MRF175GU - M/A-COM Technology Solutions

The RF MOSFET Line

200/150W, 500MHz, 28V

Rev. V1

MRF175GU

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

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Designed for broadband commercial and military applications using push

pull circuits at frequencies to 500 MHz. The high power, high gain and

broadband performance of these devices makes possible solid state

transmitters for FM broadcast or TV channel frequency bands.

N–Channel enhancement mode

 Guaranteed performance

MRF175GV @ 28 V, 225 MHz (―V‖ Suffix)

Output power — 200 W

Power gain — 14 dB typ

Efficiency — 65% typ`

 100% ruggedness tested at rated output power

 Low thermal resistance

 Low Crss — 20 pF typ @ VDS = 28 V

Product Image

CASE 375–04, STYLE 2

The RF MOSFET Line

200/150W, 500MHz, 28V

Rev. V1

MRF175GU

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

The RF MOSFET Line

200/150W, 500MHz, 28V

Rev. V1

MRF175GU

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

The RF MOSFET Line

200/150W, 500MHz, 28V

Rev. V1

MRF175GU

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

The RF MOSFET Line

200/150W, 500MHz, 28V

Rev. V1

MRF175GU

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

The RF MOSFET Line

200/150W, 500MHz, 28V

Rev. V1

MRF175GU

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

The RF MOSFET Line

200/150W, 500MHz, 28V

Rev. V1

MRF175GU

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

The RF MOSFET Line

200/150W, 500MHz, 28V

Rev. V1

MRF175GU

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

The RF MOSFET Line

200/150W, 500MHz, 28V

Rev. V1

MRF175GU

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

The RF MOSFET Line

200/150W, 500MHz, 28V

Rev. V1

MRF175GU

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

The RF MOSFET Line

200/150W, 500MHz, 28V

Rev. V1

MRF175GU

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

The RF MOSFET Line

200/150W, 500MHz, 28V

Rev. V1

MRF175GU

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

The RF MOSFET Line

200/150W, 500MHz, 28V

Rev. V1

MRF175GU

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

The RF MOSFET Line

200/150W, 500MHz, 28V

Rev. V1

MRF175GU

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

MOSFET CAPACITANCES

The physical structure of a MOSFET results in capacitors

between the terminals. The metal oxide gate structure de-

termines the capacitors from gate–to–drain (Cgd), and gate–

to–source (Cgs). The PN junction formed during the fabrica-

tion of the MOSFET results in a junction capacitance from

drain–to–source (Cds).

These capacitances are characterized as input (Ciss), out-

put (Coss) and reverse transfer (Crss) capacitances on data

sheets. The relationships between the inter–terminal ca-

pacitances and those given on data sheets are shown be-

low. The Ciss can be specified in two ways:

1. Drain shorted to source and positive voltage at the

gate.

2. Positive voltage of the drain in respect to source and

zerovolts at the gate. In the latter case the numbers are

lower. However, neither method represents the actual

operating conditions in RF applications.

The Ciss givenin the electrical characteristics table was

measured using method 2 above. It should be noted that

Ciss, Coss, Crss are measured at zero drain current and are

provided for general information about the device. They are

not RF design parameters and no attempt should be made

to use them as such.

LINEARITY AND GAIN CHARACTERISTICS

In addition to the typical IMD and power gain, data pre-

sented in Figure 3 may give the designer additional infor-

mation on the capabilities of this device. The graph repre-

sents the small signal unity current gain frequency at a

given drain current level. This is equivalent to fT for bipolar

transistors. Since this test is performed at a fast sweep

speed, heating of the device does not occur. Thus, in nor-

mal use, the highertemperatures may degrade these char-

acteristics to some extent.

DRAIN CHARACTERISTICS

One figure of merit for a FET is its static resistance in the

full–on condition. This on–resistance, VDS(on), occurs in the

linear region of the output characteristic and is specified

under specific test conditions for gate–source voltage and

drain

current. For MOSFETs, VDS(on) has a positive temperature

coefficient and constitutes an important design consideration

at high temperatures, because it contributes to the power

dissipation within the device.

GATE CHARACTERISTICS

The gate of the MOSFET is a polysilicon material, and is

electrically isolated from the source by a layer of oxide. The

input resistance is very high — on the order of 109 ohms —

resulting in a leakage current of a few nanoamperes.

Gate control is achieved by applying a positive voltage

slightly in excess of the gate–to–source threshold voltage,

VGS(th).

Gate Voltage Rating — Never exceed the gate voltage rat-

ing (or any of the maximum ratings on the front page). Ex-

ceeding the rated VGS can result in permanent damage to

the oxide layer in the gate region.

Gate Termination — The gates of this device are essen-

tially capacitors. Circuits that leave the gate open–circuited

or floating should be avoided. These conditions can result in

turn–on of the devices due to voltage build–up on the input

capacitor due to leakage currents or pickup.

Gate Protection — These devices do not have an internal

monolithic zener diode from gate–to–source. If gate protec-

tion is required, an external zener diode is recommended.

Using a resistor to keep the gate–to–source impedance

low also helps damp transients and serves another important

function. Voltage transients on the drain can be coupled to

the gate through the parasitic gate–drain capacitance. If the

gate–to–source impedance and the rate of voltage change

on the drain are both high, then the signal coupled to the

gate may be large enough to exceed the gate–threshold

voltage and turn the device on.

HANDLING CONSIDERATIONS

When shipping, the devices should be transported only in

antistatic bags or conductive foam. Upon removal from the

packaging, careful handling procedures should be adhered

to. Those handling the devices should wear grounding

straps and devices not in the antistatic packaging should be

kept in metal tote bins. MOSFETs should be handled by the

case and not by the leads, and when testing the device, all

leads should make good electrical contact before voltage is

applied. As a final note, when placing the FET into the sys-

tem it is designed for, soldering should be done with

grounded equipment.

DESIGN CONSIDERATIONS

The MRF175G is a RF power N–channel enhancement

mode field–effect transistor (FETs) designed for HF, VHF

and

RF POWER MOSFET CONSIDERATIONS

The RF MOSFET Line

200/150W, 500MHz, 28V

Rev. V1

MRF175GU

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

MOSFET CAPACITANCES

The physical structure of a MOSFET results in capacitors

between the terminals. The metal oxide gate structure de-

termines the capacitors from gate–to–drain (Cgd), and gate–

to–source (Cgs). The PN junction formed during the fabrica-

tion of the MOSFET results in a junction capacitance from

drain–to–source (Cds).

These capacitances are characterized as input (Ciss),

output (Coss) and reverse transfer (Crss) capacitances on

data sheets. The relationships between the inter–terminal

capacitances and those given on data sheets are shown

below. The Ciss can be specified in two ways:

1. Drain shorted to source and positive voltage at the

gate.

2. Positive voltage of the drain in respect to source

and zerovolts at the gate. In the latter case the

numbers are lower. However, neither method

represents the actual operating conditions in RF

applications.

The Ciss givenin the electrical characteristics table was

measured using method 2 above. It should be noted that-

Ciss, Coss, Crss are measured at zero drain current and are

provided for general information about the device. They are

not RF design parameters and no attempt should be made

to use them as such.

LINEARITY AND GAIN CHARACTERISTICS

In addition to the typical IMD and power gain, data pre-

sented in Figure 3 may give the designer additional infor-

mation on the capabilities of this device. The graph repre-

sents the small signal unity current gain frequency at a

given drain current level. This is equivalent to fT for bipolar

transistors. Since this test is performed at a fast sweep

speed, heating of the device does not occur. Thus, in nor-

mal use, the higher temperatures may degrade these char-

acteristics to some extent.

DRAIN CHARACTERISTICS

One figure of merit for a FET is its static resistance in the

full–on condition. This on–resistance, VDS(on), occurs in the

linear region of the output characteristic and is specified un-

der specific test conditions for gate–source voltage and drain

current. For MOSFETs, VDS(on) has a positive temperature

coefficient and constitutes an important design consideration

at high temperatures, because it contributes to the power

dissipation within the device.

GATE CHARACTERISTICS

The gate of the MOSFET is a polysilicon material, and is

electrically isolated from the source by a layer of oxide. The

input resistance is very high — on the order of 109 ohms —

resulting in a leakage current of a few nanoamperes. Gate

control is achieved by applying a positive voltage slightly in

excess of the gate–to–source threshold voltage, VGS(th).

Gate Voltage Rating — Never exceed the gate voltage rat-

ing (or any of the maximum ratings on the front page). Ex-

ceeding the rated VGS can result in permanent damage to

the oxide layer in the gate region.

Gate Termination — The gates of this device are essen-

tially capacitors. Circuits that leave the gate open–circuited

or floating should be avoided. These conditions can result in

turn–on of the devices due to voltage build–up on the input

capacitor due to leakage currents or pickup.

Gate Protection — These devices do not have an internal

monolithic zener diode from gate–to–source. If gate protec-

tion is required, an external zener diode is recommended.

Using a resistor to keep the gate–to–source impedance low

also helps damp transients and serves another important

function. Voltage transients on the drain can be coupled to

the gate through the parasitic gate–drain capacitance. If the

gate–to–source impedance and the rate of voltage change

on the drain are both high, then the signal coupled to the

gate may be large enough to exceed the gate–threshold

voltage and turn the device on.

HANDLING CONSIDERATIONS

When shipping, the devices should be transported only in

antistatic bags or conductive foam. Upon removal from the

packaging, careful handling procedures should be adhered

to. Those handling the devices should wear grounding

straps and devices not in the antistatic packaging should be

kept in metal tote bins. MOSFETs should be handled by the

case and not by the leads, and when testing the device, all

leads should make good electrical contact before voltage is

applied. As a final note, when placing the FET into the sys-

tem it is designed for, soldering should be done with

grounded equipment.

DESIGN CONSIDERATIONS

The MRF175G is a RF power N–channel enhancement

mode field–effect transistor (FETs) designed for HF, VHF

andUHF power amplifier applications. M/A-COM RF MOS-

FETs feature a vertical structure with a planar design. M/A-

RF POWER MOSFET CONSIDERATIONS

The RF MOSFET Line

200/150W, 500MHz, 28V

Rev. V1

MRF175GU

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

COM Application Note AN211A, FETs in Theory and Prac-

tice, is suggested reading for those not familiar with the con-

struction and characteristics of FETs.

The major advantages of RF power FETs include high

gain, low noise, simple bias systems, relative immunity from

thermal runaway, and the ability to withstand severely mis-

matched loads without suffering damage. Power output can

be varied over a wide range with a low power dc control sig-

nal.

DC BIAS

The MRF175G is an enhancement mode FET and, there-

fore, does not conduct when drain voltage is applied. Drain

current flows when a positive voltage is applied to the gate.

RF power FETs require forward bias for optimum perform-

ance. The value of quiescent drain current (IDQ) is not critical

for many applications. The MRF175G was characterized

at IDQ = 100 mA, each side, which is the suggested mini-

mumvalue of IDQ. For special applications such as linear

amplification, IDQ may have to be selected to optimize the

critical parameters. The gate is a dc open circuit and draws

no current. Therefore, the gate bias circuit may be just a

simple resistive divider network. Some applications may

require a more elaborate bias sytem.

GAIN CONTROL

Power output of the MRF175G may be controlled from its

rated value down to zero (negative gain) by varying the dc

gate voltage. This feature facilitates the design of manual

gain control, AGC/ALC and modulation systems.

The RF MOSFET Line

200/150W, 500MHz, 28V

Rev. V1

MRF175GU

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

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