MAXIMUM RATINGS 33 (665 ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) 2N2218A anzzia | 2N2z19A 2N2218A,2N2219,A* Rating Symbol | 2N2222 | 2N2222A Unit * Collector-Emitter Voltage VcEO 30 40 Vde 2N2222,A Collector-Base Voltage VcBO 60 75 Vde 2N2218, A/2N221 9,A Emitter-Base Voltage VEBO 5.0 6.0 Vde CASE 79-04 Collector Current Continuous Ic 800 800 mAdc TO-39 (TO-205AD) 2N2218A STYLE 1 a Collector 2N2219,A | 2N2222,A Total Device Dissipation Pp 2 @ Tp = 28C 0.8 0.4 Watt Base Derate above 25C 4.57 2.28 mW/C 3 emit Total Device Dissipation Pp a @ Tr = 25C 3.0 1.2 Watts A/2N2222,A Derate above 25C 17.1 6.85 mWPC CASE 22-03 Operating and-Storage Junction Ty, Tstg -65 to +200 C TO-18 (TO-206AA) Temperature Range 3 STYLE 1 THERMAL CHARACTERISTICS an OND218A GENERAL PURPOSE Characteristic Symbol! | 2N2219,A | 2N2222,A | Unit TRANSISTORS Thermal Resistance, Junction to Ambient | Raja 219 437.5 C/W NPN SILICON Thermal Resistance, Junction to Case RaJc 58 145.8 CAW *2N2219A and 2N2222A are Motorola designated preferred devices. | Characteristic Symbol Min Max | Unit | OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO Vde {ic = 10 mAde, Ig = 0) Non-A Suffix 30 _ A-Suffix 40 Collector-Base Breakdown Voltage ViBRICBO Vde (Ic = 10 pAde, le = 0} Non-A Suffix 60 _ A-Suffix 75 _ Emitter-Base Breakdown Voltage VIBR)JEBO Vde (lg = 10 pAdc, Ic = 0) Non-A Suffix 5.0 _ A-Suffix 6.0 _ Collector Cutoff Current IcEx _ 10 nAdc (Vce = 60 Vde, VeBioff} = 3-0 Vdc) A-Suffix Collector Cutoff Current ICBO pAdc (Vcg = 50 Vde, Ig = 0) Non-A Suffix _ 0.01 (Vcg = 60 Vde, lp = 0) A-Suffix _ 0.01 (Vcg = 50 Vde, Ie = 0, Ta = 150C) Non-A Suffix _ 10 (Veg = 60 Vde, Ie = 0, Ta = 150C) A-Suffix _- 10 Emitter Cutoff Current lEBO _ 10 nAdc (Veg = 3.0 Vde, Ic = 0) A-Suffix Base Cutoff Current IBL _ 20 nAdc | _(Vce = 60 Vde, VeB(off) = 3.0 Vde) A-Suffix ON CHARACTERISTICS DC Current Gain hee _ (I = 0.1 mAde, Vcg = 10 Vde) 2N2218A 20 _ 2N2219,A, 2N2222,A 35 _ x {ic = 1.0 mAde, Voge = 10 Vde) 2N2218A 25 _ 2N2219,A, 2N2222,A 50 _ (Ic = 10 mAde, Veg = 10 Vde)(1) 2N2218A 35 _ 2N2219,A, 2N2222,A 75 _ {Ic = 10 mAde, VcE = 10 Vde, 2N221BA 16 _ Ta = 55C}(1) 2N2219,A, 2N2222,A 35 _ (I = 150 mAdc, Vce = 10 Vdel(1) 2N2218A 40 120 Lo 2N2219,A, 2N2222,A 100 300 Motorola Small-Signal Transistors, FETs and Diodes Device Data 3-132N2218A 2N2219,A 2N2222,A ELECTRICAL CHARACTERISTICS (continued) (Ta = 25C unless otherwise noted.) High Frequency Input Impedance (Ic = 20 mAdc, VcE = 20 Vde, f = 300 MHz) 2N2218A, 2N2219A 2N2222A Characteristic Symbol Min Max Unit (i = 150 mAdc, VcE = 1.0 Vde){1) 2N2218A 20 _ 2N2219,A, 2N2222,A 50 _ (I = 500 mAdc, VcE = 10 Vde){(1) 2N2219, 2N2222 30 _ 2N2218A 25 _ 2N2219A, 2N2222A 40 _ Collector-Emitter Saturation Voltage(1) VCE(sat) Vde (I = 150 mAde, lg = 15 mAdc) Non-A Suffix _ 0.4 A-Suffix _ 0.3 (l = 500 mAde, Ip = 50 mAdc) Non-A Suffix _ 1.6 A-Suffix _ 1.0 Base-Emitter Saturation Voltage(1) VBE(sat) Vde (Ic = 150 mAde, Ip = 15 mAdc) Non-A Suffix 0.6 1.3 A-Suffix 0.6 1.2 (I = 500 mAdc, Ig = 50 mAdc) Non-A Suffix _ 2.6 A-Suffix _ 2.0 SMALL-SIGNAL CHARACTERISTICS Current Gain Bandwidth Product(2) fr MHz (Ig = 20 mAdc, VcE = 20 Vde, f = 100 MHz) All Types, Except 250 =_ 2N2219A, 2N2222A 300 _ Output Capacitance(3) Cobo _ 8.0 pF (Vog = 10 Vde, Ie = 0, f = 1.0 MHz) Input Capacitance(3) Cibo pF (VER = 0.5 Vde, Ic = 0, f = 1.0 MHz) Non-A Suffix _ 30 A-Suffix _ 25 Input Impedance hje kohms (i = 1.0 mAdc, VcE = 10 Vdc, f = 1.0kHz} 2N2218A 1.0 3.5 2N2219A, 2N2222A 2.0 8.0 (Ic = 10 mAdc, VcE = 10 Vde, f = 1.0 kHz) 2N2218A 0.2 1.0 2N2219A, 2N2222A 0.25 1.25 Voltage Feedback Ratio re x 10-4 (ic = 1.0 mAdc, Vcg = 10 Vde, f = 1.0 kHz) 2N2218A 5.0 2N2219A, 2N2222A _ 8.0 (Ic = 10 mAdc, Voce = 10 Vde, f = 1.0 kHz) 2N2218A 2.5 2N2219A, 2N2222A _ 4.0 Small-Signal Current Gain hfe _ (ic = 1.0 mAdc, Voce = 10 Vde, f = 1.0kHz) 2N2218A 30 150 2N2219A, 2N2222A 50 300 (ic = 10 mAdc, Vce = 10 Vdc, f = 1.0 kHz) 2N2218A 50 300 2N2219A, 2N2222A 75 375 Output Admittance hoe pmhos (Ic = 1.0 mAdc, Vcg = 10 Vde, f = 1.0 kHz) 2N2218A 3.0 15 2N2219A, 2N2222A 5.0 35 (Ic = 10 mAdc, Vcg = 10 Vdc, f = 1.0 kHz) 2N2218A 10 100 2N2219A, 2N2222A 15 200 Collector Base Time Constant rb'Ce _ 150 ps (IE = 20 mAdc, Vcp = 20Vde, f = 31.8 MHz) A-Suffix Noise Figure NF _ 4.0 dB (ic = 100 pAdc, VcE = 10 Vde, Rg = 1.0 kohm, f = 1.0 kHz) 2N2222A Real Part of Common-Emitter Re(hje) _ 60 Ohms (1) Pulse Test: Pulse Width < 300 ys, Duty Cycle < 2.0%. (2) f7 is defined as the frequency at which |hfel extrapolates to unity. (3) 2N5581 and 2N5582 are Listed Cop and Ceb for these conditions and values. 3-14 Motorola Small-Signal Transistors, FETs and Diodes Device Data2N2218A 2N2219,A 2N2222,A ELECTRICAL CHARACTERISTICS (continued) (Ta = 25C unless otherwise noted.) Characteristic Symbol Min Max | Unit | SWITCHING CHARACTERISTICS Delay Time (Vcc = 30 Vdc, VBE(off) = ~0.5 Vde, ta _ 10 ns Rise Time Ic = 150 mAde, Igy = 18 mAdc) tr _ 25 ns (Figure 12) Storage Time (Vcc = 30 Vdc, lc = 150 mAde, : ts _ 225 ns i Ip1 = Ip2 = 15 mAdc) t 60 ns Fall Time (Figure 13) f Active Region Time Constant Ta _- 2.5 ns (I = 150 mAdc, Vee = 30 Vdc) (See Figure 11 for 2N2218A, 2N2219A, 2N2221A, 2N2222A) hfe, NORMALIZED DC CURRENT GAIN O05 0672 10 Vee, COLLECTOR-EMITTER VOLTAGE (VOLTS) a 1.0 2.0 Bol Br, FIGURE 1 - NORMALIZED DC CURRENT GAIN VcE*tOV Ty = 1759C Ves dv on, 20 3.0 5.0 10 20 30 50 70 100 200 300 500 Ic, COLLECTOR CURRENT (mA) FIGURE 2 - COLLECTOR CHARACTERISTICS IN SATURATION REGION This graph shows the effect of base current on collector current. Bo (current gain at the edge of saturation) is the current gain of the transistor at 1 volt, and &; (forced gain) is the ratio of Ic/1, in a circuit. EXAMPLE: For type 2N2219, estimate a base current (I) to insure saturation at a temperature of 25C and a collector current of 150 mA. Observe that at |. = 150 mA an overdrive factor of at least 2.5 is required to drive the transistor well into the saturation region. From Figure 1, it is seen that h,, @ 1 volt is approximately 0.62 of h.. @ 10 \ volts. Using the guaranteed minimum gain of 100 @ 150 mA and 10 V, Bo = 62 and substituting values in the overdrive equation, we find: Bo ba @ 1.0V __62_ ~ Be Wel hw 2.5= 150/ic 1.226.0 mA 3.0 4.0 5.0 OVERDRIVE FACTOR = Motorola Small-Signal Transistors, FETs and Diodes Device Data 3-152N2218A 2N2219,A 2N2222,A FIGURE 3 ON VOLTAGES Ty = 259C VBE(sat) @ Ic/Ip = 10 VBE @Vce=10V V, VOLTAGE (VOLTS) oy, TEMPE RATURE COEFFICIENT (mV/9C) VCE(sat) be/tg = 10 FIGURE 4 TEMPERATURE COEFFICIENTS +16 (25C to 1759C) +0.8 6vC for VCE(sat) (-55C to 25C) 0.8 -1.6 6yp for Vee -2.4 0.5 1.0 2.0 5.0 10 20 50 100 =. 200 500 0.5 1.0 2.0 5.0 10 20 50 100 = 200 500 Ig, COLLECTOR CURRENT (mA) Ic, COLLECTOR CURRENT (mA) h PARAMETERS Vce = 10 Vde, f = 1.0 kHz, Ta = 25C This group of graphs iflustrates the relationship between hfe and other h parameters for this series of transistors. To obtain these curves, a high-gain and a low-gain unit were selected and the same units were used to develop the correspondingly numbered curves on each graph. FIGURE 5 INPUT IMPEDANCE FIGURE 6 VOLTAGE FEEDBACK RATIO 20 50 ~e 3 a 10 3 = 70 = 2 = 2 ms 5.0 = = 30 x 10 e * 3 = 20 Bey z go 2 10 3 3.0 07 20 0.5 0.3 10 01 0.2 0.5 2.0 20 0.1 0.2 0.5 1.0 2.0 5.0 10 20 le, COLLECTOR CURRENT {mAdc] Ic, COLLECTOR CURRENT (mAde) FIGURE 7 CURRENT GAIN FIGURE 8 OUTPUT ADMITTANCE 300 200 200 3 100 5 = pars 3 * 8 50 = = 2 100 Ee a 5 : = 70 = 20 3 50 10 30 0.1 0.2 05 10 2.0 50 20 0.2 0.5 1.0 2.0 5.0 10 20 Ic, COLLECTOR CURRENT (mAde) Ic, COLLECTOR CURRENT (mAdc) 3-16 Motorola Sma!lSigna! Transistors, FETs and Diodes Device DataFIGURE 9 TURN-ON TIME 200 Ty = 25C Iglg = 10 100 Vec = 30V UNLESS NOTED tq @ VBE(otf 50 = 20V t, TIME (ns) 30 tg @ Veetotf) = 9 5.0 10 20 30 50 100 200 300 Ic, COLLECTOR CURRENT (mA) 300 200 lo/lpy = 10 100 70 50 le/ley = 20 lo/ Is: = 10 30 t,, ty, STORAGE AND FALL TIME (ns} 20 LOW GAIN TYPES Ty = 25C 10 10 20 30 50 70-100 200 300 Ic, COLLECTOR CURRENT (mA) FIGURE 12 DELAY AND RISE TIME EQUIVALENT TEST CIRCUIT GENERATOR RISE TIME < 2.0 ns PW < 200 ns DUTY CYCLE = 2.0% +30 V 200 OSCILLOSCOPE = Rin > 100 k ohms Cin = 12 pF RISE TIME < 5.0 ns 2N2218A 2N2219,A 2N2222,A SWITCHING TIME CHARACTERISTICS FIGURE 10 CHARGE DATA 10,000 T= 25C 3000 tally = 10 = SV (UNLESS NOTED) 2000 1000 , TOTAL CONTROL CHARGE 500 HIGH GAIN TYPES LOW NTY CHARGE (pC) 200 Veo = 30 1 Qa, ACTIVE REGION CHARGE ALL TYPES 30 50 7.0 10 2030 Ie, COLLECTOR CURRENT (mA) 50 70 100 200 300 FIGURE 11 TURN-OFF BEHAVIOR 300 200 100 70 50 Io/lg, = 10 30 t,, ty, STORAGE AND FALL TIME (ns) 20 HIGH GAIN TYPES Ty = 25C 20 30 30 7000 (100 200 =. 300 Ic, COLLECTOR CURRENT (mA) : FIGURE 13 STORAGE TIME AND FALL TIME EQUIVALENT TEST CIRCUIT DUTY CYCLE =2.0% +30 V ~= 100 ps < .0 ns 200 +16.2V 0 SCOPE Rin > 100 k ohms Cin < 12 pF RISE TIME < 5.0 ns -3.0V ~= 500 us Motorola Small-Signai Transistors, FETs and Diodes Device Data 3-17