BA892V-04W
Document Number 85649
Rev. 1.2, 24-Jun-05
Vishay Semiconductors
www.vishay.com
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18379
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Band Switching Diodes - Dual, Series in SOT-323
Description
The main purpose of the BA892V-04W is the Band
Switching. Biased with a DC forward current for sig-
nals at frequencies over 100 MHz up to 3 GHz this
diode behaves like a current controlled resistor and
not as a diode any more.
Depending on the forward current the forward resis-
tance rf can be switched far below 1 Ω, so that the
Switch is closed.
To open the Switch, the BA892V-04W has to be
driven in the reverse mode where the BA892V-04W
behaves like a small capacitor with high isolation.
So typical applications for this Band Switching Diode
are mobile and TV-applications.
Features
• Low forward resistance
• Small reverse capacitance
• Lead (Pb)-free component
• Component in accordance to
RoHS 2002/95/EC and WEEE 2002/96/EC
Applications
Band switching up to 3 GHz
Low loss band-switching in TV/VTR tuners
Mechanical Data
Case: SOT-323 Plastic case
Weight: approx. 6.0 mg
Packaging Codes/Options:
GS08 / 3 k per 7" reel (8 mm tape), 3 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Part Ordering code Marking Remarks
BA892V-04W BA892V-04W-GS08 AW4 Tape and Reel
Parameter Test condition Symbol Value Unit
Reverse voltage VR35 V
Forward current IF100 mA
Junction temperature Tj150 °C
Storage temperature range Tstg -55 to +150 °C
Parameter Test condition Symbol Value Unit
Junction soldering point RthJS 100 K/W
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Document Number 85649
Rev. 1.2, 24-Jun-05
BA892V-04W
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter Test condition Symbol Min Typ. Max Unit
Reverse voltage IR = 10 µAV
R35 V
Reverse current VR = 20 V IR20 nA
Forward voltage IF = 100 mA VF1.1 V
Diode capacitance f = 1 MHz, VR = 0 CD1.1 pF
f = 1 MHz, VR = 1 V CD0.9 1.2 pF
f = 1 MHz, VR = 3 V CD0.85 1.1 pF
Forward resistance f = 100 MHz, IF = 1 mA rf0.6 Ω
f = 100 MHz, IF = 3 mA rf0.45 0.7 Ω
f = 100 MHz, IF = 10 mA rf0.34 0.5 Ω
Charge carrier life time IF = 10 mA, IR = 6 mA, iR = 3 mA trr 90 ns
Figure 1. Forward Resistance vs. Forward Current
Figure 2. Diode Capacitance vs. Reverse Voltage
I - Forward Current (mA)
F
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0 4 8 12 16 20 24 28
18332
VR- Reverse V oltage (V)
C - Diode Capacitance ( pF )
D
f=1MHz
Figure 3. Forward Current vs. Forward Voltage
Figure 4. Reverse Voltage vs. Reverse Current
0.01
0.10
1.00
10.00
100.00
0.5 0.6 0.7 0.8 0.9 1.0
I - Forward Current ( mA )
V
F
- Forward Voltage(V)
18324
F
0
10
20
30
40
50
60
70
0.01 0.1 1.0 10 100 1000
I
R
- Reverse Current ( µA)
18328
V - Reverse Voltage(V)
R
BA892V-04W
Document Number 85649
Rev. 1.2, 24-Jun-05
Vishay Semiconductors
www.vishay.com
3
Package Dimensions in mm (Inches)
Figure 5. Typical Charge Recovery Curve
-8
-6
-4
-2
0
2
4
6
8
10
12
-50 0 50 100 150 200
18336
Recovery Time ( ns )
I - Forward Current ( mA )
F
IF=10mA
IR=6mA
irr =3mA
96 12236
0.9 (0.035)
0.39 (0.015)
Mounting Pad Layout
0.95 (0.37) 0.95 (0.037)
2.0 (0.079)
1.00 (0.039)
10
0.10 (0.004) 0.10 (0.004)
2.05 (0.080)
2.00 (0.078)
1.25 (0.049)
0.30 (0.012)
1.3 (0.051)
S
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Document Number 85649
Rev. 1.2, 24-Jun-05
BA892V-04W
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
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