9 RADIATION RESISTANT TRANSISTORS CURRENT GAIN SATURATION VOLTAGES @ @ TYPE CASE Vego VcEo Vego hee Vee le Vets) VBEts) Ie NUMBER TYPE Vv Vv Vv MIN, t MAX. Vv A Vv Vv A 5 AMP RADIATION #7: 2N5527 TO-S 60 40 3.0 40 200 5.0 3.0 1.25 1.50 3.0 2N5531 TO-5 90 75 3.0 30 150 5.0 3.0 1.25 1.50 3.0 SDR2710 MT-27 60 40 3.0 40 5.0 3.0 1.00 1.50 3.0 SDR2712 MT-27 90 75 3.0 30 5.0 3.0 1.00 1.50 3.0 10 AMP RADIATIONS: 2N5528 TO-59* 60 40 3.0 40 200 5.0 3.0 1.25 1.50 3.0 2N5529 TO-61 60 40 3.0 40 200 5.0 3.0 1.25 1.50 3.0 2N5530 TO-61-I 60 40 3.0 40 200 5.0 3.0 1.25 1.50 3.0 2N5532 TO-59* 90 75 3.0 30 150 5.0 3.0 1.25 1.50 3.0 2N5533 TO-61 90 76 3.0 30 150 5.0 3.0 1.25 1.50 3.0 2N5534 TO-61-I 90 75 3.0 30 150 5.0 3.0 1.25 1.50 3.0 $DR2711 TO-60 60 40 3.0 40 5.0 3.0 1.00 1.50 3.0 SDR2713 TO-60 90 75 3.0 30 5.0 3.0 1.00 1.50 3.0 25 AMP RADIATION hrs 2N5535 TO-61 60 50 3.0 30 150 5.0 10.0 1.25 1.50 5.0 2N5536 TO-61-! 60 50 3.0 30 150 5.0 10.0 1.25 1.50 5.0 2N5537 TO-6' 90 75 3.0 20 150 5.0 10.0 1.25 1.50 5.0 2N5538 TO-61-I 90 75 3.0 20 150 5.0 10.0 1.25 1.50 5.0 $DR2720 TO-6' 60 50 3.0 60 5.0 10.0 1.00 1.50 10.0 SDR2721 TO-61-1 60 50 3.0 60 5.0 10.0 1.00 1.50 10.0 SDR2722 TO-61 90 75 3.0 60 5.0 10.0 1.00 1.50 10.0 SDR2723 TO-61-l 90 75 3.0 60 5.0 10.0 1.00 1.50 10.0 *Exception: TO-111 only QUALITY / RELIABILITY INFORMATION TABLE t MILITARY STANDARD TEST CAPABILITY TEST CATEGORY Altitude Dew Point Moisture Resistance Resistance to Solverits (Symbolization) Salt Atmosphere Seal, Gross Leak MIL-STD-202 All Conditions MIL-STD-750 All Conditions All Conditions All Conditions MIL-STD-883 All Conditions All Conditions Alt Conditions Ail Conditions All Conditions All Conditions All Gross Leak Conditions (Method 1071, Conditions c, OB, & F)t All Conditions All Gross Leak Conditions (Method 1014, Conditions C) Alt Gross Leak Conditions {Method 112A, Conditions A,B, and Procedure IV of Condition C. Method 104A Conditions A, B & C)t Solderability All Conditions Sotdering Heat Temperature Cycling AH Conditions All Conditions All Conditions Except: Method 1051 Condi- tionsD& E All Conditions All Conditions All Conditions Except: Method 107, Condi- tionsD&E All Conditions Ail Conditions Except: Method 1010, Condi- tions E& F Terminal Strength All Conditions (Lead integrity) Thermal Shock (Glass Strain) Acceleration, Sustai ted (Centrifuge) Shock (Mechanical) Vibration, Fatigue Vibration, Noise Vibration, Variable Frequency Seal, Fine Leak * X-Ray, Film All Conditions Conditions D, E & F All Conditions Only Method 112A Condition C, Procedure 111.B All Conditions All Conditions All Conditions All Conditions All Conditions All Conditions All Conditions Only Method 1071 Condition H only All Conditions All Conditions All Conditions All Conditions All Conditions All Conditions tltems in parenthesis are the gross leak test conditions performed by Environmental Laboratory. Exception to these particular methods not listed. TAlso perform vibration variabie frequency per MIL-STD-810B, Method 514.1, Procedures I, II, Hil, 'V, and VII. Omit paragraph 4.5.1.1, Resonant Search, and paragraph 4.5.1.2, Resonant Dwell for Electronic Components. * Radiographic inspection is performed in accordance with many other government and customer specifications. Before any new (agiograpnic specifications is acceptable for use as a test standard with Components Group, it must be approved by Environmental boratory.RADIATION RESISTANT 10 TRANSISTORS SAT. vour. PRE-RADIATION GAIN | POST-RADIATIONGAIN | @ ' TYPE B Ie hee | Mees) | 'c hee | Yee | 'c 1014 fT EL | NUMBER A Vv A Vv A n/cm? 5 AMP RADIATION furry 300 36.00 40 1 3 15 2 3 1 200.0 | 2R 2N5527 500 35.00 30 1 3 7 3 3 1 200.0 | 2R 2N5531 "300 23.00 40 1 3 15 2 3 1 200.0 | 2R SDR2710 500 23.00 30 1 3 7 3 3 1 200.0 | 2R SDR2712 10 AMP RADIATION fe 300 5.00 40 1 3 15 2 3 1 200.0 | 2R 2N5528 "300 5.00 40 1 3 15 2 3 1 200.0 | 2R 2N5529 "300 5.00 40 1 3 15 2 3 1 200.0 | 2R 2N5530 500 5.00 30 1 3 7 3 3 1 200.0 | 2R 2N5532 500 5.00 30 1 3 7 3 3 1 200.0 | 2R 2N5533 '500 5.00 30 1 3 7 3 3 1 200.0 | 2R 2N5534 300 5.00 40 1 3 15 2 3 1 200.0 | 2R SDR2711 500 5.00 30 1 3 7 3 3 1 200.0 | 2R SDR2713 25 AMP RADIATION I 1.000 3.50 50 1 5 15 2 5 1 150.0 | 3R 2N5535 1.000 3.50 50 1 5 15 2 5 1 150.0 | 3R 2N5536 1.000 3.50 40 1 5 410 3 5 1 150.0 | 3R 2N5537 1.000 3.50 40 1 5 10 3 5 1 150.0 | 3R 2N5538 2.000 2.00 60 1 10 15 2 10 1 6R SDR2720 2.000 2.00 60 1 10 15 2 10 1 6R SDR2721 2.000 2.00 60 1 10 10 3 10 1 6R DR2722 2.000 2.00 60 1 10 10 3 10 1 6R SDR2723 QUALITY / RELIABILITY INFORMATION TABLE I} OVERALL TEST CAPABILITY CAPABILITY 50-30,000 g (Standard) TEST Acceleration, Sustained (Centrifuge) Altitude (Barometric Pressure, Reduced) Dew Point Moisture Resistance Radiographic Inspection (X-Ray) ~65C to 150C 0C to 175F, 40% to 100% RH Film Resolution to 0.001 Inch, 150 KV-5 mA Sait Atmosphere/Spray 25C to 71C, Up to 20% Salt Sotution by Weight Seal Gross Leak >1 x 10, 150C, Flourocarbons, Mineral Oils, Ethylene Glycol Hydrostatic Pressure0-100 psig Sy mbolization (Resistance to Solvents) Shock (Mechanical) PULSE SHAPE-APPRO XIMATELY HALF-SINE 1,500 - 15,000 g @ 0.2 ms + 0.1 ms 1,000- 6,000g @ 0.3 ms + 0.1 ms 500 -10,000q @ 0.5.ms + 0.15 ms 500- 4,0009g @ 1ms+0.3 ms 500& 1,000g @ 1.5 ms +0.45 ms 1,800 94 @ 3 ms + 0.6 ms 50 - 100g @ 6 ms + 0.9 ms 50 - 200g @ 7 ms +1.05 ms 15 - 150g @ 11ms+1.65 ms Solderability/Soldering Up to 280C Temperature Cycling -75C to 200C Terminal Strength (Lead Integrity} Thermal Shock Vibration, Fatigue Vibration, Variable FACILITIES AND EQUIPMENT A. LIFE TEST AND BURN-IN FACILITIES -65C to 200C 10-100 Hz, 5-509 Velocity. 0-50 g (Standard) 450,000 ft. Simulated Altitude with T n=25C Capability Lead Fatigue, Tension, Stud Torque, Terminal Torque 5-2000 Hz as Limited by 1 inch DA and 60 inches/Second 1. Solitron Devices, Inc. is equipped with extensive facilities to provide life test and burn-in capabilities for germanium power transistors and silicon power transistors. 2. Facilities are available for a wide range of tests including: (a) Storage life testing up to 300C; (b) Voltage-temperature stress testing at both ambient and elevated temperature conditions; (c) Free-air operating for more than 9000 silicon power and germanium transistors; (d) Case temperature operating for 2000 silicon power transistors at dissipation levels up to 200 watts; {e) Intermittent operating at various cycle times and power levels. B. ENVIRONMENTAL FACILITIES 1. Test capabilities of the Environmental Laboratory are shown in two different ways. First, Military Standard Test Ca pability which lists capability per MIL-STD-202, MIL-STD-750, and MIL-51D-883 for each test category; and second, Overall Test Capability which lists capability limits and, where applicable, combined environment capability for each test category. 2. Laboratory capabilities required for performance of tests per MIL-STD-202, MIL-STD-750, and MIL-STD-883 are listed in Table |. Those tests which are noted as exceptions are beyond the capability of the Environmental Laboratory. 3. Laboratory capability limits, including limits of combined environments, are shown in Table 1! for each test category.