 0.5 (0.020) 0.2 (0.008) 0.3 (0.012) 0.8 (0.031) 0.6 (0.024) 1.8 (0.071) 1.4 (0.055) 0 ... 5 5.08 (0.200) spacing Photosensitive area 2.65 (0.104) x 2.65 (0.104) Approx. weight 0.1 g GEOY6643 BPW 34 S 0.3 (0.012) 6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169) 0.2 (0.008) 0.1 (0.004) 1.1 (0.043) 0.9 (0.035) 0...5 1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004) Chip position 0.9 (0.035) 0.7 (0.028) 1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146) 1.8 (0.071) 0.2 (0.008) Photosensitive area Cathode lead 2.65 (0.104) x 2.65 (0.104) GEOY6863 Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2000-01-01 5 BPW 34, BPW 34 S, BPW 34 S (E9087) BPW 34 S (E9087) 0...5 0.2 (0.008) 0.1 (0.004) 1.1 (0.043) 0.9 (0.035) 0.3 (0.012) 1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004) Chip position 6.7 (0.264) 6.2 (0.244) 1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146) 1.8 (0.071) 0.2 (0.008) 0.9 (0.035) 0.7 (0.028) 4.5 (0.177) 4.3 (0.169) Photosensitive area Cathode lead 2.65 (0.104) x 2.65 (0.104) GEOY6916 Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2000-01-01 6