VS-16CTQ...PbF Series, VS-16CTQ...-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 25-Aug-11 1Document Number: 94146
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Rectifier, 2 x 8 A
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
Package TO-220AB
IF(AV) 2 x 8 A
VR60 V, 80 V, 100 V
VF at IF0.58 V
IRM max. 7 mA at 125 °C
TJ max. 175 °C
Diode variation Common cathode
EAS 7.5 mJ
Anode
13
2
Base
common
cathode
2
Common
cathode
Anode
TO-220AB
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 16 A
VRRM 60 to 100 V
IFSM tp = 5 μs sine 850 A
VF8 Apk, TJ = 125 °C (per leg) 0.58 V
TJRange - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-
16CTQ060PbF
VS-
16CTQ060-N3
VS-
16CTQ080PbF
VS-
16CTQ080-N3
VS-
16CTQ100PbF
VS-
16CTQ100-N3 UNITS
Maximum DC
reverse voltage VR
60 60 80 80 100 100 V
Maximum working
peak reverse
voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
per leg
IF(AV) 50 % duty cycle at TC = 148 °C, rectangular waveform
8
A
per device 16
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
IFSM
5 µs sine or 3 µs rect. pulse Following any rated load
condition and with rated
VRRM applied
850
A
10 ms sine or 6 ms rect. pulse 275
Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 0.50 A, L = 60 mH 7.50 mJ
VS-16CTQ...PbF Series, VS-16CTQ...-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 25-Aug-11 2Document Number: 94146
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
Repetitive avalanche current per leg IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 0.50 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1 VFM (1)
8 A TJ = 25 °C 0.72
V
16 A 0.88
8 A TJ = 125 °C 0.58
16 A 0.69
Maximum reverse leakage current per leg
See fig. 2 IRM (1) TJ = 25 °C VR = rated VR
0.55 mA
TJ = 125 °C 7.0
Threshold voltage VF(TO) TJ = TJ maximum 0.415 V
Forward slope resistance rt11.07 m
Maximum junction capacitance per leg CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 500 pF
Typical series inductance per leg LSMeasured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/µs
ABSOLUTE MAXIMUM RATINGS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg - 55 to 175 °C
Maximum thermal resistance,
junction to case per leg RthJC
DC operation
3.25
°C/W
Maximum thermal resistance
junction to case per package RthJC 1.63
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.50
Approximate weight 2g
0.07 oz.
Mounting torque minimum 6 (5) kgf · cm
(lbf ·in)
maximum 12 (10)
Marking device Case style TO-220AB
16CTQ060
16CTQ080
16CTQ100
VS-16CTQ...PbF Series, VS-16CTQ...-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 25-Aug-11 3Document Number: 94146
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
1
10
02.51.0 1.5
VFM - Forward Voltage Drop (V)
IF - Instantaneous Forward Current (A)
100
0.5 2.0
1000
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
0.1
1
10
100
0.01
0.001
0
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
20 60 80 10040
0.0001
TJ = 175 °C
TJ = 150 °C
TJ = 50 °C
TJ = 75 °C
TJ = 100 °C
TJ = 125 °C
TJ = 25 °C
1000
0 40 100
100
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
TJ = 25 °C
20 60 80
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
10
VS-16CTQ...PbF Series, VS-16CTQ...-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 25-Aug-11 4Document Number: 94146
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR applied
100
014
IF(AV) - Average Forward Current (A)
Allowable Case Temperature (°C)
120
150
140
180
170
110
130
160
12108642
DC
Square wave (D = 0.50)
80 % rated VR applied
See note (1)
7
0
012
4
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
246810
1
2
3
5
6D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
RMS limit
1000
100 1000
tp - Square Wave Pulse Duration (µs)
IFSM - Non-Repetitive Surge Current (A)
100
10 00010
At any rated load condition
and with rated VRRM applied
following surge
Current
monitor
High-speed
switch
D.U.T.
Rg = 25 Ω
+
Freewheel
diode Vd = 25 V
L
IRFP460
40HFL40S02
VS-16CTQ...PbF Series, VS-16CTQ...-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 25-Aug-11 5Document Number: 94146
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-16CTQ060PbF 50 1000 Antistatic plastic tube
VS-16CTQ060-N3 50 1000 Antistatic plastic tube
VS-16CTQ080PbF 50 1000 Antistatic plastic tube
VS-16CTQ080-N3 50 1000 Antistatic plastic tube
VS-16CTQ100PbF 50 1000 Antistatic plastic tube
VS-16CTQ100-N3 50 1000 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95222
Part marking information TO-220AB PbF www.vishay.com/doc?95225
TO-220AB -N3 www.vishay.com/doc?95028
SPICE model www.vishay.com/doc?95279
Device code
62 43 5 7
16 C T Q 100 PbF
1
VS-
2- Current rating (16 = 16 A)
3- Circuit configuration
C = Common cathode
4- Package
T = TO-220
5- Schottky “Q” series
6- Voltage rating
7-
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
1-Vishay Semiconductors product
Environmental digit
060 = 60 V
080 = 80 V
100 = 100 V
Document Number: 95222 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 08-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TO-220AB
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and
E1
(7) Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
(8) Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183 E 10.11 10.51 0.398 0.414 3, 6
A1 1.14 1.40 0.045 0.055 E1 6.86 8.89 0.270 0.350 6
A2 2.56 2.92 0.101 0.115 E2 - 0.76 - 0.030 7
b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105
b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208
b2 1.20 1.73 0.047 0.068 H1 6.09 6.48 0.240 0.255 6, 7
b3 1.14 1.73 0.045 0.068 4 L 13.52 14.02 0.532 0.552
c 0.36 0.61 0.014 0.024 L1 3.32 3.82 0.131 0.150 2
c1 0.36 0.56 0.014 0.022 4 Ø P 3.54 3.73 0.139 0.147
D 14.85 15.25 0.585 0.600 3 Q 2.60 3.00 0.102 0.118
D1 8.38 9.02 0.330 0.355 90° to 93° 90° to 93°
D2 11.68 12.88 0.460 0.507 6
13
2
D
D1
H1
Q13
2
C
C
DD
3 x b23 x b
(b, b2)
b1, b3
(H1)
D2
Detail B
C
A
B
L
e1
Lead tip
E
E2
Ø P
0.014 AB
MM
0.015 AB
MM
Seating
plane
c
A2
A1
A
A
A
Lead assignments
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
Conforms to JEDEC outline TO-220AB
(6)
(6)
(7)
(6)
(7)
e
2 x
L1 (2)
Detail B
Section C - C and D - D
View A - A
Base metal Plating
(4)
(4)
c1
c
(6)
Thermal pad
(E)
E1 (6)
Legal Disclaimer Notice
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Revision: 13-Jun-16 1Document Number: 91000
Disclaimer
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including but not limited to the warranty expressed therein.
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16CTQ100GSTRRP VS-16CTQ100STRLPBF VS-16CTQ100STRRPBF VS-16CTQ080STRRPBF VS-
16CTQ060GPBF VS-16CTQ080GPBF VS-16CTQ100GPBF 16CTQ060G 16CTQ060G-1 16CTQ060GS
16CTQ060GSTRL 16CTQ060GSTRR 16CTQ080G 16CTQ080G-1 16CTQ080GS 16CTQ080GSTRL
16CTQ080GSTRR 16CTQ080S 16CTQ080STRL 16CTQ080STRR 16CTQ100G 16CTQ100GS 16CTQ100GSTRL
16CTQ100GSTRR 16CTQ100S 16CTQ100STRL 16CTQ100STRR VS-16CTQ060PBF VS-16CTQ080PBF VS-
16CTQ100PBF VS-16CTQ080STRLPBF VS-16CTQ100-N3
