Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through-the-board mounting. * * Convenient Plastic SOIC-8 Surface Mountable Package Style * Standard SOIC-8 Footprint, with 0.050 Lead Spacing * * Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering * * High Input-Output Isolation of 3000 Vac (rms) Guaranteed * * UL Recognized SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT File #E90700, Volume 2 Ordering Information: * * * To obtain MOC211, 212 and 213 in Tape and Reel, add R2 suffix to device numbers: R2 = 2500 units on 13 reel * To obtain MOC211, 212 and 213 in quantities of 50 (shipped in sleeves) -- No Suffix Marking Information: * * MOC211 = 211 * * MOC212 = 212 * * MOC213 = 213 Applications: * * General Purpose Switching Circuits * * Interfacing and coupling systems of different potentials and impedances * * Regulation Feedback Circuits * * Monitor and Detection Circuits SCHEMATIC MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Symbol Value INPUT LED Forward Current -- Continuous IF 60 mA IF(pk) 1.0 A Reverse Voltage VR 6.0 V LED Power Dissipation @ TA = 25C Derate above 25C PD 90 0.8 mW mW/C 30 V Forward Current -- Peak (PW = 100 m s, 120 pps) 1 8 2 7 3 6 4 5 Unit OUTPUT TRANSISTOR Collector-Emitter Voltage VCEO Collector-Base Voltage VCBO 70 V Emitter-Collector Voltage VECO 7.0 V Collector Current -- Continuous IC 150 mA Detector Power Dissipation @ TA = 25C Derate above 25C PD 150 1.76 mW mW/C 1. 2. 3. 4. 5. 6. 7. 8. LED ANODE LED CATHODE NO CONNECTION NO CONNECTION EMITTER COLLECTOR BASE NO CONNECTION MOC211, MOC212, MOC213 MAXIMUM RATINGS -- continued (TA = 25C unless otherwise noted) Rating Symbol Value Unit VISO 3000 Vac(rms) Total Device Power Dissipation @ TA = 25C Derate above 25C PD 250 2.94 mW mW/C Ambient Operating Temperature Range(3) TA -45 to +100 C Tstg -45 to +125 C -- 260 C TOTAL DEVICE Input-Output Isolation Voltage(1,2) (60 Hz, 1.0 sec. duration) Storage Temperature Range(3) Lead Soldering Temperature (1/16 from case, 10 sec. duration) ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)(4) Symbol Min Typ(4) Max Unit -- 1.15 1.5 V Reverse Leakage Current (VR = 6.0 V) VF IR -- 0.1 100 A Capacitance C -- 18 -- pF ICEO1 ICEO2 -- 1.0 50 nA -- 1.0 -- m A V(BR)CEO V(BR)ECO 30 90 -- V 7.0 7.8 -- V CCE -- 7.0 -- pF IC (CTR)(5) 2.0 (20) 5.0 (50) 10 (100) 6.5 (65) 9.0 (90) 14 (140) -- -- -- mA (%) VCE(sat) ton -- 0.15 0.4 V -- 7.5 -- m s -- 5.7 -- m s Rise Time (IC = 2.0 mA, VCC = 10 V, RL = 100 W ) toff tr -- 3.2 -- m s Fall Time (IC = 2.0 mA, VCC = 10 V, RL = 100 W ) tf -- 4.7 -- m s VISO RISO CISO 3000 1011 -- -- Vac(rms) -- -- W -- 0.2 -- pF Characteristic INPUT LED Forward Voltage (IF = 10 mA) OUTPUT TRANSISTOR Collector-Emitter Dark Current (VCE = 10 V, TA = 25C) (VCE = 10 V, TA = 100C) Collector-Emitter Breakdown Voltage (IC = 100 m A) Emitter-Collector Breakdown Voltage (IE = 100 m A) Collector-Emitter Capacitance (f = 1.0 MHz, VCE = 0) COUPLED Output Collector Current (IF = 10 mA, VCE = 10 V) MOC211 MOC212 MOC213 Collector-Emitter Saturation Voltage (IC = 2.0 mA, IF = 10 mA) Turn-On Time (IC = 2.0 mA, VCC = 10 V, RL = 100 W ) Turn-Off Time (IC = 2.0 mA, VCC = 10 V, RL = 100 W ) Input-Output Isolation Voltage (f = 60 Hz, t = 1.0 sec.)(1,2) Isolation Resistance (VI-O = 500 V)(2) Isolation Capacitance (VI-O = 0, f = 1.0 MHz)(2) 1. 2. 3. 4. 5. Input-Output Isolation Voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and pins 5, 6 and 7 are common. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions. Always design to the specified minimum/maximum electrical limits (where applicable). Current Transfer Ratio (CTR) = IC/IF x 100%. MOC211, MOC212, MOC213 VF , FORWARD VOLTAGE (VOLTS) 2 PULSE ONLY PULSE OR DC 1.8 1.6 1.4 TA = - 45C 1.2 25C 1 100C 1 10 100 IF, LED FORWARD CURRENT (mA) 1000 IC, OUTPUT COLLECTOR CURRENT (NORMALIZED) TYPICAL CHARACTERISTICS 10 NORMALIZED TO: IF = 10 mA 1 0.1 0.01 I C, OUTPUT COLLECTOR CURRENT (mA) 16 14 IF = 10 mA 12 MOC213 10 8 MOC212 6 MOC211 4 2 0 1 2 3 4 5 6 7 8 9 10 50 10 NORMALIZED TO: TA = 25C 1 0.1 -60 -40 -20 0 20 40 60 80 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) TA, AMBIENT TEMPERATURE (C) Figure 3. Output Current versus Collector-Emitter Voltage Figure 4. Output Current versus Ambient Temperature 100 120 20 18 NORMALIZED TO: VCE = 10 V TA = 25C 100 C, CAPACITANCE (pF) ICEO, COLLECTOR-EMITTER DARK CURRENT (NORMALIZED) 0 1 2 5 10 20 IF, LED INPUT CURRENT (mA) Figure 2. Output Current versus Input Current I C, OUTPUT COLLECTOR CURRENT (NORMALIZED) Figure 1. LED Forward Voltage versus Forward Current 0.5 10 VCE = 30 V 1 10 V 20 f = 1 MHz 16 14 12 10 8 CCE 6 4 0.1 0 CLED 40 60 80 TA, AMBIENT TEMPERATURE (C) 100 Figure 5. Dark Current versus Ambient Temperature 2 0.01 0.1 1 V, VOLTAGE (VOLTS) 10 Figure 6. Capacitance versus Voltage 100 MOC211, MOC212, MOC213 PACKAGE DIMENSIONS -A- 8 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 5 K B 1 4 D 8 PL 0.13 (0.005) G -T- SEATING PLANE M C 0.038 (0.0015) H J T A M DIM A B C D G H J K INCHES MIN MAX 0.182 0.202 0.144 0.164 0.123 0.143 0.011 0.021 0.050 BSC 0.003 0.008 0.006 0.010 0.224 0.244 STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. MILLIMETERS MIN MAX 4.63 5.13 3.66 4.16 3.13 3.63 0.28 0.53 1.27 BSC 0.08 0.20 0.16 0.25 5.69 6.19 ANODE CATHODE NC NC EMITTER COLLECTOR BASE NC DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. www.fairchildsemi.com 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. (c) 2000 Fairchild Semiconductor Corporation