2SK4034
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ)
2SK4034
Switching Regulator, DC-DC Converter Applications
Motor Drive Applications
• Low drain-source ON-resistance: RDS (ON) = 4.2 mΩ(typ.)
• High forward transfer admittance: |Yfs| = 110 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 60 V)
• Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 60 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 60 V
Gate-source voltage VGSS ±20 V
DC (Note 1) ID 75
Drain current Pulse (t ≤ 1 ms)
(Note 1) IDP 300
A
Drain power dissipation (Tc = 25°C) PD 125 W
Single pulse avalanche energy
(Note 2)
EAS 322 mJ
Avalanche current IAR 75 A
Repetitive avalanche energy (Note 3) EAR 12.5 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case Rth (ch-c) 1.0 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 78 μH, RG = 25 Ω, IAR = 75 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
Note 4: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.)
are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/”Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC ⎯
JEITA SC-97
TOSHIBA 2-9F1B
Weight: 0.74 g (typ.)
Note: Use the S1 pin to return the gate
signal to source. Board traces should
be designed so the main current flows
to the S2 pin.
1
2
3
4
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2SK4034
2009-09-29
2
Electrical Characteristics (Note 5) (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA
Drain cut-off current IDSS V
DS = 60 V, VGS = 0 V ⎯ ⎯ 100 μA
V (BR) DSS ID = 10 mA, VGS = 0 V 60 ⎯ ⎯ V
Drain-source breakdown voltage
V (BR) DSX ID = 10 mA, VGS = -20 V 35 ⎯ ⎯ V
Gate threshold voltage Vth V
DS = 10 V, ID = 1 mA 1.5 ⎯ 2.5 V
VGS = 10 V, ID = 38 A ⎯ 4.2 5.8 mΩ
Drain-source ON-resistance RDS (ON)
VGS = 4.5 V, ID = 38 A ⎯ 5.5 10 mΩ
Forward transfer admittance |Yfs| VDS = 10 V, ID = 38 A 55 110 ⎯ S
Input capacitance Ciss ⎯ 12400 ⎯
Reverse transfer capacitance Crss ⎯ 410 ⎯
Output capacitance Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
⎯ 1100 ⎯
pF
Rise time tr ⎯ 15 ⎯
Turn-on time ton ⎯ 35 ⎯
Fall time tf ⎯ 45 ⎯
Switching time
Turn-off time toff
Duty ≤ 1%, tw = 10 μs ⎯ 250 ⎯
ns
Total gate charge
(gate-source plus gate-drain) Qg ⎯ 196 ⎯
Gate-source charge Qgs ⎯ 148 ⎯
Gate-drain (“miller”) charge Qgd
VDD ≈ 48 V, VGS = 10 V,
ID = 75 A
⎯ 48 ⎯
nC
Note 5: The S1 and S2 pins should be grounded together, except when measuring the switching time.
Source-Drain Ratings and Characteristics (Note 6) (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current (Note 1, Note 6) IDR1 ⎯ ⎯ ⎯ 75 A
Pulse drain reverse current (Note 1, Note 6) IDRP1 ⎯ ⎯ ⎯ 300 A
Continuous drain reverse current (Note 1, Note 6) IDR2 ⎯ ⎯ ⎯ 1 A
Pulse drain reverse current (Note 1, Note 6) IDRP2 ⎯ ⎯ ⎯ 4 A
Forward voltage (diode) VDS2F I
DR1 = 75 A, VGS = 0 V ⎯ ⎯ −1.5
V
Reverse recovery time trr ⎯ 70 ⎯ ns
Reverse recovery charge Qrr
IDR = 75 A, VGS = 0 V,
dIDR/dt = 50 A/μs ⎯ 77 ⎯ nC
Note 6: IDR1, IDRP1: Current flowing between the drain and S2 pins. Ensure that the S1 pin is left open.
IDR2, IDRP2: Current flowing between the drain and S1 pins. Ensure that the S2 pin is left open.
The S1 and S2 pins should be grounded together, unless otherwise noted.
Marking
RL = 0.79Ω
VDD
∼
−
30V
0 V
VGS 10 V
4.7 Ω
ID = 38 A
VOUT
K4034
Lot No.
Note 7
Part No.
(or abbreviation code)
Note 7: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental
matters such as the RoHS compatibility of Product. The RoHS is the Directive
2002/95/EC of the European Parliament and of the Council of 27 January 2003 on
the restriction of the use of certain hazardous substances in electrical and
electronic equipment.
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2SK4034
2009-09-29
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1
1 100 100010
VGS = 10 V
4.5
10
100
1
1000
1 10 1000100
100
10 25
100
Ta = −55°C
0
0.6
0.8
1
0 8 12 16 20
0.4
0.2
ID = 75 A
38
19
4
0
0 2 4 6
80
120
160
40
10
Ta =−55°C
25
100
8
0
200
40
120
80
160
10 5
23 4
VGS = 3.25 V
4.5
3.5
4.25
8
10
4.75
3.75
4
5
6
0
100
20
60
40
80
0.2 0 1
0.4 0.6 0.8
4.75
5
4.5
6
10
4.25
4
3.75
3.5
8
VGS = 3.25 V
Drain-source voltage VDS (V)
Gate-source voltage VGS (V)
VDS – VGS
Common source
Tc=25℃
Pulse test
Drain current ID (A)
RDS (ON) – ID
Drain-source ON-resistance
RDS (ON) (mΩ)
Common source
Tc=25℃
Pulse test
Drain-source voltage VDS (V)
ID – VDS
Drain Current ID (A)
Common source
Tc=25℃
Pulse test
Drain-source voltage VDS (V)
ID – VDS
Drain Current ID (A)
Common source
Tc=25℃
Pulse test
Gate-source voltage VGS (V)
ID – VGS
Drain Current ID (A)
Common source
VDS=10V
Pulse test
Drain current ID (A)
⎪Yfs⎪ – ID
Forward transfer admittance ⎪Yfs⎪ (S)
Common source
VDS=10V
Pulse test
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2SK4034
2009-09-29
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40
500
20
30
0
0
16
4
400
12
0
200 300 100
10
8
VDs = 48 V
VGS
VDS
12
24
50 20
0
1
3
−80 −40 0 40 80 120 160
2
5
4
100
1000
10000
0.1 1 100
Ciss
Coss
Crss
100000
10
0
1−0.4
1000
−1.2 −1.6 −2 −0.8
10
100
10
3
1
VGS = 0,−1 V
5
160 −40 0 40 80 120 −80
8
6
4
2
0
10
ID = 19,38,75A
19
38
VGS = 4.5 V
VGS = 10 V
ID = 75 A
12
Drain power dissipation PD (W)
Case temperature Tc (°C)
PD − Tc
Drain-source voltage VDS (V)
IDR – VDS
Drain reverse current IDR (A)
Common source
Tc=25℃
Pulse test
Drain-source voltage VDS (V)
Capacitance – VDS
Capacitance C (pF)
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Gate threshold voltage Vth (V)
Case temperature TC (°C)
Vth – Tc
Common source
VDS=10V
ID=1mA
Pulse test
Gate-source voltage VGS (V)
Dynamic input/output characteristics
Total gate charge Qg (nC)
Drain-source voltage VDS (V)
Common source
ID=75A
Tc=25℃
Pulse test
RDS (ON) – Tc
Drain−source ON-resistance
RDS (ON) (mΩ)
Case temperature Tc (°C)
150
30
90
60
120
0
0 80 120 16040
Common source
Tc=25℃
Pulse test
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2SK4034
2009-09-29
5
rth − tw
Pulse width tw (S)
Normalized transient thermal impedance
rth (t)/Rth (ch-c)
0.01
10 μ 100 μ 1 m 10 m 100 m 1 10
0.1
1
10
0.01
0.02
0.05
0.1
0.2
Duty = 0.5
Single Pulse
T
PDM
t
Duty = t/T
Rth (ch-c) = 1.0°C/W
EAS – Tch
Channel temperature (initial) Tch (°C)
Avalanche energy EAS (mJ)
RG = 25 Ω
VDD = 25 V, L = 78 μH ⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛
−
⋅⋅⋅= VDD
BVDSS
BVDSS
2
IL
2
1
ΕAS
Test circuit Wave form
IAR
BVDSS
VDD V
DS
0 V
15 V
Safe operating area
Drain-source voltage VDS (V)
Drain current ID (A)
0.3
0.1
3
30
300
1000
1 10 100
ID max (continuous)
ID max (pulsed) *
DC operation
Tc = 25°C
1 ms *
VDSS max
100
0.5
10
100 μs *
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.1
1
5
500
0
25
100
200
300
400
50 75 100 125 150
E
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2SK4034
2009-09-29
6
RESTRICTIONS ON PRODUCT USE
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in this document, and related hardware, software and systems (collectively “Product”) without notice.
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TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
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or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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