SIEMENS BAT 165 Silicon Schottky Diode Preliminary data e Low-power Schottky rectifier diode e Miniature plastic package for surface mounting (SMD) { < N VPS05176 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BAT 165 White/C Q62702-A1190 1=C 2=A SOD-323 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage Va 40 V Forward current Ie 750 mA Average forward current (50/60Hz, sinus) leay 500 Surge forward current (t< 100s) lesm 2.5 A Total power dissipation, Ts = 66 C Prot 600 mw Junction temperature 7 150 C Storage temperature Tstq - 65 ...+150 Maximum Ratings Junction - ambient 1) Panga < 275 K/W Junction - soldering point IS < 140 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm /0.5cm2 Cu Semiconductor Group 1 1998-11-01SIEMENS BAT 165 Electrical Characteristics at T, = 25C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Reverse current Vea =30V 50 HA Reverse current Ve =30V, Ty = 65C 900 nA Forward voltage le =10mA lp = 100 mA Ip = 250 mA le = 750 mA 0.305 0.38 0.44 0.58 0.4 0.7 AC characteristics Diode capacitance Va =10V, f=1 MHz 8.4 12 pF Semiconductor Group 1998-11-01SIEMENS BAT 165 Forward current /- = f (T,*; Ts) * Package mounted on epoxy i | | mA Ts REN b- 500 MN \ \ \ 300 \ 200 \\ i \ 0 20 40 60 80 100 120 C 150 r Tals Permissible Pulse Load Rinjs = Ap) Permissible Pulse Load Emax / 4Fpc = Atp) 10? fFmax / IFDC FAithus 101 . 10 10 10 10 107% 10 s 10 10 10 10 10 10 s 10 Semiconductor Group 3 1998-11-01