HAL880UT-K - Micronas - Datasheet.Directory

Hardware

Documentation

Programmable Linear

Hall-Effect Sensor

HAL® 880

Edition Mar. 6, 2012

DSH000152_003EN

Data Sheet

HAL880 DATA SHEET

2Mar. 6, 2012; DSH000152_003EN Micronas

The information and data contained in this document

are believed to be accurate and reliable. The software

and proprietary information contained therein may be

protected by copyright, patent, trademark and/or other

intellectual property rights of Micronas. All rights not

expressly granted remain reserved by Micronas.

Micronas assumes no liability for errors and gives no

warranty representation or guarantee regarding the

suitability of its products for any particular purpose due

to these specifications.

By this publication, Micronas does not assume respon-

sibility for patent infringements or other rights of third

parties which may result from its use. Commercial con-

ditions, product availability and delivery are exclusively

subject to the respective order confirmation.

Any information and data which may be provided in the

document can and do vary in different applications,

and actual performance may vary over time.

All operating parameters must be validated for each

customer application by customers’ technical experts.

Any new issue of this document invalidates previous

issues. Micronas reserves the right to review this docu-

ment and to make changes to the document’s content

at any time without obligation to notify any person or

entity of such revision or changes. For further advice

please contact us directly.

Do not use our products in life-supporting systems,

aviation and aerospace applications! Unless explicitly

agreed to otherwise in writing between the parties,

Micronas’ products are not designed, intended or

authorized for use as components in systems intended

for surgical implants into the body, or other applications

intended to support or sustain life, or for any other

application in which the failure of the product could

create a situation where personal injury or death could

occur.

No part of this publication may be reproduced, photo-

copied, stored on a retrieval system or transmitted

without the express written consent of Micronas.

Micronas Trademarks

–HAL

Micronas Patents

EP 0 953 848, EP 0 647 970, EP 1 039 357,

EP 1 575 013, EP 1 949 034

Third-Party Trademarks

All other brand and product names or company names

may be trademarks of their respective companies.

Contents
Page Section Title
Micronas Mar. 6, 2012; DSH000152_003EN 3
DATA SHEET HAL880
1. Introduction
1.1. Major Applications
2.Features
1.3. Marking Code
1.4. Operating Junction Temperature Range (TJ)
1.5. Hall Sensor Package Codes
1.6. Solderability and Welding
1.7. Pin Connections and Short Descriptions
1.7.1. TO92UT Package
1.7.2. SOIC8 Package
2. Functional Description
2.1. General Function
2.2. Digital Signal Processing and EEPROM
2.3. Calibration Procedure
2.3.1. General Procedure
3. Specifications
3.1. Outline Dimensions
3.2. Dimensions of Sensitive Area
3.3. Package Parameters and Positions of Sensitive Areas
3.4. Absolute Maximum Ratings
3.4.1. Storage and Shelf Life for TO92UT Package
3.4.2. Storage and Shelf Life for SOIC8 Package
3.5. Recommended Operating Conditions
3.6. Characteristics
3.6.1. Definition of Sensitivity Error ES
3.7. Open-Circuit Detection
3.8. Power-On Operation
3.9. Overvoltage and Undervoltage Detection
3.10. Magnetic Characteristics
4. Application Notes
4.1. Application Circuit
4.2. Use of two HAL880 in Parallel
4.3. Temperature Compensation
4.4. Ambient Temperature
4.5. EMC and ESD
5. Programming of the Sensor
5.1. Definition of Programming Pulses
5.2. Definition of the Telegram
5.3. Telegram Codes
5.4. Number Formats
5.5. Register Information
5.6. Programming Information
6. Data Sheet History

HAL880 DATA SHEET

4Mar. 6, 2012; DSH000152_003EN Micronas

Programmable Linear Hall-Effect Sensor

Release Note: Revision bars indicate significant

changes to the previous edition.

1. Introduction

The HAL880 is a new member of the Micronas family

of programmable linear Hall sensors. The HAL880

complements the existing Hall-effect sensor family

HAL8xy to the lower end. It is designed to fulfill the

requirements of today’s state-of-the-art applications for

linear and angular measurements that require pro-

grammability to compensate system tolerances.

The HAL880 is an universal magnetic field sensor with

a linear output based on the Hall effect. The IC can be

used for angle or distance measurements if combined

with a rotating or moving magnet. The major character-

istics like magnetic field range, sensitivity, output qui-

escent voltage (output voltage at B = 0 mT), and out-

put voltage range are programmable in a non-volatile

memory. The sensor has a ratiometric output charac-

teristic, which means that the output voltage is propor-

tional to the magnetic flux and the supply voltage.

The HAL880 features a temperature-compensated

Hall plate with choppered offset compensation, an A/D

converter, digital signal processing, a D/A converter

with output driver, an EEPROM memory with redun-

dancy and lock function for the calibration data, an

EEPROM for customer serial number, a serial interface

for programming the EEPROM, and protection devices

at all pins. The internal digital signal processing is of

great benefit because analog offsets, temperature

shifts, and mechanical stress do not degrade the sen-

sor accuracy.

The HAL880 is programmable by modulating the sup-

ply voltage. No additional programming pin is needed.

The easy programmability allows a 2-point calibration

by adjusting the output voltage directly to the input

signal (like mechanical angle, distance, or current).

Individual adjustment of each sensor during the

customer’s manufacturing process is possible. With

this calibration procedure, the tolerances of the sensor,

the magnet, and the mechanical positioning can be

compensated in the final assembly. This offers a low-

cost alternative for all applications that presently need

mechanical adjustment or laser trimming for calibrating

the system.

In addition, the temperature compensation of the Hall

IC can be fit to common magnetic materials by pro-

gramming first and second order temperature coeffi-

cients of the Hall sensor sensitivity.

The calculation of the individual sensor characteristics

and the programming of the EEPROM memory can

easily be done with a PC and the application kit from

Micronas.

The sensor is designed for hostile industrial and

automotive applications and operates with typically

5 V supply voltage in the ambient temperature range

from 40 °C up to 125 °C. The HAL880 is available

in the very small leaded packages TO92UT-1,

TO92UT-2 and in the eight-pin SOIC8 SMD package.

1.1. Major Applications

Due to the sensor’s versatile programming characteris-

tics and low temperature drifts, the HAL880 is the opti-

mal system solution for applications such as:

– contactless potentiometer,

– rotary position measurement,

– linear movement,

– current measurements.

1.2. Features

– programmable linear Hall effect sensor with ratio-

metric output and digital signal processing

– 12-bit analog output

– multiple programmable magnetic characteristics in a

non-volatile memory (EEPROM) with redundancy

and lock function

– open-circuit (ground and supply line break detec-

tion) with 10 k pull-up and pull-down resistor,

overvoltage and undervoltage detection

– for programming an individual sensor within several

sensors in parallel to the same supply voltage, a

selection can be done via the output pin

– temperature characteristics are programmable for

matching common magnetic materials

– programmable clamping function

– programming through a modulation of the supply

voltage

– operates from 40 °C up to 140 °C junction temper-

ature

– operates from 4.5 V up to 5.5 V supply voltage in

specification and functions up to 8.5 V

– operates with static magnetic fields and dynamic

magnetic fields up to 1 kHz

– overvoltage and reverse-voltage protection at all

pins

– magnetic characteristics extremely robust against

mechanical stress

– short-circuit protected push-pull output

– EMC and ESD optimized design

DATA SHEET HAL880

Micronas Mar. 6, 2012; DSH000152_003EN 5

1.3. Marking Code

The HAL880 has a marking on the package surface

(branded side). This marking includes the name of the

sensor and the temperature range.

1.4. Operating Junction Temperature Range (TJ)

The Hall sensors from Micronas are specified to the

chip temperature (junction temperature TJ).

K: TJ = 40 °C to +140 °C

The relationship between ambient temperature (TA)

and junction temperature is explained in Section 4.4.

on page 27.

1.5. Hall Sensor Package Codes

Example: HAL880UT-K

Type: 880

Package: TO92UT

Temperature Range: TJ = 40 °C to +140 °C

Hall sensors are available in a wide variety of packag-

ing versions and quantities. For more detailed informa-

tion, please refer to the brochure: “Hall Sensors:

Ordering Codes, Packaging, Handling”.

1.6. Solderability and Welding

Solderability

During soldering reflow processing and manual

reworking, a component body temperature of 260 °C

should not be exceeded.

Welding (only TO92UT package)

Device terminals should be compatible with laser and

resistance welding. Please note, that the success of

the welding process is subject to different welding

parameters which will vary according to the welding

technique used. A very close control of the welding

parameters is absolutely necessary in order to reach

satisfying results. Micronas, therefore, does not give

any implied or express warranty as to the ability to

weld the component.

1.7. Pin Connections and Short Descriptions

1.7.1. TO92UT Package

Fig. 1–1: Pin configuration TO92UT

Type Temperature Range

HAL880 880K

HALXXXPA-T

Temperature Range: K

Package: UT for TO92UT-1/-2

Type: 880

DJ for SOIC8-1

Pin No. Pin Name Type Short Description

DD IN Supply Voltage

and Programming

2 GND Ground

3 OUT OUT Push-Pull Output

and Selection Pin

VDD

OUT

GND

HAL880 DATA SHEET

6Mar. 6, 2012; DSH000152_003EN Micronas

1.7.2. SOIC8 Package

Fig. 1–2: Pin configuration SOIC8

Note: Pins number 2, 5, 6, 7, and 8 must be connected

to GND.

Pin No. Pin Name Type Short Description

DD IN Supply Voltage

and

Programming Pin

2,5,6,7,8 GND Ground

3 NC Not Connected

4 OUT OUT Push-Pull Output

and Selection Pin

VDD

OUT

GND

(5 - 8)

3NC

DATA SHEET HAL880

Micronas Mar. 6, 2012; DSH000152_003EN 7

2. Functional Description

2.1. General Function

The HAL880 is a monolithic integrated circuit which

provides an output voltage proportional to the mag-

netic flux through the Hall plate and proportional to the

supply voltage (ratiometric behavior).

The external magnetic field component perpendicular

to the branded side of the package generates a Hall

voltage. The Hall IC is sensitive to magnetic north and

south polarity. This voltage is converted to a digital

value, processed in the Digital Signal processing Unit

(DSP) according to the settings of the EEPROM regis-

ters, converted to an analog voltage with ratiometric

behavior, and stabilized by a push-pull output transis-

tor stage. The function and the parameters for the DSP

are explained in Section 2.2. on page 9.

The setting of the LOCK register disables the program-

ming of the EEPROM memory for all time. This regis-

ter cannot be reset.

As long as the LOCK register is not set, the output

characteristic can be adjusted by programming the

EEPROM registers. The IC is addressed by modulat-

ing the supply voltage (see Fig. 2–1). In the supply

voltage range from 4.5 V up to 5.5 V, the sensor gener-

ates an analog output voltage. After detecting a com-

mand, the sensor reads or writes the memory and

answers with a digital signal on the output pin. The

analog output is switched off during the communica-

tion. Several sensors in parallel to the same supply

and ground line can be programmed individually. The

selection of each sensor is done via its output pin.

The open-circuit detection provides a defined output

voltage if the VDD or GND line is broken. Internal tem-

perature compensation circuitry and the choppered

offset compensation enables operation over the full

temperature range with minimal changes in accuracy

and high offset stability. The circuitry also rejects offset

shifts due to mechanical stress from the package. The

non-volatile memory consists of redundant and non-

redundant EEPROM cells. The non-redundant

EEPROM cells are only used to store production

information inside the sensor. In addition, the sensor

IC is equipped with devices for overvoltage and

reverse-voltage protection at all pins.

Fig. 2–1: Programming with VDD modulation

Fig. 2–2: HAL880 block diagram

VOUT (V)

VDD (V)

HAL

880

VDD

GND

OUT analogdigital

VDD

Internally

Temperature

Oscillator

Switched Digital D/A Analog

GND

EEPROM Memory

Lock Control

stabilized

Supply and

Protection

Devices

Dependent

Bias

Protection

Devices

Hall Plate Signal

Processing Converter Output

A/D

Converter

Open-circuit,

Overvoltage,

Undervoltage

Detection

Open-Circuit

Detection

OUT

VDD

HAL880 DATA SHEET

8Mar. 6, 2012; DSH000152_003EN Micronas

Fig. 2–3: Details of EEPROM and digital signal processing

Mode Register

Filter

5 bit

TCSQ

3 bit

Sensitivity

14 bit

VOQ

11 bit

Min-Out

8 bit 9 bit

Lock

1 bit

Micronas

1 bit

Range

2 bit

Max-Out

EEPROM Memory

A/D

Converter

Digital

Filter

Multiplier Adder Limiter D/A

Converter

Digital Signal Processing

Lock

Control

14 bit

Digital Output

Other: 5 bit

TC Range Select 2 bit

DATA SHEET HAL880

Micronas Mar. 6, 2012; DSH000152_003EN 9

2.2. Digital Signal Processing and EEPROM

The DSP is the main part of this sensor and performs

the signal conditioning. The parameters for the DSP

are stored in the EEPROM registers. The details are

shown in Fig. 2–3 on page 8.

Terminology:

SENSITIVITY: name of the register or register value

Sensitivity: name of the parameter

The EEPROM registers consist of four groups:

Group 1 contains the registers for the adaption of the

sensor to the magnetic system: MODE for selecting

the magnetic field range and filter frequency, TC,

TCSQ and TC-range for the temperature characteris-

tics of the magnetic sensitivity.

Group 2 contains the registers for defining the output

characteristics: SENSITIVITY, VOQ, CLAMP-LOW,

and CLAMP-HIGH. The output characteristic of the

sensor is defined by these 4 parameters.

– The parameter VOQ (Output Quiescent Voltage) cor-

responds to the output voltage at B = 0 mT.

– The parameter Sensitivity defines the magnetic sen-

sitivity:

– The output voltage can be calculated as:

The output voltage range can be clamped by setting

the registers CLAMP-LOW and CLAMP-HIGH in order

to enable failure detection (such as short-circuits to

VDD or GND and open connections).

Group 3 contains the general purpose register GP.

The GP register can be used to store customer infor-

mation, like a serial number after manufacturing.

Micronas will use this GP REGISTER to store informa-

tion such as lot number, wafer number, x and y position

of the die on the wafer, etc. This information can be

readout by the customer and stored in its own data

base or it can stay in the sensor as it is.

Group 4 contains the Micronas registers and LOCK

for the locking of all registers. The Micronas registers

are programmed and locked during production. These

registers are used for oscillator frequency trimming,

A/D converter offset compensation, and several other

special settings.

An external magnetic field generates a Hall voltage

on the Hall plate. The ADC converts the amplified

positive or negative Hall voltage (operates with mag-

netic north and south poles at the branded side of the

package) to a digital value. The digital signal is

filtered in the internal low-pass filter and manipulated

according to the settings stored in the EEPROM. The

digital value after signal processing is readable in the

D/A-READOUT register. Depending on the program-

mable magnetic range of the Hall IC, the operating

range of the A/D converter is from 30 mT … +30 mT

up to 100 mT … +100 mT.

During further processing, the digital signal is multi-

plied with the sensitivity factor, added to the quiescent

output voltage and limited according to the clamping

voltage. The result is converted to an analog signal

and stabilized by a push-pull output transistor stage.

The D/A-READOUT at any given magnetic field

depends on the programmed magnetic field range, the

low-pass filter, TC values, CLAMP-LOW and

CLAMP-HIGH. The D/A-READOUT range is min. 0

and max. 16383.

Note: During application design, it should be taken

into consideration that the maximum and mini-

mum D/A-READOUT should not saturate in the

operational range of the specific application.

Range

The RANGE bits are bit 2 and 3 of the MODE register;

they define the magnetic field range of the A/D

converter.

Sensitivity VOUT

B

-----------------=

VOUT SensitivityBV

+

Magnetic Field Range RANGE

30mT...30 mT 0

60 mT...60 mT 1

80 mT...80 mT 2

100 mT...100 mT 3

HAL880 DATA SHEET

10 Mar. 6, 2012; DSH000152_003EN Micronas

Filter

The FILTER bit is bit number 4 of the MODE register; it

defines the 3 dB frequency of the digital low pass

filter.

Bit Time

The BITTIME bit is bit number 5 of the MODE register;

It defines the protocol bit time for the communication

between the sensor and the programmer board.

Output Format

The OUTPUTMODE bits are the bits numbers 6 to 7 of

the MODE register.

TC Register

The temperature dependence of the magnetic sensitiv-

ity can be adapted to different magnetic materials in

order to compensate for the change of the magnetic

strength with temperature. The adaption is done by

programming the TC (Temperature Coefficient) and

the TCSQ registers (Quadratic Temperature Coeffi-

cient). Thereby, the slope and the curvature of the tem-

perature dependence of the magnetic sensitivity can

be matched to the magnet and the sensor assembly.

As a result, the output voltage characteristic can be

fixed over the full temperature range. The sensor can

compensate for linear temperature coefficients ranging

from about 3100 ppm/K up to 1000 ppm/K and qua-

dratic coefficients from about 7 ppm/K² to 2 ppm/K².

The full TC range is separated in the following four

ranges:

TC (5 bit) and TCSQ (3 bit) have to be selected individu-

ally within each of the four ranges. For example: 0 ppm/k

requires TC-Range = 1, TC = 15 and TCSQ = 1.

Sensitivity

The SENSITIVITY register contains the parameter for

the multiplier in the DSP. The Sensitivity is programma-

ble between 4 and 4. For VDD = 5 V, the register can

be changed in steps of 0.00049.

For all calculations, the digital value from the magnetic

field of the D/A converter is used. This digital informa-

tion is readable from the D/A-READOUT register.

VOQ

The VOQ register contains the parameter for the

adder in the DSP. VOQ is the output voltage without

external magnetic field (B = 0 mT) and programmable

from VDD up to VDD. For VDD = 5 V, the register can

be changed in steps of 4.9 mV.

Note: If VOQ is programmed to a negative voltage, the

maximum output voltage is limited to:

3 dB Frequency FILTER

500 Hz 0

1kHz 1

Bit Time BITTIME

1:64 (Typ. 1.75 ms) 0

1:128 (Typ. 3.5 ms) 1

Output Format OUTPUTMODE

Analog Output (12 bit) 0

TC-Range [ppm/k] GROUP

3100 to 1800 0

1750 to 550 2

500 to +450 (default value) 1

+450 to +1000 3

SENSITIVITY Vout 16384

2DA-Readout VDD



---------------------------------------------------------------=

VOUTmax VOQ VDD

DATA SHEET HAL880

Micronas Mar. 6, 2012; DSH000152_003EN 11

Clamping Voltage

The output voltage range can be clamped in order to

detect failures like short circuits to VDD or GND or an

open circuit.

The CLAMP-LOW register contains the parameter for

the lower limit. The lower clamping voltage is program-

mable between 0 V and VDD/2. For VDD = 5 V, the

The CLAMP-HIGH register contains the parameter for

the upper limit. The upper clamping voltage is pro-

grammable between 0 V and VDD. For VDD = 5 V, in

steps of 9.77 mV.

GP Register

This register can be used to store some information,

such as production date or customer serial number.

Micronas will store production lot number, wafer num-

ber, and x, y coordinates in three blocks of this regis-

ters. The total register contains of four blocks with a

length of 13 bit each. The customer can read out this

information and store it in his production data base for

reference or he can store own production information.

Note: To enable programming of the GP register, bit 0

of the MODE register has to be set to 1. This

LOCKR

By setting the first bit of this 2-bit register, all registers

will be locked and the sensor will no longer respond to

any supply voltage modulation. This bit is active after

the first power-off and power-on sequence after setting

the LOCK bit.

Warning: This register cannot be reset!

D/A-Readout

The 14-bit D/A-READOUT register delivers the actual

digital value of the applied magnetic field after the sig-

nal processing. This register can be read out and is the

basis for the calibration procedure of the sensor in the

system environment.

Note: The MSB and LSB are reversed compared with

all the other registers. Please reverse this

HAL880 DATA SHEET

12 Mar. 6, 2012; DSH000152_003EN Micronas

2.3. Calibration Procedure

2.3.1. General Procedure

For calibration in the system environment, the applica-

tion kit from Micronas is recommended. It contains the

hardware for the generation of the serial telegram for

programming (Programmer Board Version 5.1) and the

corresponding software (PC880) for the input of the

For the individual calibration of each sensor in the cus-

tomer application, a two-point adjustment is recom-

mended. The calibration has be done as follows:

Step 1: Input of the registers which need not be

adjusted individually

The magnetic circuit, the magnetic material with its

temperature characteristics, the filter frequency, the

output mode and the GP register value are given for

this application. Therefore, the values of the following

registers should be identical for all sensors of the

customer application.

–FILTER

(according to the maximum signal frequency)

–RANGE

(according to the maximum magnetic field at the

sensor position)

–OUTPUTMODE

– TC, TCSQ, and TC-RANGE

(depends on the material of the magnet and the

other temperature dependencies of the application)

–GP

(if the customer wants to store own production infor-

mation, it is not necessary to change this register)

The clamping voltages should be set after the adjust-

ment process. This avoids clamping of the D/A-Read-

out value during calibration, because the D/A-Readout

value is needed for the Sensitivity and Voq calculations

during calibration.

Write the appropriate settings into the HAL880

registers.

Step 2: Initialize DSP

As the D/A-READOUT register value depends on

the settings of SENSITIVITY, VOQ, and

CLAMP-LOW/HIGH, these registers have first to be

initialized with defined values:

–VOQ

INITIAL = 2.5 V

– SensitivityINITIAL = 0.5

–Clamp-Low = 0V

– Clamp-High = 4.999 V

Step 3: Define Calibration Points

The calibration points 1 and 2 can be set inside the

specified range. The corresponding values for VOUT1

and VOUT2 result from the application requirements.

For highest accuracy of the sensor, calibration points

near the minimum and maximum input signal are

recommended. The difference of the output voltage

between calibration point 1 and calibration point 2

should be more than 3.5 V.

Step 4: Calculation of VOQ and Sensitivity

Set the system to calibration point 1 and read the reg-

ister D/A-READOUT. The result is the value

D/A-READOUT1.

Now, set the system to calibration point 2, read the

D/A-READOUT2.

With these values, and the target values VOUT1 and

VOUT2, for the calibration points 1 and 2, respectively,

the values for Sensitivity and VOQ are calculated as:

This calculation has to be done individually for each

sensor.

Next, write the calculated values for Sensitivity and

VOQ into the IC for adjusting the sensor. At that time, it

is also possible to store the application specific values

for Clamp-Low and Clamp-High into the sensors

EEPROM.

Lowclampingvoltage VOUT1,2 Highclampingvoltage

Sensitivity 1

---Vout2Vout1–

D/A-Readout2D/A-Readout1–

-----------------------------------------------------------------------------------

16384

---------------

=

VOQ 1

------Vout2 16384

-------------------------------------

D/A-Readout2 8192–Sensitivity2

–

1024

------------



DATA SHEET HAL880

Micronas Mar. 6, 2012; DSH000152_003EN 13

The sensor is now calibrated for the customer applica-

tion. However, the programming can be changed again

and again if necessary.

Note: For a recalibration, the calibration procedure

has to be started at the beginning (step 1). A

new initialization is necessary, as the initial

values from step 1 are overwritten in step 4.

Step 5: Locking the Sensor

The last step is activating the LOCK function by pro-

gramming the LOCK bit. Please note that the LOCK

function becomes effective after power-down and

power-up of the Hall IC. The sensor is now locked and

does not respond to any programming or reading com-

mands.

Warning: This register can not be reset!

HAL880 DATA SHEET

14 Mar. 6, 2012; DSH000152_003EN Micronas

3. Specifications

3.1. Outline Dimensions

Fig. 3–1:

TO92UT-1 Plastic Transistor Standard UT package, 3 leads, spread

Weight approximately 0.12 g

DATA SHEET HAL880

Micronas Mar. 6, 2012; DSH000152_003EN 15

Fig. 3–2:

TO92UT-2 Plastic Transistor Standard UT package, 3 leads

Weight approximately 0.12 g

HAL880 DATA SHEET

16 Mar. 6, 2012; DSH000152_003EN Micronas

Fig. 3–3:

TO92UT-1: Dimensions ammopack inline, spread

DATA SHEET HAL880

Micronas Mar. 6, 2012; DSH000152_003EN 17

Fig. 3–4:

TO92UT-2: Dimensions ammopack inline, not spread

HAL880 DATA SHEET

18 Mar. 6, 2012; DSH000152_003EN Micronas

Fig. 3–5:

SOIC8-1: Plastic Small Outline IC package, 8 leads, gullwing bent, 150 mil

Ordering code: DJ

Weight approximately 0.086 g

DATA SHEET HAL880

Micronas Mar. 6, 2012; DSH000152_003EN 19

3.2. Dimensions of Sensitive Area

0.25 mm x 0.25 mm

3.3. Package Parameters and Positions of Sensitive Areas

3.4. Absolute Maximum Ratings

Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This

is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute

maximum rating conditions for extended periods will affect device reliability.

This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric

fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than abso-

lute maximum-rated voltages to this circuit.

All voltages listed are referenced to ground (GND).

TO92UT-1/-2 SOIC8

x0 mm nominal

y 1.5 mm nominal 0.13 mm nominal

A4 0.3 mm nominal 0.38 mm nominal

Bd 0.3 mm 0.3 mm

D1 4.05 mm  0.05 mm 

H1 min. 22.0 mm

max. 24.1 mm



Symbol Parameter Pin No. Min. Max. Unit Comment

VDD Supply Voltage 1 8.5 8.5 V < 96 hrs (not additive)

VDD Supply Voltage 1 16 16 V < 1 hr (not additive) 1)

IDD Reverse Supply Current 1 50 mA 1) not additive

VOUT Output Voltage 3 or 4 52) 8.5 V 1) not additive

52) 16 V < 1 hr (not additive) 1)

VOUT  VDD Excess of Output Voltage

over Supply Voltage

3 or 4,1 2 V not additive

IOUT Continuous Output Current 3 or 4 10 10 mA not additive

tSh Output Short Circuit Duration 3 or 4 10 min not additive

1) as long as TJmax is not exceeded

2) internal protection resistor = 50 

HAL880 DATA SHEET

20 Mar. 6, 2012; DSH000152_003EN Micronas

3.4.1. Storage and Shelf Life for TO92UT Package

The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of

30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.

Solderability is guaranteed for one year from the date code on the package.

3.4.2. Storage and Shelf Life for SOIC8 Package

The SOIC8 package is a moisture-sensitive Surface Mount Device. The Moisture Sensitivity Level (MSL) is defined

according to JEDEC J-STD-020 (Moisture/ Reflow Sensitivity Classification for Nonhermetic Solid-State Surface

Mount Devices). The device is packed acc. to IPC/JEDEC J-STD-033: Handling, Packing, Shipping and Use of Mois-

ture/Reflow Sensitive Surface Mount Devices. By using these procedures, safe and damage-free reflow can be

achieved. Please follow the instructions printed on each Moisture Barrier Bag. These instructions contain information

about the Moisture Sensitivity Level “MSL”, the maximum reflow temperature “Peak Package Body Temp.” and the

time frame “Time for Mounting after opening the MBB”. The dry-bag shelf life capability of sealed dry-bags is mini-

mum 12 months starting from the “Bag seal date” printed on each bag.

If moisture-sensitive components have been exposed to ambient air for longer than the specified time according to

their MSL, or the humidity indicator card indicates too much moisture after opening a Moisture Barrier Bag (MBB),

the components have to be baked prior to the assembly process. Please refer to IPC/ JEDEC J-STD-033 for details.

Please be aware that packing materials may not withstand higher baking temperatures.

3.5. Recommended Operating Conditions

Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteris-

tics” is not implied and may result in unpredictable behavior, reduce reliability and lifetime of the device.

All voltages listed are referenced to ground (GND).

Symbol Parameter Pin No. Min. Typ. Max. Unit Remarks

VDD Supply Voltage 1 4.5 5 5.5 V

IOUT Continuous Output Current 3 or 4 1.2 1.2 mA

RLLoad Resistor 3 or 4 5.0 10 kCan be pull-up or pull-down resistor

CLLoad Capacitance 3 or 4 0.33 100 1000 nF

NPRG Number of EEPROM

Programming Cycles

100 cycles 0°C < Tamb < 55°C

TJJunction Temperature

Range 1) 40

40

125

150

170

°C for 8000 h (not additive)

for 2000 h (not additive)

for 1000 h (not additive)

1) Depends on the temperature profile of the application. Please contact Micronas for life time calculations.

DATA SHEET HAL880

Micronas Mar. 6, 2012; DSH000152_003EN 21

3.6. Characteristics

at TJ = 40 °C to +140 °C, VDD = 4.5 V to 5.5 V, GND = 0 V after programming and locking,

at Recommended Operating Conditions if not otherwise specified in the column “Conditions”.

Typical Characteristics for TJ = 25 °C and VDD = 5 V.

Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions

IDD Supply Current

over Temperature Range

1710mA

VDDZ Overvoltage Protection

at Supply

117.5 20 V IDD = 25 mA, TJ = 25 °C, t = 20 ms

VOZ Overvoltage Protection

at Output

3 or 4 17 19.5 V IO = 10 mA, TJ = 25 °C, t = 20 ms

Resolution 3 or 4 12 bit ratiometric to VDD 1)

INL Non-Linearity of Output Voltage over

Temperature

3 or 4 1.0 0 1.0 % % of supply voltage2)

For Vout = 0.35 V ... 4.65 V;

VDD = 5 V, Sensitivity  0.95

ERRatiometric Error of Output

over Temperature

(Error in VOUT / VDD)

3 or 4 1.0 0 1.0 % VOUT1 - VOUT2> 2V

during calibration procedure

ES Error in Magnetic Sensitivity over

Temperature Range

3 or 4 6 0 6 % (see Section 3.6.1. on page 23)

VOUTCL Accuracy of Output Voltage at Clamping

Low Voltage over Temperature Range

3 or 4 30 0 30 mV RL = 5 k, VDD = 5 V

VOUTCH Accuracy of Output Voltage at Clamping

High Voltage over Temperature Range

3 or 4 30 0 30 mV RL = 5 k, VDD = 5 V

VOUTH Upper Limit of Signal Band3) 3 or 4 4.65 4.8 V V

DD = 5 V, 1 mA IOUT 1mA

VOUTL Lower Limit of Signal Band3) 3 or 4 0.2 0.35 V VDD = 5 V, 1 mA IOUT 1mA

fADC Internal ADC Frequency over

Temperature Range

128 kHz

tr(O) Step Response Time of Output 3 or 4 1

0.5

3 dB Filter frequency = 500 Hz

3 dB Filter frequency = 1 kHz

CL = 10 nF, time from 10% to 90%

of final output voltage for a step like

signal Bstep from 0 mT to Bmax

(se.....)

td(O) Delay Time of Output 3 or 4 0.1 0.5 ms CL = 10 nF

tPOD Power-Up Time (Time to Reach Stabilized

Output Voltage)

1.5 1.7 1.9 ms CL = 10 nF, 90% of VOUT

BW Small Signal Bandwidth (3 dB) 3 or 4 1kHz BAC < 10 mT;

3 dB Filter frequency = 1 kHz

VOUTn RMS Noise of Output Voltage 3 or 4 6 15 mV magnetic range = 60 mT4)

3 dB Filter frequency = 500 Hz

Sensitivity  0.7; C = 100 nF (VDD

& VOUT to GND)

DACGE D/A-Converter Glitch Energy 3 or 4 400 nVs 4)

ROUT Output Resistance over Recommended

Operating Range

3 or 4 110VOUTLmax VOUT VOUTHmin

1) Output DAC full scale = 5 V ratiometric, Output DAC offset = 0 V, Output DAC LSB = VDD/4096

2) if more than 50% of the selected magnetic field range is used (=> Sensitivity  0.95) and the temperature compensation is suitable.

INL = VOUT - VOUTLSF with VOUTLSF = Least Square Fit Line voltage based on VOUT measurements at a fixed temperature

3) Signal Band Area with full accuracy is located between VOUTL and VOUTH. The sensor accuracy is reduced below VOUTL and above VOUTH

4) The energy of the impulse injected into the analog output when the code in the D/A-Converter register changes state. This energy is normally

specified as the area of the glitch in nVs.

HAL880 DATA SHEET

22 Mar. 6, 2012; DSH000152_003EN Micronas

Fig. 3–6: Recommended pad size SOIC8 package

TO92UT Packages

Rthja

Rthjc

Rthjs

Thermal Resistance

Junction to Air

Junction to Case

Junction to Solder Point



235

128

K/W

Measured with a 1s0p board

Measured with a 1s1p board

SOIC8 Package

Rthja

Rthjc

Thermal Resistance

Junction to Air

Junction to Case



142

K/W

Measured with a 1s0p board

Measured with a 1s1p board

Measured with a 1s0p board

Measured with a 1s1p board

Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions

2.200

0.600

1.270

5.200

DATA SHEET HAL880

Micronas Mar. 6, 2012; DSH000152_003EN 23

3.6.1. Definition of Sensitivity Error ES

ES is the maximum of the absolute value of 1 minus

the quotient of the normalized measured value1) over

the normalized ideal linear2) value:

In the example below, the maximum error occurs at

10 °C:

Fig. 3–7: ES definition example

1) normalized to achieve a least-square-fit straight-line

that has a value of 1 at 25 °C

2) normalized to achieve a value of 1 at 25 °C

ES max abs meas

ideal

------------1–









Tmin, Tmax

ES 1.001

0.993

------------- 1–0.8%==

50 75 100 125 150 175

–25

–50

0.98

0.99

1.00

1.01

1.02

1.03

-10

0.993

1.001

temperature [°C]

relative sensitivity related to 25 °C value

ideal 200 ppm/k

least-square-fit straight-line of

normalized measured data

measurement example of real

sensor, normalized to achieve a

value of 1 of its least-square-fit

straight-line at 25 °C

HAL880 DATA SHEET

24 Mar. 6, 2012; DSH000152_003EN Micronas

3.7. Open-Circuit Detection

at TJ = 40 °C to +140 °C. Typical Characteristics for TJ = 25 °C, after locking the sensor

3.8. Power-On Operation

at TJ = 40 °C to +140 °C, after programming and locking. Typical Characteristics for TJ = 25 °C.

3.9. Overvoltage and Undervoltage Detection

at TJ = 40 °C to +140 °C. Typical Characteristics for TJ = 25 °C, after programming and locking

Note: The over- and undervoltage detection is activated only after locking the sensor!

3.10. Magnetic Characteristics

at TJ = 40 °C to +140 °C, VDD = 4.5 V to 5.5 V, GND = 0 V after programming and locking,

at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.

Typical Characteristics for TJ = 25 °C and VDD = 5 V.

Symbol Parameter Pin No. Min. Typ. Max. Unit Comment

VOUT Output Voltage at

Open VDD Line

3 or 4 0 0 0.15 V VDD = 5 V

RL = 10 kto 200 k

VOUT Output Voltage at

Open GND Line

3 or 4 4.85 4.9 5.0 V VDD = 5 V

RL = 10 kto 200 k

RL: can be pull-up or pull-down resistor

Symbol Parameter Min. Typ. Max. Unit

PORUP Power-On Reset Voltage (UP) 3.4 V

PORDOWN Power-On Reset Voltage (DOWN) 3.0 V

Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions

VDD,UV Undervoltage Detection Level 1 4.2 4.3 V 1)

VDD,OV Overvoltage Detection Level 1 8.5 8.9 10.0 V 1)

1) If the supply voltage drops below VDD,UV or rises above VDD,OV

, the output voltage is switched to VDD (97% of VDD at RL = 10 k to GND).

The CLAMP-LOW register has to be set to a voltage  200 mV.

Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions

BOffset Magnetic Offset 3 or 4 0.5 0 0.5 mT B = 0 mT, IOUT = 0 mA, TJ = 25 °C,

unadjusted sensor

BOffset/T Magnetic Offset Change

due to TJ

3 or 4 15 0 15 T/K B = 0 mT, IOUT = 0 mA

DATA SHEET HAL880

Micronas Mar. 6, 2012; DSH000152_003EN 25

4. Application Notes

4.1. Application Circuit

For EMC protection, it is recommended to connect one

ceramic 100 nF capacitor each between ground and

the supply voltage, respectively the output voltage pin.

In addition, the input of the controller unit should be

pulled-down with a 10 k resistor and a ceramic

100 nF capacitor.

Please note that during programming, the sensor will

be supplied repeatedly with the programming voltage

of 12.5 V for 100 ms. All components connected to the

VDD line at this time must be able to resist this voltage.

Fig. 4–1: Recommended application circuit

4.2. Use of two HAL880 in Parallel

Two different HAL880 sensors which are operated in

parallel to the same supply and ground line can be pro-

grammed individually. In order to select the IC which

should be programmed, both Hall ICs are inactivated

by the “Deactivate” command on the common supply

line. Then, the appropriate IC is activated by an “Acti-

vate” pulse on its output. Only the activated sensor will

react to all following read, write, and program com-

mands. If the second IC has to be programmed, the

“Deactivate” command is sent again and the second IC

can be selected.

Note: The multi-programming of two sensors works

only if the outputs of the two sensors are pulled

to GND with a 10 k pull-down resistor.

Fig. 4–2: Parallel operation of two HAL880

OUT

VDD

GND

100 nF HAL880

10 k

C

100 nF 100 nF

HAL880

GND

100 nF

HAL880

100 nF 100 nF

Sensor A Sensor B

VDD

OUT B & Select B

OUT A & Select A

HAL880 DATA SHEET

26 Mar. 6, 2012; DSH000152_003EN Micronas

4.3. Temperature Compensation

The relationship between the temperature coefficient

of the magnet and the corresponding TC, TCSQ, and

TC-Range codes for linear compensation is given in

the following table. In addition to the linear change of

the magnetic field with temperature, the curvature can

be adjusted as well. For this purpose, other TC, TCSQ,

and TC-Range combinations are required which are

not shown in the table. Please contact Micronas for

more detailed information on this higher order temper-

ature compensation.

Note: The above table shows only some approximate

values. Micronas recommends to use the

TC-Calc software to find optimal settings for

temperature coefficients. Please contact

Micronas for more detailed information.

Temperature

Coefficient of

Magnet (ppm/K)

TC-Range TC TCSQ

1075 3 31 7

1000 3 28 1

900 3 24 0

750 3 16 2

675 3 12 2

575 3 8 2

450 3 4 2

400 1 31 0

250 1 24 1

150 1 20 1

50 1 16 2

01151

100 1 12 0

200 1 8 1

300 1 4 4

400 1 0 7

500 1 0 0

600 2 31 2

700 2 28 1

800 2 24 3

900 2 20 6

1000 2 16 7

1100 2 16 2

1200 2 12 5

1300 2 12 0

1400 2 8 3

1500 2 4 7

1600 2 4 1

1700 2 0 6

1800 0 31 6

1900 0 28 7

2000 0 28 2

2100 0 24 6

2200 0 24 1

2400 0 20 0

2500 0 16 5

2600 0 14 5

2800 0 12 1

2900 0 8 6

3000 0 8 3

3100 0 4 7

3300 0 4 1

3500 0 0 4

Temperature

Coefficient of

Magnet (ppm/K)

TC-Range TC TCSQ

DATA SHEET HAL880

Micronas Mar. 6, 2012; DSH000152_003EN 27

4.4. Ambient Temperature

Due to the internal power dissipation, the temperature

on the silicon chip (junction temperature TJ) is higher

than the temperature outside the package (ambient

temperature TA).

At static conditions and continuous operation, the fol-

lowing equation applies:

For typical values use the typical parameters. For

worst case calculation, use the max. parameters for

IDD and Rth, and the max. value for VDD from the appli-

cation.

For VDD = 5.5 V, Rth = 235 K/W, and IDD = 10 mA, the

temperature difference T = 12.93 K.

For all sensors, the junction temperature TJ is speci-

fied. The maximum ambient temperature TAmax can be

calculated as:

4.5. EMC and ESD

The HAL880 is designed for a stabilized 5 V supply.

Interferences and disturbances conducted along the

12 V on-board system (product standard ISO 7637

part 1) are not relevant for these applications.

For applications with disturbances by capacitive or

inductive coupling on the supply line, or by radiated

disturbances, the application circuit shown in Fig. 4–1

on page 25 is recommended. Applications with this

arrangement should pass the EMC tests according to

the product standards ISO 7637 part 3 (electrical tran-

sient transmission by capacitive or inductive coupling).

Please contact Micronas for the detailed investigation

reports with the EMC and ESD results.

TJTAT+=

TIDD VDD

RthJ

=

TAmax TLmax T–=

HAL880 DATA SHEET

28 Mar. 6, 2012; DSH000152_003EN Micronas

5. Programming of the Sensor

5.1. Definition of Programming Pulses

The sensor is addressed by modulating a serial tele-

gram on the supply voltage. The sensor answers with a

serial telegram on the output pin.

The bits in the serial telegram have a different bit time

for the VDD-line and the output. The bit time for the

VDD-line is defined through the length of the Sync Bit

at the beginning of each telegram. The bit time for the

output is defined through the Acknowledge Bit.

A logical “0” is coded as no voltage change within the

bit time. A logical “1” is coded as a voltage change

between 50% and 80% of the bit time. After each bit, a

voltage change occurs.

5.2. Definition of the Telegram

Each telegram starts with the Sync Bit (logical 0),

3 bits for the Command (COM), the Command Parity

Bit (CP), 4 bits for the Address (ADR), and the

Address Parity Bit (AP).

There are 4 kinds of telegrams:

– Write a register (see Fig. 5–2 on page 30)

After the AP Bit follow 14 Data Bits (DAT) and the

Data Parity Bit (DP). If the telegram is valid and the

command has been processed, the sensor answers

with an Acknowledge Bit (logical 0) on the output.

– Read a register (see Fig. 5–3 on page 30)

After evaluating this command, the sensor answers

with the Acknowledge Bit, 14 Data Bits, and the

Data Parity Bit on the output.

– Programming the EEPROM cells (see Fig. 5–4 on

page 30)

After evaluating this command, the sensor answers

with the Acknowledge Bit. After the delay time tw,

the supply voltage rises up to the programming

voltage.

– Activate a sensor (see Fig. 5–5 on page 30)

If more than one sensor is connected to the supply

line, selection can be done by first deactivating all

sensors. The output of all sensors will be pulled to

ground by the internal 10 k resistors. With an Acti-

vate pulse on the appropriate output pin, an individ-

ual sensor can be selected. All following commands

will only be accepted from the activated sensor.

Fig. 5–1: Definition of logical 0 and 1 bit

trtf

tp0 tp0

logical 0

VDDH

VDDL

tp0

logical 1

VDDH

VDDL

or tp0

tp1

DATA SHEET HAL880

Micronas Mar. 6, 2012; DSH000152_003EN 29

Table 5–1: Telegram parameters

Symbol Parameter Pin Min. Typ. Max. Unit Remarks

VDDL Supply Voltage for Low Level

during Programming

155.66V

VDDH Supply Voltage for High Level

during Programming

1 6.8 8.0 8.5 V

trRise Time 1 0.05 ms

tfFall Time 1 0.05 ms

tp0 Bit Time on VDD 1 1.7 1.8 1.9 ms tp0 is defined through the Sync Bit

tpOUT Bit Time on Output Pin 3 or 4234mst

pOUT is defined through the

Acknowledge Bit

tp1 Voltage Change for Logical 1 1, 3 or

50 65 80 % % of tp0 or tpOUT

VDDPROG Supply Voltage for

Programming the EEPROM

1 12.4 12.5 12.6 V

tPROG Programming Time for EEPROM 1 95 100 105 ms

trp Rise Time of Programming Voltage 1 0.2 0.5 1 ms

tfp Fall Time of Programming Voltage 1 0 1ms

twDelay Time of Programming Voltage

after Acknowledge

10.50.71ms

Vact Voltage for an Activate Pulse 3 or 4 345V

tact Duration of an Activate Pulse 3 or 4 0.05 0.1 0.2 ms

Vout,deact Output Voltage after Deactivate

Command

3 or 4 0 0.1 0.2 V

HAL880 DATA SHEET

30 Mar. 6, 2012; DSH000152_003EN Micronas

Fig. 5–2: Telegram for coding a Write command

Fig. 5–3: Telegram for coding a Read command

Fig. 5–4: Telegram for coding the EEPROM programming

Fig. 5–5: Activate pulse

Sync COM CP ADR AP DAT DP

Acknowledge

VDD

VOUT

WRITE

Sync COM CP ADR AP

DAT DPAcknowledge

VDD

VOUT

READ

Sync COM CP ADR AP

tPROG

Acknowledge

VDD

VOUT

ERASE and PROM trp tfp

VDDPROG

tACT

VOUT

trtf

VACT

DATA SHEET HAL880

Micronas Mar. 6, 2012; DSH000152_003EN 31

5.3. Telegram Codes

Sync Bit

Each telegram starts with the Sync Bit. This logical “0”

pulse defines the exact timing for tp0.

Command Bits (COM)

The Command code contains 3 bits and is a binary

number. Table 5–2 shows the available commands and

the corresponding codes for HAL880.

Command Parity Bit (CP)

This parity bit is “1”, if the number of zeros within the

3 Command Bits is uneven. The parity bit is “0”, if the

number of zeros is even.

Address Bits (ADR)

The Address code contains 4 bits and is a binary num-

ber. Table 5–3 on page 33 shows the available

addresses for the HAL880 registers.

Address Parity Bit (AP)

This parity bit is “1”, if the number of zeros within the

4 Address bits is uneven. The parity bit is “0”, if the

number of zeros is even.

Data Bits (DAT)

The 14 Data Bits contain the register information.

The registers use different number formats for the Data

Bits. These formats are explained in Section 5.4. on

page 32

In the Write command, the last bits are valid. If, for

example, the TC register (10 bits) is written, only the

last 10 bits are valid.

In the Read command, the first bits are valid. If, for

example, the TC register (10 bits) is read, only the first

10 bits are valid.

Data Parity Bit (DP)

This parity bit is “1”, if the number of zeros within the

binary number is even. The parity bit is “0”, if the num-

ber of zeros is uneven.

Acknowledge

After each telegram, the output answers with the

Acknowledge signal. This logical “0” pulse defines the

exact timing for tpOUT

Table 5–2: Available commands

Command Code Explanation

READ 2 read a register

WRITE 3 write a register

PROM 4 program all nonvolatile registers (except the lock bits)

ERASE 5 erase all nonvolatile registers (except the lock bits)

HAL880 DATA SHEET

32 Mar. 6, 2012; DSH000152_003EN Micronas

5.4. Number Formats

Binary number:

The most significant bit is given as first, the least signif-

icant bit as last digit.

Example: 101001 represents 41 decimal.

Signed binary number:

The first digit represents the sign of the following

binary number (1 for negative, 0 for positive sign).

Example: 0101001 represents +41 decimal

1101001 represents 41 decimal

Two’s complementary number:

The first digit of positive numbers is “0”, the rest of the

number is a binary number. Negative numbers start

with “1”. In order to calculate the absolute value of the

number, calculate the complement of the remaining

digits and add “1”.

Example: 0101001 represents +41 decimal

1010111 represents 41 decimal

5.5. Register Information

CLAMP-LOW

– The register range is from 0 up to 255.