BAS 40W...
Oct-07-19991
Silicon Schottky Diode
• General-purpose diode for high-speed switching
• Circuit protection
• Voltage clamping
• High-level detecting and mixing
1
3
VSO05561
2
BAS 40-06WBAS 40-05W
BAS 40-04W
EHA07004
1
3
2
EHA07005
1
3
2
EHA07006
1
3
2
Type Marking Pin Configuration Package
BAS 40-04W
BAS 40-05W
BAS 40-06W
44s
45s
46s
1 = A1
1 = A1
1 = C1
2 = C2
2 = A2
2 = C2
3=C1/A2
3=C1/C2
3=A1/A2
SOT-323
SOT-323
SOT-323
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage VR40 V
Forward current IF120 mA
Surge forward current, t ≤ 10ms IFSM 200
Total power dissipation, TS ≤ 106°C Ptot 250 mW
Junction temperature Tj150 °C
Operating temperature range Top -55 ... 150
Storage temperature Tst
g
-55 ... 150
Maximum Ratings
Junction - ambient 1) RthJA ≤ 395 K/W
Junction - soldering point RthJS ≤ 175
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 1cm2 Cu
BAS 40W...
Oct-07-19992
Electrical Characteristics at T
A
= 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Breakdown voltage
I(BR) = 10 µA
V(BR) 40 - - V
Reverse current
VR = 30 V
VR = 40 V
IR
-
-
-
-
1
10
µA
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 15 mA
VF
250
350
600
310
450
720
380
500
1000
mV
AC characteristics
5
Diode capacitance
VR = 0 V, f = 1 MHz
pF- 3
CT
-Charge carrier life time
IF = 25 mA
ps
τ10-
Differential forward resistance
IF = 10 mA, f = 10 kHz
Ω
-RF- 10
Series inductance Ls- 2 - nH
BAS 40W...
Oct-07-19993
Forward current IF = f (VF)
TA = 25°C
V
EHB00157
F
F
Ι
0
BAS 40W/BAS 140W
12V3
mA
-40 ˚C=
A
T
10
-1
25 ˚C
85 ˚C
10
0
10
1
10
2
Reverse current IR = f (VR)
TA = Parameter
V
EHB00156
R
R
Ι
0
BAS 40W/BAS 140W
10 20 V 30
Aµ
T
A
=85 ˚C
25 ˚C=
A
T
10
-2
-1
10
0
10
1
10
2
10
3
10
Diode capacitance CT = f (VR)
f = 1MHz
V
EHB00159
R
CT
0
BAS 40W/BAS 140W
10 20 V 30
0
1
2
3
pF
4
Differential forward resistance rf = f (IF)
f = 10 kHz
Ι
EHB00158
F
F
R
BAS 40W/BAS 140W
Ω
10
0
10
1
10
2
10
3
10
-1 0
10
1
10
2
10mA
BAS 40W...
Oct-07-19994
Forward current IF = f (TA*;TS)
* Package mounted on epoxy
A
T
S
T
˚C
mA
A
T;
150100500
0
Ι
F
S
EHD07167
T
40
60
80
100
120
140
160
200
20
BAS 40W
Permissible pulse load RthJS = f (tp)
t
EHD07168
p
10
-6
10
-5
10
-4
10
-3
10
-2
s10
0
5
T
t
p
D=t
p
T
10
0
1
10
2
10
D =
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
R
thJS
5
5
K/W
BAS 40W
Permissible pulse load IFmax / IFDC = f (tp)
t
EHD07169
p
F
10
-6
10
-5
10
-4
10
-3
10
-2
s10
0
T
t
p
D=
t
p
T
D =
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Ι
max
DC
Ι
F
2
10
5
5
10
1
0
10
BAS 40W