DXT651 60V LOW VCE(sat) NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data * * * * * * * * * * * * Epitaxial Planar Die Construction Complementary PNP Type Available (DXT751) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free, RoHS Compliant (Note 1) Halogen and Antimony Free "Green" Device (Note 2) Case: SOT89 Case material: molded Plastic. "Green" molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 0.052 grams (Approximate) C SOT89 E B C C B E Top View Device symbol Top View Pinout Ordering Information (Note 3) Product DXT651-13 Notes: Marking KN2 Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500 1. No purposefully added lead. 2. "Green" devices, Halogen and Antimony Free, Diodes Inc's "Green" Policy can be found on our website at http://www.diodes.com 3. For Packaging Details, go to our website at http://www.diodes.com. Marking Information YWW KN2 DXT651 Document Number: DS31184 Rev: 4 - 2 KN2 = Product Type Marking Code = Manufacturer's Marking Code YWW = Date Code Marking Y = Last digit of year (ex: 7 = 2007) WW = Week code (01 - 53) 1 of 5 www.diodes.com January 2011 (c) Diodes Incorporated DXT651 Maximum Ratings @TA = 25C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Pulse Collector Current Symbol VCBO VCEO VEBO IC ICM Value 80 60 5 3 6 Unit V V V A A Value 1 125 18.2 -55 to +150 Unit W C/W C/W C Thermal Characteristics @TA = 25C unless otherwise specified Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient Air (Note 4) Thermal Resistance, Junction to Leads Operating and Storage Temperature Range Symbol PD RJA RJL TJ, TSTG Electrical Characteristics @TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Symbol Min Typ Max Unit BVCBO BVCEO BVEBO 80 60 5 V V V Collector-Base Cutoff Current ICBO Emitter-Base Cutoff Current ON CHARACTERISTICS (Note 5) IEBO 0.1 10 0.1 Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage VBE(sat) VBE(on) 0.08 0.23 0.85 0.8 0.3 0.6 1.25 1 V V V V hFE 70 100 80 40 200 200 185 120 300 fT Cobo ton toff 140 200 35 230 30 MHz pF ns ns DC Current Gain AC CHARACTERISTICS Transition Frequency Output Capacitance Switching Times Notes: A A Test Conditions IC = 100A, IE = 0 IC = 10mA, IB = 0 IE = 100A, IC = 0 VCB = 60V, IE = 0 VCB = 60V, IE = 0, TA = 100C VEB = 4V, IC = 0 IC = 1A, IB = 100mA IC = 3A, IB = 300mA IC = 1A, IB = 100mA VCE = 2V, IC = 1A VCE = 2V, IC = 50mA VCE = 2V, IC = 500mA VCE = 2V, IC = 1A VCE = 2V, IC = 2A VCE = 5V, IC = 100mA, f = 100MHz VCB = 10V, f = 1MHz VCC = 10V. IC = 500mA, IB1 = IB2 = 50mA 4. Device mounted on FR-4 PCB 5. Measured under pulsed conditions. Pulse width = 300 s. Duty cycle 2%. DXT651 Document Number: DS31184 Rev: 4 - 2 2 of 5 www.diodes.com January 2011 (c) Diodes Incorporated DXT651 2.0 1.2 IB = 10mA IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (W) 1.8 1.0 0.8 0.6 0.4 0.2 1.6 IB = 8mA 1.4 1.2 IB = 6mA 1.0 0.8 IB = 4mA 0.6 0.4 IB = 2mA 0.2 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) 0 0.0 0 1 2 3 4 5 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs.Collector-Emitter Voltage 0.35 350 300 TA = 150C 250 TA = 85C 200 TA = 25C 150 100 0.3 VCE(SAT), COLLECTOR EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN VCE = 2V TA = -55C IC/IB = 10 0.25 0.2 0.15 TA = 150C 0.1 T A = 85C TA = 25C 0.05 50 TA = -55C 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Fig. 3 Typical DC Current Gain vs. Collector Current VCE = 2V 1.0 TA = -55C IC /IB = 10 TA = -55C 0.6 0.6 TA = 25C 0.0 0.0001 1.0 0.8 0.8 0.2 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.2 1.2 0.4 0 0.0001 10 VBE(SAT), BASE EMITTER SATURATION VOLTAGE (V) VBE(ON), BASE EMITTER TURN-ON VOLTAGE (V) 0 0.001 TA = 25C 0.4 TA = 85C 0.2 TA = 150C 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current DXT651 Document Number: DS31184 Rev: 4 - 2 TA = 85C 3 of 5 www.diodes.com TA = 150C 0 0.0001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current January 2011 (c) Diodes Incorporated DXT651 250 50 fT, GAIN-BANDWIDTH PRODUCT (MHz) Cobo, OUTPUT CAPACITANCE (pF) 60 f = 1MHz 40 30 20 10 0 0 200 150 100 VCE = 5V f = 100MHz 50 0 0 5 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Output Capacitance Characteristics 20 40 60 80 100 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current Package Outline Dimensions R0 D1 .2 00 C E H L B e B1 e1 8 (4 X ) A SOT89 Dim Min Max A 1.40 1.60 B 0.44 0.62 B1 0.35 0.54 C 0.35 0.43 D 4.40 4.60 D1 1.52 1.83 E 2.29 2.60 e 1.50 Typ e1 3.00 Typ H 3.94 4.25 L 0.89 1.20 All Dimensions in mm D Suggested Pad Layout X1 X2 (2x) Y1 Y3 Y4 Y2 Y C Dimensions Value (in mm) X 0.900 X1 1.733 X2 0.416 Y 1.300 Y1 4.600 Y2 1.475 Y3 0.950 Y4 1.125 C 1.500 X (3x) DXT651 Document Number: DS31184 Rev: 4 - 2 4 of 5 www.diodes.com January 2011 (c) Diodes Incorporated DXT651 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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