1N5221C to 1N5267C
Document Number 84613
Rev. 1.0, 02-Sep-04
Vishay Semiconductors
www.vishay.com
1
94 9367
Small Signal Zener Diodes
Features
• Silicon Planar Power Zener Diodes.
• Standard Zener voltage tolerance is ± 2 %.
Applications
Voltage stabilization
Mechanical Data
Case: DO-35 Glass case
Weight: approx. 125 mg
Packaging codes/options:
TAP / 10 k per Ammopack (52 mm tape), 30 k/box
TR / 10 k per 13 " reel , 30 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Power dissipation TL ≤ 75 °C PV500 mW
Z-current IZPV/VZmA
Junction temperature Tj200 °C
Storage temperature range Tstg - 65 to + 200 °C
Parameter Test condition Symbol Value Unit
Junction ambient l = 9.5 mm (3/8 "), TL=constant RthJA 300 K/W
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage IF = 200 mA VF1.1 V
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Document Number 84613
Rev. 1.0, 02-Sep-04
1N5221C to 1N5267C
Vishay Semiconductors
Electrical Characteristics
1N5221C...1N5267C
Partnumber Nominal Zener
Voltage1)
Test Current Maximum
Dynamic
Impedance1)
Maximum
Dynamic
Impedance
Typical
Temperature of
Coeffizient
Maximum Reverse Leakage
Current
@ IZT, VZIZT ZZT @ IZT ZZK @ IZK =
0.25 mA
@ IZT IRVR
VmA Ω Ω α (%/K) µA V
1N5221C 2.4 20 30 1200 -0.085 100 1
1N5222C 2.5 20 30 1250 -0.085 100 1
1N5223C 2.7 20 30 1300 -0.080 75 1
1N5224C 2.8 20 30 1400 -0.080 75 1
1N5225C 3 20 29 1600 -0.075 50 1
1N5226C 3.3 20 28 1600 -0.070 25 1
1N5227C 3.6 20 24 1700 -0.065 15 1
1N5228C 3.9 20 23 1900 -0.060 10 1
1N5229C 4.3 20 22 2000 +0.055 5 1
1N5230C 4.7 20 19 1900 +0.030 5 2
1N5231C 5.1 20 17 1600 +0.030 5 2
1N5232C 5.6 20 11 1600 +0.038 5 3
1N5233C 6 20 7 1600 +0.038 5 3.5
1N5234C 6.2 20 7 1000 +0.045 5 4
1N5235C 6.8 20 5 750 +0.050 3 5
1N5236C 7.5 20 6 500 +0.058 3 6
1N5237C 8.2 20 8 500 +0.062 3 6.5
1N5238C 8.7 20 8 600 +0.065 3 6.5
1N5239C 9.1 20 10 600 +0.068 3 7
1N5240C 10 20 17 600 +0.075 3 8
1N5241C 11 20 22 600 +0.076 2 8.4
1N5242C 12 20 30 600 +0.077 1 9.1
1N5243C 13 9.5 13 600 +0.079 0.5 9.9
1N5244C 14 9 15 600 +0.082 0.1 10
1N5245C 15 8.5 16 600 +0.082 0.1 11
1N5246C 16 7.8 17 600 +0.083 0.1 12
1N5247C 17 7.4 19 600 +0.084 0.1 13
1N5248C 18 7 21 600 +0.085 0.1 14
1N5249C 19 6.6 23 600 +0.086 0.1 14
1N5250C 20 6.2 25 600 +0.086 0.1 15
1N5251C 22 5.6 29 600 +0.087 0.1 17
1N5252C 24 5.2 33 600 +0.088 0.1 18
1N5253C 25 5 35 600 +0.089 0.1 19
1N5254C 27 4.6 41 600 +0.090 0.1 21
1N5255C 28 4.5 44 600 +0.091 0.1 21
1N5256C 30 4.2 49 600 +0.091 0.1 23
1N5257C 33 3.8 58 700 +0.092 0.1 25
1N5258C 36 3.4 70 700 +0.093 0.1 27
1N5259C 39 3.2 80 800 +0.094 0.1 30
1N5260C 43 3 93 900 +0.095 0.1 33
1N5261C 47 2.7 105 1000 +0.095 0.1 36
1N5262C 51 2.5 125 1100 +0.096 0.1 39
1N5263C 56 2.2 150 1300 +0.096 0.1 43
1N5264C 60 2.1 170 1400 +0.097 0.1 46
1N5221C to 1N5267C
Document Number 84613
Rev. 1.0, 02-Sep-04
Vishay Semiconductors
www.vishay.com
3
1) Based on dc-measurement at thermal equilibrium; lead length = 9.5 (3/8 "); thermal resistance of heat sink = 30 K/W
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1N5265C 62 2 185 1400 +0.097 0.1 47
1N5266C 68 1.8 230 1600 +0.097 0.1 52
1N5267C 75 1.7 270 1700 +0.098 0.1 56
Partnumber Nominal Zener
Voltage1)
Test Current Maximum
Dynamic
Impedance1)
Maximum
Dynamic
Impedance
Typical
Temperature of
Coeffizient
Maximum Reverse Leakage
Current
@ IZT, VZIZT ZZT @ IZT ZZK @ IZK =
0.25 mA
@ IZT IRVR
VmA Ω Ω α (%/K) µA V
Figure 1. Thermal Resistance vs. Lead Length
Figure 2. Typical Change of Working Voltage under Operating
Conditions at Tamb=25°C
95 9611
0 5 10 15
0
100
200
300
400
500
20
R –Therm.Resist.Junction/ Ambient ( K/W)
thJA
l – Lead Length ( mm )
ll
TL=constant
0 5 10 15 20
1
10
100
1000
V –VoltageChange( mV )
Z
VZ– Z-Voltage(V)
25
95 9598
IZ=5mA
Tj=25°C
Figure 3. Typical Change of Working Voltage vs. Junction
Temperature
Figure 4. Total Power Dissipation vs. Ambient Temperature
–60 0 60 120 180
0.8
0.9
1.0
1.1
1.2
1.3
V – RelativeVoltageChange
Ztn
Tj– Junction Temperature (°C )
240
95 9599
VZtn=VZt/VZ(25°C)
TK
VZ
=10 x 10
–4
/K
8x10
–4
/K
–4 x 10
–4
/K
6x10
–4
/K
4x10
–4
/K
2x10
–4
/K
–2 x 10
–4
/K
0
0 40 80 120 160
0
100
300
400
500
600
P –Total Power Dissipation ( mW)
tot
Tamb – Ambient Temperature(°C )
200
95 9602
200
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Document Number 84613
Rev. 1.0, 02-Sep-04
1N5221C to 1N5267C
Vishay Semiconductors
Figure 5. Temperature Coefficient of Vz vs. Z-Voltage
Figure 6. Diode Capacitance vs. Z-Voltage
Figure 7. Forward Current vs. Forward Voltage
0102030
–5
0
5
10
15
TK –Temperature Coefficient of V ( 10 /K)
VZ
VZ– Z-Voltage(V)
50
95 9600
40
Z–4
IZ=5mA
0 5 10 15
0
50
100
150
200
C – Diode Capacitance ( pF )
D
VZ– Z-Voltage(V)
25
95 9601
20
Tj=25°C
VR=2V
0 0.2 0.4 0.6 0.8
0.001
0.01
0.1
1
10
100
1.0
95 9605
I – Forward Current ( mA)
F
VF– Forward Voltage(V)
Tj=25°C
Figure 8. Z-Current vs. Z-Voltage
Figure 9. Z-Current vs. Z-Voltage
Figure 10. Differential Z-Resistance vs. Z-Voltage
04 81216
20
95 9604
0
20
40
60
80
100
I – Z-Current ( mA)
Z
VZ– Z-Voltage(V)
P
tot=500mW
Tamb
=25°C
15 20 25 30
0
10
20
30
40
50
I – Z-Current ( mA)
Z
VZ– Z-Voltage(V)
35
95 9607
P
tot=500mW
Tamb
=25°C
0 5 10 15 20
1
10
100
1000
r – Differential Z-Resistance ( Ω)
Z
VZ– Z-Voltage(V)
25
95 9606
Tj=25°C
IZ=1mA
5mA
10mA
1N5221C to 1N5267C
Document Number 84613
Rev. 1.0, 02-Sep-04
Vishay Semiconductors
www.vishay.com
5
Package Dimensions in mm (Inches)
Figure 11. Thermal Response
1
10
100
1000
Z –ThermalResistancefor PulseCond.(K/W
)
thp
tp– Pulse Length ( ms )
95 9603
10–1 100101102
tp/T=0.5
tp/T=0.2
tp/T=0.1
tp/T=0.05
tp/T=0.02
tp/T=0.01
Single Pulse RthJA
=300K/W
T=Tjmax–Tamb
iZM=(–VZ+(VZ2+4rzj T/Zthp)1/2)/(2rzj)
x
Cathode Identification
∅2.0 (0.08) max.
∅0.55 (0.02) max.
3.9 (0.15) max.26 (1.02) min.
94 9366
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35 26 (1.02) min.
ISO Method E
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Document Number 84613
Rev. 1.0, 02-Sep-04
1N5221C to 1N5267C
Vishay Semiconductors
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It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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