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Page <3> V1.029/04/13
Power Transistor
IC, Collector Current (Amp)
Figure - 3 Turn-On Time
t, Time (µs)
DC Current Gain
IC, Collector Current (Amp)
hFE, DC Current Gain
Turn-off Time
IC, Collector Current (Amp)
t, Time (µs)
Active Region Safe Operating Area
IC, Collector Current (Amp)
VCE, Collector−Emitter Voltage (Volts)
There are two limitation on the power ability of a transistor:
average junction temperature and second breakdown safe
operating area curves indicate IC-VCE limits of the transistor
that must be observed for reliable operation i.e., the transistor
must not be subjected to greater dissipation than curves
indicate.
The data of curve is base on TJ (PK) = 150°C; TC is variable
depending on power level. Second breakdown pulse limits
are valid for duty cycles to 10% provided TJ (PK) ≤150°C,
at high case temperatures, thermal limitation will reduce
the power that can be handled to less than the limitations
imposed by second breakdown.
RB and RC Varied to Obtain Desired Current Levels
D1 Must be Fast Recovery Type. eg:
M8D5000 Used Above IB to 100mA
MSD6100 Used Below IB to 100mA
Switching Time Test Circuit