MA4P604-255 - M/A-COM Technology Solutions

Packaged PIN Diodes - ODS-255 Case Style M/A-COM Products

Rev. V3

MA4P202,303,504,505,506 & 604

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macom.com for additional data sheets and product information.

MA-COM Technical Solutions and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice.

ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions is

considering for development. Performance is based on target specifications, simulated results, and/

or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical Solutions

has under development. Performance is based on engineering tests. Specifications are typical.

Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commit-

ment to produce in volume is not guaranteed.

Features

• High Power PIN Diodes

• Fast Speed PIN Diodes

• Voltage Ratings to 1000 Volts

• Long Carrier Lifetime Desi gns

• High Reliability for Space/Military Applications

Description and Applications

MA-COM's product line of packaged PIN diodes

represents a comprehensive combination of PIN

diode electrical characteristics and package outlines.

This union of semiconductor and packaging technol-

ogy gives considerable design flexibility to the PIN

diode circuit designer. The fast switching speed PIN

diodes utilize thin I-region silicon dioxide passivated

chips that incorporate careful control of semiconduc-

tor processing. These diodes achieve consistent

performance in control circuit applications. The

packaged CERMACHIP PIN diodes employ MA-

COM's unique hard glass passivated, hermetically

sealed PIN diode chip. The packaged CERMACHIP

PIN diodes are designed for use in high power and

high RF voltage applications. The PIN diode chips

are bonded into hermetically sealed ceramic or glass

packages that are designed for high volume, close

tolerance utilization. Packages are available which

are suitable for mounting in a variety of microwave

and RF circuit media. The packaged silicon PIN di-

ode series has high inherent reliability and is capa-

ble of meeting stringent environmental tests. These

diodes may be ordered with testing to selected reli-

ability levels.

Absolute Maximum Ratings1

@ TA = +25 °C (unless otherwise specified)

1. Operation of this device above any one of these parameters

may cause permanent damage.

Parameter Absolution Max.

Voltage Voltage Rating

Operating Temperature - 65°C to +175°C

Storage Temperature -65°C to +200°C

Max Power Dissipation Pdiss =

T (max Operating)-25C

Thermal Resistance

Dimension INCHES MM

A 0.077 0.083 1.96 2.11

B 0.054 0.063 1.37 1.6

Part Number

Minimum Reverse

Voltage

VR @-10μA (VDC)

Maximum

Junction

Capacitance (pF)

Cj @ VR 1 MHz (pF)

Maximum

Series

Resistance

( Ω )

Nominal Characteristics

Carrier Lifetime TL

I Region

Thickness (μm)

MA4P202-255 100 0.05 @10V 2.5 @ 10mA 200nsec 19

MA4P303-255 200 0.15 @ 10V 1.5 @ 10mA 300nsec 20

MA4P504-255 500 0.20 @ 100V 0.60 @ 100mA 1usec 50

MA4P505-255 500 0.35 @ 100V 0.45 @ 100mA 2 usec 50

MA4P506-255 500 0.70 @ 100V 0.30 @ 100mA 3usec 50

MA4P604-255 1000 0.30 @ 100V 1.00 @ 100mA 3usec 90

Electrical Specifications TA= +25 C