Transistor Output
These devices consist of a gallium arsenide infrared emitting diode optically
coupled to a monolithic silicon phototransistor detector, in a surface mountable,
small outline, plastic package. They are ideally suited for high density
applications, and eliminate the need for through–the–board mounting.
· • Convenient Plastic SOIC–8 Surface Mountable Package Style
•
Standard SOIC–8 Footprint, with
²
0.050
· • Compatible with Dual
Lead Spacing
Wave, Vapor Phase and IR Reflow Soldering
· • High Input–Output Isolation of 3000 Vac (rms) Guaranteed
· • UL Recognized File #E90700, Volume 2
Ordering Information:
· • To obtain MOC211, 212 and 213 in Tape and Reel, add R2 suffix to device numbers:
R2 = 2500 units on 13² reel
· • To obtain MOC211, 212 and 213 in quantities of 50 (shipped in sleeves) — No Suffix
Marking Information:
· • MOC211 = 211
· • MOC212 = 212
· • MOC213 = 213
Applications:
· • General Purpose Switching Circuits
· • Interfacing and coupling systems of different potentials and impedances
· • Regulation Feedback Circuits
· • Monitor and Detection Circuits
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
INPUT LED
Forward Current — Continuous IF60 mA
Forward Current — Peak (PW = 100 ms, 120 pps) IF(pk) 1.0 A
Reverse Voltage VR6.0 V
LED Power Dissipation @ TA = 25°C
Derate above 25°CPD90
0.8 mW
mW/°C
OUTPUT TRANSISTOR
Collector–Emitter Voltage VCEO 30 V
Collector–Base Voltage VCBO 70 V
Emitter–Collector Voltage VECO 7.0 V
Collector Current — Continuous IC150 mA
Detector Power Dissipation @ TA = 25°C
Derate above 25°CPD150
1.76 mW
mW/°C
SMALL OUTLINE
OPTOISOLATORS
TRANSISTOR OUTPUT
SCHEMATIC
1. LED ANODE
2. LED CATHODE
3. NO CONNECTION
4. NO CONNECTION
5. EMITTER
6. COLLECTOR
7. BASE
8. NO CONNECTION
1
2
3
8
6
5
4
7
MAXIMUM RATINGS — continued (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
TOTAL DEVICE
Input–Output Isolation Voltage(1,2)
(60 Hz, 1.0 sec. duration) VISO 3000 Vac(rms)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°CPD250
2.94 mW
mW/°C
Ambient Operating Temperature Range(3) TA–45 to +100 °C
Storage Temperature Range(3) Tstg –45 to +125 °C
Lead Soldering Temperature (1/16² from case, 10 sec. duration) — 260 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(4)
Characteristic Symbol Min Typ(4) Max Unit
INPUT LED
Forward Voltage (IF = 10 mA) VF— 1.15 1.5 V
Reverse Leakage Current (VR = 6.0 V) IR— 0.1 100 A
Capacitance C — 18 — pF
OUTPUT TRANSISTOR
Collector–Emitter Dark Current (VCE = 10 V, TA = 25°C) ICEO1 — 1.0 50 nA
(VCE = 10 V, TA = 100°C) ICEO2 — 1.0 — mA
Collector–Emitter Breakdown Voltage (IC = 100 mA) V(BR)CEO 30 90 — V
Emitter–Collector Breakdown Voltage (IE = 100 mA) V(BR)ECO 7.0 7.8 — V
Collector–Emitter Capacitance (f = 1.0 MHz, VCE = 0) CCE —7.0 — pF
COUPLED
Output Collector Current MOC211
(IF = 10 mA, VCE = 10 V) MOC212
MOC213
IC (CTR)(5) 2.0 (20)
5.0 (50)
10 (100)
6.5 (65)
9.0 (90)
14 (140)
—
—
—
mA (%)
Collector–Emitter Saturation Voltage (IC = 2.0 mA, IF = 10 mA) VCE(sat) — 0.15 0.4 V
Turn–On Time (IC = 2.0 mA, VCC = 10 V, RL = 100 W) ton —7.5 — ms
Turn–Off Time (IC = 2.0 mA, VCC = 10 V, RL = 100 W) toff —5.7 — ms
Rise Time (IC = 2.0 mA, VCC = 10 V, RL = 100 W) tr— 3.2 — ms
Fall Time (IC = 2.0 mA, VCC = 10 V, RL = 100 W) tf— 4.7 — ms
Input–Output Isolation Voltage (f = 60 Hz, t = 1.0 sec.)(1,2) VISO 3000 — — Vac(rms)
Isolation Resistance (VI–O = 500 V)(2) RISO 1011 — — W
Isolation Capacitance (VI–O = 0, f = 1.0 MHz)(2) CISO —0.2 — pF
1. Input–Output Isolation Voltage, VISO, is an internal device dielectric breakdown rating.
2. For this test, pins 1 and 2 are common, and pins 5, 6 and 7 are common.
3. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
4. Always design to the specified minimum/maximum electrical limits (where applicable).
5. Current Transfer Ratio (CTR) = IC/IF x 100%.
MOC211, MOC212, MOC213
C
IF, LED INPUT CURRENT (mA) 5020105210.5
0.1
1
10
Figure 1. LED Forward Voltage versus Forward Current
IF, LED FORWARD CURRENT (mA)
101
2
0.01
1000100
1
1.2
1.4
1.6
1.8
Figure 2. Output Current versus Input Current
VF, FORWARD VOLTAGE (VOLTS)
I , OUTPUT COLLECTOR CURRENT (NORMALIZED)
PULSE ONLY
PULSE OR DC
TYPICAL CHARACTERISTICS
NORMALIZED TO:
IF = 10 mA
TA = –45
°
C
25
°
C
100
°
C
1001010.10.01
20
TA, AMBIENT TEMPERATURE (
°
C) 120100806040200–20–40–60
0.1
1
10
Figure 3. Output Current versus
Collector–Emitter Voltage
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 1098012 3456
16
7
0
2
4
6
8
10
12
14
18
16
14
12
10
8
6
4
V, VOLTAGE (VOLTS)
2
IC, OUTPUT COLLECTOR CURRENT (mA)
IC, OUTPUT COLLECTOR CURRENT (NORMALIZED)
C, CAPACITANCE (pF)
1
10
100
0.1 0 20 40 60 80 100
TA, AMBIENT TEMPERATURE (
°
C)
I
CEO, COLLECTOR–EMITTER DARK CURRENT
(NORMALIZED)
Figure 4. Output Current versus
Ambient Temperature
Figure 5. Dark Current versus Ambient Temperature Figure 6. Capacitance versus Voltage
NORMALIZED TO:
TA = 25
°
C
IF = 10 mA
MOC211
MOC213
NORMALIZED TO:
VCE = 10 V
TA = 25
°
C
VCE = 30 V
10 V
CLED
CCE
f = 1 MHz
MOC212
MOC211, MOC212, MOC213
PACKAGE DIMENSIONS
STYLE 1:
PIN 1. ANODE
2. CATHODE
3. NC
4. NC
5. EMITTER
6. COLLECTOR
7. BASE
8. NC
DIM
AMIN MAX MIN MAX
MILLIMETERS
0.182 0.202 4.63 5.13
INCHES
B0.144 0.164 3.66 4.16
C0.123 0.143 3.13 3.63
D0.011 0.021 0.28 0.53
G0.050 BSC 1.27 BSC
H0.003 0.008 0.08 0.20
J0.006 0.010 0.16 0.25
K0.224 0.244 5.69 6.19
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
B
K
D
G
8 PL
0.13 (0.005)
M
TA
M
J
H
C
SEATING
PLANE
0.038 (0.0015)
1
85
4
–A–
–T–
MOC211, MOC212, MOC213
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
www.fairchildsemi.com © 2000 Fairchild Semiconductor Corporation
