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Page <1> V1.029/04/13
Power Transistor
Description:
Designed for use in general purpose power amplier and switching applications.
Features:
Collector-emitter sustaining voltage-VCEO (sus) = 60V (Min.)
Collector-emitter saturation voltage-VCE (sat) = 1.5V (Max.) at IC = 6A
Current gain-bandwidth product fT = 3MHz (Min.) at IC = 500mA
Maximum Ratings
Thermal Characteristics
Characteristic Symbol Max. Unit
Thermal Resistance Junction to Case Rθjc 1.92 °C/W
Characteristic Symbol TIP41A
TIP42A Unit
Collector-Emitter Voltage VCEO 60
VCollector-Base Voltage VCBO
Emitter-Base Voltage VEBO 5
Collector Current -Continuous
-Peak IC
6
10 A
Base Current IB2
Total Power Dissipation at TC = 25°C
Derate above 25°C PD
65
0.52
W
W/°C
Operation and Storage Junction Temperature Range TJ, TSTG -65 to +150 °C
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Power Transistor
Electrical Characteristics (TC = 25°C unless otherwise noted)
(1) Pulse Test: Pulse width ≤300μs, Duty Cycle ≤2%
(2) fT = hFE • fTEST
Characteristic Symbol Min. Max. Unit
OFF Characteristics
Collector-Emitter Sustaining Voltage (1)
IC = 30mA, IB = 0 TIP41A
TIP42A
VCEO(sus) 60 - V
Collector Cut off Current
VCE = 30V, IB = 0 TIP41A
TIP42A
ICEO - 0.7
mA
Collector Cut off Current
VCE = 60V, VEB = 0 TIP41A
TIP42A
ICES - 0.4
Emitter Cut off Current
VEB = 5V, IC = 0 IEBO -1
ON Characteristics (1)
DC Current Gain
IC = 0.3A, VCE = 4V
IC = 0.3A, VCE = 4V
hFE
30
15 75 -
Collector-Emitter Saturation Voltage
IC = 6A, IB = 600mA VCE(sat) - 1.5
V
Base-Emitter On Voltage
IC = 6A, VCE = 4V VBE(on) - 2
Dynamic Characteristics
Current Gain-Bandwidth Product (2)
IC = 500mA, VCE = 10V, fTEST = 1MHz fT3- MHz
Small Signal Current Gain
IC = 500mA, VCE = 10V, f = 1kHz hFE 20 - -
Power Derating
PD, Power Dissipation (Watts)
TC, Temperature (°C)
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Power Transistor
IC, Collector Current (Amp)
Figure - 3 Turn-On Time
t, Time (µs)
DC Current Gain
IC, Collector Current (Amp)
hFE, DC Current Gain
Turn-off Time
IC, Collector Current (Amp)
t, Time (µs)
Active Region Safe Operating Area
IC, Collector Current (Amp)
VCE, Collector−Emitter Voltage (Volts)
There are two limitation on the power ability of a transistor:
average junction temperature and second breakdown safe
operating area curves indicate IC-VCE limits of the transistor
that must be observed for reliable operation i.e., the transistor
must not be subjected to greater dissipation than curves
indicate.
The data of curve is base on TJ (PK) = 150°C; TC is variable
depending on power level. Second breakdown pulse limits
are valid for duty cycles to 10% provided TJ (PK) ≤150°C,
at high case temperatures, thermal limitation will reduce
the power that can be handled to less than the limitations
imposed by second breakdown.
RB and RC Varied to Obtain Desired Current Levels
D1 Must be Fast Recovery Type. eg:
M8D5000 Used Above IB to 100mA
MSD6100 Used Below IB to 100mA
Switching Time Test Circuit
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Power Transistor
Collector Saturation Region
IB, Base Current (mA)
VCE, Collector Voltage (Volts)
VR, Reverse Voltage (Volts)
Capacitances
C, Capacitance (pF)
“ON” Voltage
Voltage (Volts)
IC, Collector Current (Amp)
IC, Collector Current (μA)
Collector Cut off Region
VBE, Base-emitter Voltage (Volts)
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Power Transistor
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence.
Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Part Number Table
Description Part Number
Transistor, NPN, TO-220 TIP41A
Transistor, PNP, TO-220 TIP42A
Pin Conguration:
1. Base
2. Collector
3. Emitter
4. Collector(Case)
Dimensions : Millimetres
Dimensions Min. Max.
A14.68 15.31
B 9.78 10.42
C5.01 6.52
D13.06 14.62
E3.57 4.07
F2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.2 2.97
L 0.33 0.55
M 2.48 2.98
O3.7 3.9