RF & Protection Devices
Data Sheet
Revision 2.0, 2012-06-21
BFR740L3RH
Low Noise Silicon Germanium Bipolar RF Transistor
Edition 2012-06-21
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BFR740L3RH
Data Sheet 3 Revision 2.0, 2012-06-21
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,
thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
Revision History: 2012-06-21, Version 2
Page Subjects (major changes since last revision)
This data sheet replaces the revision from 2010-09-08. The production processes have not
been changed and the device properties remain the same. Only the product description has
been expanded and the characteristic curves taken with another test setup.
BFR740L3RH
Table of Contents
Data Sheet 4 Revision 2.0, 2012-06-21
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
6 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
7 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
7.1 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
7.2 General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
7.3 Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
7.4 Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
7.5 Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
8 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
9 Package Information TSLP-3-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Table of Contents
BFR740L3RH
List of Figures
Data Sheet 5 Revision 2.0, 2012-06-21
Figure 6-1 Total Power Dissipation Ptot =f(TS). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 7-1 BFR740L3RH Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 7-2 Collector Current vs. Collector Emitter Voltage IC=f(VCE), IB= Parameter in µA . . . . . . . . . . . . . 17
Figure 7-3 DC Current Gain hFE =f(IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 7-4 Collector Current vs. Base Emitter Forward Voltage IC=f(VBE), VCE = 2 V . . . . . . . . . . . . . . . . . 18
Figure 7-5 Base Current vs. Base Emitter Forward Voltage IB=f(VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 18
Figure 7-6 Base Current vs. Base Emitter Reverse Voltage IB=f(VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 19
Figure 7-7 Transition Frequency fT=f(IC), f= 2 GHz, VCE = Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 7-8 3rd Order Intercept Point at output OIP3=f(IC), ZS=ZL=50 Ω, VCE, f = Parameters . . . . . . . . . 20
Figure 7-9 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz . . . . . . . 21
Figure 7-10 Compression Point at output OP1dB [dBm] = f(IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz . . . . . . . . . . 21
Figure 7-11 Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 7-12 Gain Gma,Gms, |S21|2 = f (f), VCE = 3 V, IC = 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 7-13 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . 23
Figure 7-14 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 23
Figure 7-15 Input Matching S11 = f (f), VCE = 3 V, IC = 6 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 7-16 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 6 / 15 mA . . . . . . . . . . . 24
Figure 7-17 Output Matching S22 = f (f), VCE = 3 V, IC = 6 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 7-18 Noise Figure NFmin = f (f), VCE = 3 V, IC = 6 / 15 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 7-19 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . 26
Figure 7-20 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 26
Figure 9-1 Package Outline of TSLP-3-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 9-2 Footprint of TSLP-3-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 9-3 Marking Layout of TSLP-3-9. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 9-4 Tape of TSLP-3-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
List of Figures
BFR740L3RH
List of Tables
Data Sheet 6 Revision 2.0, 2012-06-21
Table 5-1 Maximum Ratings at TA = 25 °C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 6-1 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 7-1 DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 7-2 General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 7-3 AC Characteristics, VCE =3V, f= 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 7-4 AC Characteristics, VCE =3V, f= 0.45 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 7-5 AC Characteristics, VCE =3V, f= 0.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 7-6 AC Characteristics, VCE =3V, f= 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 7-7 AC Characteristics, VCE =3V, f= 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 7-8 AC Characteristics, VCE =3V, f= 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 7-9 AC Characteristics, VCE =3V, f= 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 7-10 AC Characteristics, VCE =3V, f= 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 7-11 AC Characteristics, VCE =3V, f= 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 7-12 AC Characteristics, VCE = 3 V, f = 12 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
List of Tables
BFR740L3RH
Product Brief
Data Sheet 7 Revision 2.0, 2012-06-21
1 Product Brief
The BFR740L3RH is a very low noise wideband NPN RF transistor. The device is based on Infineon’s reliable high
volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The BFR740L3RH provides a
transition frequency fT of 42 GHz and is suited for low voltage applications (VCEO,max = 4 V) from VHF to 12 GHz.
Due to its low power consumption the device is very energy efficient and well suited for mobile applications. The
BFR740L3RH is housed in a very thin small leadless package ideal for modules.
2 Features
3 Applications
As Low Noise Amplifier (LNA) in
• Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMAX 2.5/3.5/5.5 GHz, UWB,
Bluetooth
• Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and
C-band LNB
• Multimedia applications such as mobile/portable TV, CATV, FM Radio
• 3G/4G UMTS/LTE mobile phone applications
• ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, amplifier in VCOs and buffer amplifier
Attention: ESD (Electrostat ic discharge) sensitive device, observe handling precautions
• Very low noise figure NFmin = 0.5 dB at 1.9 GHz, 0.8 dB at
5.5 GHz, 3 V, 6 mA
• High power gain Gms = 20 dB at 5.5 GHz, 15 mA, 3 V
• Very thin small leadless package (height only 0.31 mm), hence
ideal for modules with compact size and low profile height
• Pb-free (RoHS compliant) and halogen-free package
• Qualification report according to AEC-Q101 available
TSLP-3-9
BFR740L3RH
Pin Configuration
Data Sheet 8 Revision 2.0, 2012-06-21
4 Pin Configuration
Product Name Package Pin Configuration1)
1)See “Package Information TSLP-3-9” on Page 28
Marking
BFR740L3RH TSLP-3-9 1 = B 2 = C 3 = E R9
BFR740L3RH
Maximum Ratings
Data Sheet 9 Revision 2.0, 2012-06-21
5 Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Table 5-1 Maximum Ratings at TA = 25 °C (unless otherwise specified)
Parameter Symbol Values Unit Note / Test Condition
Min. Max.
Collector emitter voltage VCEO
–
–
4.0
3.5
V Open base
TA = 25°C
TA = -55°C
Collector emitter voltage VCES – 13 V E-B short circuited
Collector base voltage VCBO – 13 V Open emitter
Emitter base voltage VEBO – 1.2 V Open collector
Collector current IC–40 mA–
Base current IB–4 mA–
Total power dissipation1)
1) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb.
Ptot –160mWTS ≤ 105 °C
Junction temperature TJ–150°C–
Storage temperature TStg -55 150 °C –
BFR740L3RH
Thermal Characteristics
Data Sheet 10 Revision 2.0, 2012-06-21
6 Thermal Characteristics
Figure 6-1 Total Power Dissipation Ptot =f(TS)
Table 6-1 Thermal Resistance
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Junction - soldering point1)
1)For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
RthJS –280–K/W–
0 25 50 75 100 125 150
0
20
40
60
80
100
120
140
160
180
TS [°C]
Ptot [mW]
BFR740L3RH
Electrical Characteristics
Data Sheet 11 Revision 2.0, 2012-06-21
7 Electrical Characteristics
7.1 DC Characteristics
7.2 General AC Characteristics
Table 7-1 DC Characteristics at TA = 25 °C
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Collector emitter breakdown voltage V(BR)CEO 44.7–VIC=1mA, IB=0
Open base
Collector emitter leakage current ICES –1
1
400
40
nA VCE =13 V, VBE =0
VCE =5 V, VBE =0
E-B short circuited
Collector base leakage current ICBO –140nAVCB =5V, IE=0
Open emitter
Emitter base leakage current IEBO –140nAVEB =0.5V, IC=0
Open collector
DC current gain hFE 160 250 400 VCE =3V, IC= 25 mA
Pulse measured
Table 7-2 General AC Characterist ic s at TA = 25 °C
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Transition frequency fT–47–GHzVCE =3V, IC=25mA
f=2 GHz
Collector base capacitance CCB – 0.09 0.12 pF VCB =3V, VBE =0
f=1MHz
Emitter grounded
Collector emitter capacitance CCE –0.3–pFVCE =3V, VBE =0
f=1MHz
Base grounded
Emitter base capacitance CEB –0.4–pFVEB =0.5V,VCB =0
f=1MHz
Collector grounded
BFR740L3RH
Electrical Characteristics
Data Sheet 12 Revision 2.0, 2012-06-21
7.3 Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias-T´s in a 50 Ω system, TA=25°C
Figure 7-1 BFR740L3RH Testing Circuit
Table 7-3 AC Characteristics, VCE =3V, f= 150 MHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
35
29.5
–
–
dB IC=15mA
IC=15mA
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.45
27.5
–
–
dB IC=6mA
IC=6mA
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
3.5
21
–
–
dBm ZS=ZL=50Ω
IC=15mA
IC=15mA
Table 7-4 AC Characteristics, VCE =3V, f=0.45GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
31
29
–
–
dB IC=15mA
IC=15mA
Bias -T
Bias -T
TSLP -3- 9 testing circuit
RF-
In
RF-
Out
VB
In
VC
Out
GND
12
3
BFR740L3RH
Electrical Characteristics
Data Sheet 13 Revision 2.0, 2012-06-21
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.45
26.5
–
–
dB IC=6mA
IC=6mA
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
7
21
–
–
dBm ZS=ZL=50Ω
IC=15mA
IC=15mA
Table 7-4 AC Characteristics, VCE =3V, f=0.45GHz (cont’d)
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
BFR740L3RH
Electrical Characteristics
Data Sheet 14 Revision 2.0, 2012-06-21
Table 7-5 AC Characteristics, VCE =3V, f=0.9GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
28
27
–
–
dB IC=15mA
IC=15mA
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.45
25
–
–
dB IC=6mA
IC=6mA
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
8
22.5
–
–
dBm ZS=ZL=50Ω
IC=15mA
IC=15mA
Table 7-6 AC Characteristics, VCE =3V, f=1.5GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
25.5
25
–
–
dB IC=15mA
IC=15mA
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.5
22.5
–
–
dB IC=6mA
IC=6mA
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
8
23
–
–
dBm ZS=ZL=50Ω
IC=15mA
IC=15mA
Table 7-7 AC Characteristics, VCE =3V, f=1.9GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
24.5
23.5
–
–
dB IC=15mA
IC=15mA
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.5
21
–
–
dB IC=6mA
IC=6mA
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
8
23
–
–
dBm ZS=ZL=50Ω
IC=15mA
IC=15mA
BFR740L3RH
Electrical Characteristics
Data Sheet 15 Revision 2.0, 2012-06-21
Table 7-8 AC Characteristics, VCE =3V, f=2.4GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
23.5
21.5
–
–
dB IC=15mA
IC=15mA
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.5
19.5
–
–
dB IC=6mA
IC=6mA
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
8
23
–
–
dBm ZS=ZL=50Ω
IC=15mA
IC=15mA
Table 7-9 AC Characteristics, VCE =3V, f=3.5GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
22
18.5
–
–
dB IC=15mA
IC=15mA
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.6
16.5
–
–
dB IC=6mA
IC=6mA
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
9
24.5
–
–
dBm ZS=ZL=50Ω
IC=15mA
IC=15mA
Table 7-10 AC Characteristics, VCE =3V, f=5.5GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
20
14.5
–
–
dB IC=15mA
IC=15mA
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.8
13
–
–
dB IC=6mA
IC=6mA
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
9.5
25
–
–
dBm ZS=ZL=50Ω
IC=15mA
IC=15mA
BFR740L3RH
Electrical Characteristics
Data Sheet 16 Revision 2.0, 2012-06-21
Note:OIP3 value depends on termination of al l intermodulation frequ ency components. Termin ation used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
Table 7-11 AC Characteristics, VCE =3V, f=10GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Gma
|S21|2
–
–
13
9
–
–
dB IC=15mA
IC=15mA
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
1.3
8.5
–
–
dB IC=6mA
IC=6mA
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
9
24
–
–
dBm ZS=ZL=50Ω
IC=15mA
IC=15mA
Table 7-12 AC Characteristics, VCE = 3 V, f = 12 GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Gma
|S21|2
–
–
11
7
–
–
dB IC=15mA
IC=15mA
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
1.5
7.5
–
–
dB IC=6mA
IC=6mA
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
6.5
20.5
–
–
dBm ZS=ZL=50Ω
IC=15mA
IC=15mA
BFR740L3RH
Electrical Characteristics
Data Sheet 17 Revision 2.0, 2012-06-21
7.4 Characteristic DC Diagrams
Figure 7-2 Collector Current vs. Collector Emitter Voltage IC=f(VCE), IB= Parameter in µA
Figure 7-3 DC Current Gain hFE =f(IC), VCE =3V
0 0.5 1 1.5 2 2.5 3 3.5 4
0
5
10
15
20
25
30
35
40
45
VCE [V]
IC [mA]
20µA
40µA
60µA
80µA
100µA
120µA
140µA
160µA
180µA
200µA
10−3 10−2 10−1
102
103
IC [A]
hFE
BFR740L3RH
Electrical Characteristics
Data Sheet 18 Revision 2.0, 2012-06-21
Figure 7-4 Collector Curren t vs. Base Emitter Forward Voltage IC=f(VBE), VCE =2V
Figure 7-5 Base Current vs. Base Emitter Forward Voltage IB=f(VBE), VCE =2V
0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9
10−4
10−3
10−2
10−1
100
101
102
VBE [V]
IC [mA]
0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9
10−7
10−6
10−5
10−4
10−3
10−2
10−1
100
VBE [V]
IB [mA]
BFR740L3RH
Electrical Characteristics
Data Sheet 19 Revision 2.0, 2012-06-21
Figure 7-6 Base Current vs. Base Emitter Reverse Voltage IB=f(VEB), VCE =2V
1 1.5 2 2.5 3
10−12
10−11
10−10
10−9
10−8
10−7
10−6
10−5
VEB [V]
IB [A]
BFR740L3RH
Electrical Characteristics
Data Sheet 20 Revision 2.0, 2012-06-21
7.5 Characteristic AC Diagrams
Measurement setup is a test fixture with Bias-T´s in a 50 Ω system, TA=25°C.
Figure 7-7 Transition Frequency fT=f(IC), f= 2 GHz, VCE = Parameter in V
Figure 7-8 3rd Order Intercept Point at output OIP3=f(IC), ZS=ZL= 50 Ω, VCE, f = Parameters
0 5 10 15 20 25 30 35 40 45
0
5
10
15
20
25
30
35
40
45
IC [mA]
fT [GHz]
4.00V
3.00V
2.50V
2.00V
1.00V
0 5 10 15 20 25 30
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
IC [mA]
OIP3 [dBm]
2V, 2400MHz
3V, 2400MHz
2V, 5500MHz
3V, 5500MHz
BFR740L3RH
Electrical Characteristics
Data Sheet 21 Revision 2.0, 2012-06-21
Figure 7-9 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz
Figure 7-10 Compression Point at output OP1dB [dBm] = f(IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz
11
1
2
13
14
15
16
16
17
1
7
18
1
8
19
19
19
19
20
20
20
20
20
20
21
21
21
21
2
1
21
22
22
22
22
22
22
23
23
23
23
23
23
24
24
24
24
24
25
25
25
25
26
26
2
6
27
22
24
VCE [V]
IC [mA]
1.5 2 2.5 3 3.5 4
5
10
15
20
25
30
1
1
1
12
2
2
3
3
3
3
4
4
4
4
5
5
5
5
6
6
6
6
6
7
7
7
7
7
8
8
8
8
8
9
9
9
9
9
10
10
10
10
11
11
11
12
12
13
VCE [V]
IC [mA]
1.5 2 2.5 3 3.5 4
5
10
15
20
25
30
BFR740L3RH
Electrical Characteristics
Data Sheet 22 Revision 2.0, 2012-06-21
Figure 7-11 Collector Base Capacitance CCB = f (VCB), f =1 MHz
Figure 7-12 Gain Gma,Gms, |S21|2 = f (f), VCE = 3 V, IC = 15 mA
0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4
0
0.04
0.08
0.12
0.16
0.2
VCB [V]
CCB [pF]
0 1 2 3 4 5 6 7 8 9 10 11 12
0
5
10
15
20
25
30
35
f [GHz]
G [dB]
Gms
Gma
|S21|2
BFR740L3RH
Electrical Characteristics
Data Sheet 23 Revision 2.0, 2012-06-21
Figure 7-13 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz
Figure 7-14 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz
0 5 10 15 20 25 30 35 40 45 50
0
5
10
15
20
25
30
35
40
IC [mA]
Gmax [dB]
12.00GHz
10.00GHz
5.50GHz
1.90GHz
3.50GHz
2.40GHz
1.50GHz
0.90GHz
0.45GHz
0.15GHz
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
0
5
10
15
20
25
30
35
40
VCE [V]
Gmax [dB]
12.00GHz
10.00GHz
5.50GHz
1.90GHz
0.90GHz
0.45GHz
0.15GHz
3.50GHz
2.40GHz
1.50GHz
BFR740L3RH
Electrical Characteristics
Data Sheet 24 Revision 2.0, 2012-06-21
Figure 7-15 Input Matching S11 = f (f), VCE = 3 V, IC = 6 / 15 mA
Figure 7-16 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 6 / 15 mA
10.1 0.2 0.3 0.4 0.5 21.5 3 4 5
0
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
1.0
0.1
12.0
0.1
1 to 12 GHz
Step: 1GHz
12.0
1.0
6.0mA
15.0mA
10.1 0.2 0.3 0.4 0.5 21.5 3 4 5
0
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
0.5
0.9
1.5
1.9
2.4
3.5
5.5
8.0
10.0
12.0
0.5
0.9
1.5
1.9
2.4
3.5
5.5
8.0
10.0
12.0
6mA
15mA
BFR740L3RH
Electrical Characteristics
Data Sheet 25 Revision 2.0, 2012-06-21
Figure 7-17 Output Matching S22 = f (f), VCE = 3 V, IC = 6 / 15 mA
Figure 7-18 Noise Figure NFmin = f (f), VCE = 3 V, IC = 6 / 15 mA, ZS = Zopt
10.1 0.2 0.3 0.4 0.5 21.5 3 4 5
0
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
1.0
0.1
12.0
0.1
1 to 12 GHz
Step: 1GHz
12.0
1.0
6.0mA
15.0mA
0 2 4 6 8 10 12
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
f [GHz]
NFmin [dB]
IC = 6mA
IC = 15mA
BFR740L3RH
Electrical Characteristics
Data Sheet 26 Revision 2.0, 2012-06-21
Figure 7-19 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz
Figure 7-20 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz
Note:The curves shown in this chapter have been g enerated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves.
0 5 10 15 20
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
IC [mA]
NFmin [dB]
f = 0.9GHz
f = 2.4GHz
f = 3.5GHz
f = 5.5GHz
f = 10GHz
f = 12GHz
0 5 10 15 20
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
IC [mA]
NF50 [dB]
f = 0.9GHz
f = 2.4GHz
f = 3.5GHz
f = 5.5GHz
f = 10GHz
f = 12GHz
BFR740L3RH
Simulation Data
Data Sheet 27 Revision 2.0, 2012-06-21
8 Simulation Data
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please
refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest
versions before actually starting your design.
You find the BFR740L3RH SPICE GP model in the internet in MWO- and ADS-format, which you can import into
these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics
and is ready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to the
pin configuration of the device.
The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFR740L3RH
SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE
GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have
been extracted.
BFR740L3RH
Package Information TSLP-3-9
Data Sheet 28 Revision 2.0, 2012-06-21
9 Package Information TSLP-3-9
Figure 9-1 Package Outline of TSLP-3-9
Figure 9-2 Footprint of TSLP-3-9
Figure 9-3 Marking Layout of TSLP-3-9
Figure 9-4 Tape of TSLP-3-9
TSLP-3-9-PO V01
Pin 1
marking
Top view Bottom view
21
±0.035
0.5
3
0.575
1)
±0.035
0.4
1)
±0.035
2x
0.25
1)
0.35
±0.035
2 x 0.15
1)
1) Dimension applies to plated terminal
0.31
-0.02
+0.01
±0.05
±0.05
±0.05
1
0.6
±0.05
Stencil aperturesCopper Solder mask
0.38
0.2
0.315
0.95
0.5
0.17
0.255
0.2
0.45
0.225
1
0.6
0.225
0.15
0.35
0.2
R0.1
R0.19
TSLP-3-9-FP V01
TSLP-3-9-TP V02
0.8
4
1.2
0.35
Pin 1
marking
8
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BFR740L3RHE6327XTSA1