Packaged PIN Diodes - ODS-255 Case Style M/A-COM Products
Rev. V3
MA4P202,303,504,505,506 & 604
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
1
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions is
considering for development. Performance is based on target specifications, simulated results, and/
or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical Solutions
has under development. Performance is based on engineering tests. Specifications are typical.
Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commit-
ment to produce in volume is not guaranteed.
Features
• High Power PIN Diodes
• Fast Speed PIN Diodes
• Voltage Ratings to 1000 Volts
• Long Carrier Lifetime Desi gns
• High Reliability for Space/Military Applications
Description and Applications
MA-COM's product line of packaged PIN diodes
represents a comprehensive combination of PIN
diode electrical characteristics and package outlines.
This union of semiconductor and packaging technol-
ogy gives considerable design flexibility to the PIN
diode circuit designer. The fast switching speed PIN
diodes utilize thin I-region silicon dioxide passivated
chips that incorporate careful control of semiconduc-
tor processing. These diodes achieve consistent
performance in control circuit applications. The
packaged CERMACHIP PIN diodes employ MA-
COM's unique hard glass passivated, hermetically
sealed PIN diode chip. The packaged CERMACHIP
PIN diodes are designed for use in high power and
high RF voltage applications. The PIN diode chips
are bonded into hermetically sealed ceramic or glass
packages that are designed for high volume, close
tolerance utilization. Packages are available which
are suitable for mounting in a variety of microwave
and RF circuit media. The packaged silicon PIN di-
ode series has high inherent reliability and is capa-
ble of meeting stringent environmental tests. These
diodes may be ordered with testing to selected reli-
ability levels.
Absolute Maximum Ratings1
@ TA = +25 °C (unless otherwise specified)
1. Operation of this device above any one of these parameters
may cause permanent damage.
Parameter Absolution Max.
Voltage Voltage Rating
Operating Temperature - 65°C to +175°C
Storage Temperature -65°C to +200°C
Max Power Dissipation Pdiss =
T (max Operating)-25C
Thermal Resistance
Dimension INCHES MM
A 0.077 0.083 1.96 2.11
B 0.054 0.063 1.37 1.6
Part Number
Minimum Reverse
Voltage
VR @-10μA (VDC)
Maximum
Junction
Capacitance (pF)
Cj @ VR 1 MHz (pF)
Maximum
Series
Resistance
( Ω )
Nominal Characteristics
Carrier Lifetime TL
I Region
Thickness (μm)
MA4P202-255 100 0.05 @10V 2.5 @ 10mA 200nsec 19
MA4P303-255 200 0.15 @ 10V 1.5 @ 10mA 300nsec 20
MA4P504-255 500 0.20 @ 100V 0.60 @ 100mA 1usec 50
MA4P505-255 500 0.35 @ 100V 0.45 @ 100mA 2 usec 50
MA4P506-255 500 0.70 @ 100V 0.30 @ 100mA 3usec 50
MA4P604-255 1000 0.30 @ 100V 1.00 @ 100mA 3usec 90
Electrical Specifications TA= +25 C
