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FDG8842CZ tm Complementary PowerTrench(R) MOSFET Q1:30V,0.75A,0.4; Q2:-25V,-0.41A,1.1 Features General Description Q1: N-Channel These N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell Max rDS(on) = 0.4 at VGS = 4.5V, ID = 0.75A density, DMOS technology. This very high density process is Max rDS(on) = 0.5 at VGS = 2.7V, ID = 0.67A especially Q2: P-Channel device has been designed especially for low voltage applica- tailored to minimize on-state resistance. This tions as a replacement for bipolar digital transistors and small Max rDS(on) = 1.1 at VGS = -4.5V, ID = -0.41A signal MOSFETs. Since bias resistors are not required, this dual Max rDS(on) = 1.5 at VGS = -2.7V, ID = -0.25A digital FET can replace several different digital transistors, with Very low level gate drive requirements operation in 3V circuits(VGS(th) <1.5V) different bias resistor values. allowing direct Very small package outline SC70-6 RoHS Compliant S2 G2 S1 D1 D1 G1 D2 G1 D2 S1 SC70-6 Q1 G2 Q2 S2 Pin 1 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS Drain to Source Voltage VGS Gate to Source Voltage Drain Current -Continuous -Pulsed 2.2 -1.2 ID Parameter Q1 30 Power Dissipation for Single Operation PD TJ, TSTG (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Q2 -25 Units V 12 -8 V 0.75 -0.41 0.36 0.30 -55 to +150 A W C Thermal Characteristics RJA Thermal Resistance, Junction to Ambient Single operation (Note 1a) 350 RJA Thermal Resistance, Junction to Ambient Single operation (Note 1b) 415 C/W Package Marking and Ordering Information Device Marking .42 (c)2007 Fairchild Semiconductor Corporation FDG8842CZ Rev.B Device FDG8842CZ Reel Size 7" 1 Tape Width 8mm Quantity 3000 units www.fairchildsemi.com FDG8842CZ Complementary PowerTrench(R) MOSFET April 2007 Symbol Parameter Test Conditions Type Min 30 -25 Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250A, VGS = 0V ID = -250A, VGS = 0V Q1 Q2 BVDSS TJ Breakdown Voltage Temperature Coefficient ID = 250A, referenced to 25C ID = -250A, referenced to 25C Q1 Q2 IDSS Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V VDS = -20V, VGS = 0V Q1 Q2 1 -1 A IGSS Gate to Source Leakage Current VGS = 12V, VDS= 0V VGS = -8V, VDS= 0V Q1 Q2 10 -100 A nA 1.5 -1.5 V V 25 -21 mV/C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250A VGS = VDS, ID = -250A Q1 Q2 VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250A, referenced to 25C ID = -250A, referenced to 25C Q1 Q2 -3.0 1.8 VGS = 4.5V, ID = 0.75A VGS = 2.7V, ID = 0.67A VGS = 4.5V, ID = 0.75A ,TJ = 125C Q1 0.25 0.29 0.36 0.4 0.5 0.6 VGS = -4.5V, ID = -0.41A VGS = -2.7V, ID = -0.25A VGS = -4.5V, ID = -0.41A ,TJ = 125C Q2 0.87 1.20 1.22 1.1 1.5 1.9 VDS = 5V, ID = 0.75A VDS = -5V, ID = -0.41A Q1 Q2 3 8 Q1 VDS = 10V, VGS = 0V, f= 1MHZ Q2 VDS = -10V, VGS = 0V, f= 1MHZ Q1 Q2 90 70 120 100 pF Q1 Q2 20 30 30 40 pF Q1 Q2 15 15 25 25 pF Q1 Q2 4 6 10 12 ns Q1 Q2 1 16 10 29 ns Q1 Q2 9 35 18 56 ns Q1 Q2 1 40 10 64 ns Q1 Q2 1.03 1.20 1.44 1.68 nC Q1 Q2 0.29 0.31 nC Q1 Q2 0.17 0.22 nC rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance 0.65 -0.65 1.0 -0.8 mV/C S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics (note 2) td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain "Miller" Charge (c)2007 Fairchild Semiconductor Corporation FDG8842CZ Rev.B Q1 VDD = 5V, ID = 0.5A, VGS = 4.5V,RGEN = 6 Q2 VDD = -5V, ID = -0.5A, VGS = -4.5V,RGEN = 6 Q1 VGS =4.5V, VDD = 5V, ID = 0.75A Q2 VGS = -4.5V, VDD = -5V, ID = -0.41A 2 www.fairchildsemi.com FDG8842CZ Complementary PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units 0.3 -0.3 A 1.2 -1.2 V Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 0.3A VGS = 0V, IS = -0.3A Q1 Q2 (Note 2) (Note 2) Q1 Q2 0.76 -0.84 Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. a. 350C/W when mounted on a 1 in2 pad of 2 oz copper . b. 415C/W when mounted on a minimum pad of 2 oz copper. Scale 1:1 on letter size paper. 2. Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. (c)2007 Fairchild Semiconductor Corporation FDG8842CZ Rev.B 3 www.fairchildsemi.com FDG8842CZ Complementary PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted 2.6 VGS = 4.5V VGS = 2.7V VGS = 2.0V 1.76 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.20 1.32 VGS =1.8V 0.88 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 0.44 0.00 0.0 VGS = 1.5V 0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0 VGS = 1.8V 2.2 1.8 VGS = 3.5V 1.4 VGS = 2.7V 1.0 0.6 0.00 0.44 0.88 1.32 1.76 2.20 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 0.8 1.6 rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -50 SOURCE ON-RESISTANCE () ID =0.38A ID = 0.75A VGS = 4.5V TJ = 125oC 0.4 TJ = 25oC 0.2 -25 0 25 50 75 100 125 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 0.6 150 1 2 TJ, JUNCTION TEMPERATURE (oC) 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On - Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 2.20 2 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 1.76 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 4.5V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 2.0V VDD = 5V 1.32 TJ = 150oC 0.88 TJ = 25oC 0.44 0.00 0.0 TJ = -55oC 0.5 1.0 1.5 2.0 VGS, GATE TO SOURCE VOLTAGE (V) VGS = 0V TJ = 150oC 0.1 TJ = 25oC 0.01 TJ = -55oC 0.001 0.2 2.5 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics (c)2007 Fairchild Semiconductor Corporation FDG8842CZ Rev.B 1 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 4 www.fairchildsemi.com FDG8842CZ Complementary PowerTrench(R) MOSFET Typical Characteristics (Q1 N-Channel)TJ = 25C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 5 200 ID = 0.22A Ciss 100 3 VDD = 5V 2 CAPACITANCE (pF) 4 VDD = 10V VDD = 15V Coss 10 1 f = 1MHz VGS = 0V 0 0.0 0.2 0.4 0.6 0.8 1.0 Qg, GATE CHARGE(nC) 1.2 1 0.1 1.4 1 Figure 8. Capacitance vs Drain to Source Voltage 50 4 r DS n) (o ED P(PK), PEAK TRANSIENT POWER (W) 1 T MI LI 100s 1ms 10ms 0.1 SINGLE PULSE TJ = MAX RATED 100ms RJA = 415OC/W 0.01 1s DC TA = 25OC 0.005 0.1 1 30 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics ID, DRAIN CURRENT (A) Crss 10 100 SINGLE PULSE RJA = 415OC/W TA = 25OC 10 1 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t, PULSE WIDTH (s) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA o RJA = 415 C/W SINGLE PULSE 0.0001 0.001 0.01 0.1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (s) Figure 11. (c)2007 Fairchild Semiconductor Corporation FDG8842CZ Rev.B Transient Thermal Response Curve 5 www.fairchildsemi.com FDG8842CZ Complementary PowerTrench(R) MOSFET Typical Characteristics (Q1 N-Channel)TJ = 25C unless otherwise noted 5 VGS = -3.5V VGS = -4.5V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 1.2 VGS = -2.7V 0.9 VGS = -2.5V 0.6 VGS = -2.0V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 0.3 VGS = -1.5V 0.0 0 1 2 3 4 4 VGS = -2.0V VGS = -2.7V 2 VGS = -3.5V 1 VGS = -4.5V 0 0.0 0.3 -VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.0 0.8 -25 0 25 50 75 100 125 SOURCE ON-RESISTANCE () NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.2 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX ID =-0.22A 3 2 TJ = 125oC 1 TJ = 25oC 0 1.5 150 TJ, JUNCTION TEMPERATURE (oC) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 16. On-Resistance vs Gate to Source Voltage Figure 15. Normalized On Resistance vs Junction Temperature 0.6 3 VDS = -5V -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX -ID, DRAIN CURRENT (A) 0.9 4 ID = -0.41A VGS = -4.5V 1.2 TJ = -55oC TJ = 150oC 0.4 TJ = 25oC 0.2 0.0 0.5 0.6 Figure 14. Normalized on-Resistance vs Drain Current and Gate Voltage 1.6 0.6 -50 VGS = -2.5V 3 -ID, DRAIN CURRENT(A) Figure 13. On Region Characteristics 1.4 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = -1.5V 1.0 1.5 2.0 TJ = 150oC 0.1 TJ = 25oC 0.01 TJ = -55oC 0.001 0.2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 17. Transfer Characteristics (c)2007 Fairchild Semiconductor Corporation FDG8842CZ Rev.B VGS = 0V 1 Figure 18. Source to Drain Diode Forward Voltage vs Source Current 6 www.fairchildsemi.com FDG8842CZ Complementary PowerTrench(R) MOSFET Typical Characteristics (Q2 P-Channel)TJ = 25C unless otherwise noted 5 200 -VGS, GATE TO SOURCE VOLTAGE(V) ID = -0.41A Ciss 100 VDD = -5V 3 CAPACITANCE (pF) 4 VDD = -10V VDD = -15V 2 Coss 10 Crss 1 f = 1MHz VGS = 0V 0 0.0 0.4 0.8 1.2 1 0.1 1.6 Qg, GATE CHARGE(nC) 20 r DS( ) on IT LIM P(PK), PEAK TRANSIENT POWER (W) -ID, DRAIN CURRENT (A) 3 1 ED 1ms 10ms 0.1 SINGLE PULSE TJ = MAX RATED RJA = 415oC/W 100ms TA = 25oC 1s DC 1 0.3 50 10 25 10 Figure 20. Capacitance vs Drain to Source Voltage Figure 19. Gate Charge Characteristics 0.01 1 -VDS, DRAIN TO SOURCE VOLTAGE (V) SINGLE PULSE RJA = 415OC/W 10 TA = 25OC 1 0.1 0.001 0.01 0.1 1 10 100 1000 t, PULSE WIDTH (s) -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 21. Forward Bias Safe Operating Area Figure 22. Single Pulse Maximum Power Dissipation 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA SINGLE PULSE 0.01 -3 10 o RJA = 415 C/W -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 23. Transient Thermal Response Curve (c)2007 Fairchild Semiconductor Corporation FDG8842CZ Rev.B 7 www.fairchildsemi.com FDG8842CZ Complementary PowerTrench(R) MOSFET Typical Characteristics(Q2 P-Channel) TJ = 25C unless otherwise noted TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Across the board. Around the worldTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM CTLTM Current Transfer LogicTM DOMETM E2CMOSTM EcoSPARK(R) EnSignaTM FACT Quiet SeriesTM FACT(R) FAST(R) FASTrTM FPSTM FRFET(R) GlobalOptoisolatorTM GTOTM HiSeCTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM MICROCOUPLERTM MicroPakTM MICROWIRETM Motion-SPMTM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANAR(R) PACMANTM PDP-SPMTM POPTM Power220(R) Power247(R) PowerEdgeTM PowerSaverTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM ScalarPumpTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM The Power Franchise(R) TM TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyWireTM TruTranslationTM SerDesTM UHC(R) UniFETTM VCXTM WireTM tm DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Definition Rev. I26 (c)2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FDG8842CZ Complementary PowerTrench(R) MOSFET tm ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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