NEC SILICON TRANSISTOR 2SC1009A FM/AM RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD PACKAGE DIMENSIONS FEATURES _ reese @ High Gain Bandwidth Product: fr = 250 MHz TYP. 3 - 5 - Low Output Capacitance: Cop = 1.8 pF TYP. e L Low Noise Figure: NF = 2.5 dB TYP. a ABSOLUTE MAXIMUM RATINGS NN o a Maximum Voltages and Current (T, = 25 C) Collector to Base Voltage Veso 50 v Collector to Emitter Voltage Vceo 30 Vv Marking Emitter to Base Voltage Vego 5.0 v 2; a -" Collector Current (DC) le 50 mA ~ \ | 33 Maximum Power Dissipation a ' | ] 3 Total Power Dissipation ye + potad at 25 C Ambient Temperature Py 750 mW 0-01 Maximum Temperatures . 1. Emitter Junction Temperature Tj 125 Af 2. Base Storage Temperature Range Tstg ~ 55 to +125 Cc 3. Coltector ELECTRICAL CHARACTERISTICS (T, = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current lcpo 0.1 uA Vop = 50 V, le =0 Emitter Cutoff Current lEBo 0.1 vA Veg 750 V, ic=0 DC Current Gain hee 60 100 180 : Vee=6.0 V, i=1.0mA* Base to Emitter Voltage Vee 0.65 0.70 0.75 v Voce 76.0 V, ic =1.0mA Collector Saturation Voltage VCE (sat) 0.08 03 v fo =10 mA, Ig =1,.0 mA Gain Bandwidth Product fT 150 250 MHz Veg =6.0 V, Ie =1.0mA Output Capacitance Cob : 19 | 2.2 pF Veg =6.0 V, le =0, = 1.0 MHz Coltector to Base Time : Vop 76.0 V, ig =10 mA, Constant Co-rb'b 10 16 ps fag MHz { | | = =o Noise Figure NF | 20 | 40 | ae | MES fro AS econ | : i L : hre Classification * Pulsed: PW $350 ys, Duty Cycle < 2 % Marking FAR FA4 PEE 60 to 120 90 to 180 NEC cannot assume any responsibility for any circuits shown or rapresant that they are free from patent infringement. 270 NEC Corporation 1984 NEC Comporation2SC1009A NEC arctnon oevce TYPICAL CHARACTERISTICS (T, =25 C) TOTAL POWER DISSIPATION vs. COLLECTOR CURRENT vs. AMBIENT TEMPERATURE BASE TO EMITTER VOLTAGE = | < s E s T 3 a 8 5 a 3 5 8 30 a 3 3 6 2 9 20 o ig=10 LA 0 100 150 200 0 2 4 6 8 1 12 14 16 18 20 Ta ~ Ambient Temperature --"C VCE ~Collector to Emitter Voltage~ V OC CURRENT GAIN vs. DC CURRENT GAIN vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT VoOE=6.0 Voce =6.0V <= & i g x 8 e ; o 5 = 3 3 Q 8 a 8 i i 2 EO Te 0102 68 1 2 6 10 20 VBE - Base to Emitter Voltage ~ V Ic ~- Collector Current ~ mA COLLECTOR CURRENT vs. GAIN BANDWIDTH PRODUCT COLLECTOR TO EMITTER VOLTAGE vs. EMITTER CURRENT ie= 1.0 mA Voge 6.0 hee - OC Current Gain ft ~Gain Bandwidth Product ~MHz 10. 1 2 Ol 0.2 -05 -1 -2 Bo ~ 100 Voce ~ Collector to Emitter Voltage V lg-Emitter Current--mA 271NEC arctron oevce 2SC1009A BASE AND COLLECTOR SATURATION INPUT AND OUTPUT CAPACITANCE VOLTAGE vs. COLLECTOR CURRENT vs. REVERSE VOLTAGE igs 10-tg VBE(sat) Base Saturation Voltage V VCE(sat) ~ Collector Saturation Voltage~V Cib~ Input Capacitance pF Cob Output Capacitance ~ pF 1 1 0.2 o5 1 2 5 10 50 G1 02 O85 1 2 S 1 20 50 tc~ Collector Current mA Veg Collector te Base Voltage - Veg ~ Emitter to Base Voltage -V COLLECTOR TO BASE TIME INPUT ADMITTANCE (yj9) CONSTANT vs. EMITTER CURRENT vs. COLLECTOR CURRENT Voa6.0 V 31.9 MHz Vee 6.0 V Output:Short ww oo 200 MHz ne 3 3 - Input Conductance mS input Susceptance - mS 9 wo Ce'top Collector to Base Time Constant: ps o we os 02 O14 03 1 3 10 30 0} O2 65 1 2 10 20 Ie - Emitter Current ~ mA tc Collector Current mA REVERSE TRANSFER ADMITTANCE FORWAAD TRANSFER ADMITTANCE iv) vs. COLLECTOR CURRENT (ygq) vs. COLLECTOR CURRENT Vee 6.09 input:Short Yoe -6.0 Output:Short 10.7 Mrz 2 nN o - e an ore Forward Transfer Conductance ~ mS bfe Forward Transfer Susceptance - m5 100 MHz Bre ~ Reverse Transfer Conductance mS bre ~ Reverse Transfer Susceptance mS Bfe a2 05 i 2 5 ate] 02 O5 1 2 5 10 20 i ~ Collector Current mA I-- Callector Current -- mA 2722SC1009A NEC auctron nevce OUTPUT ADMITTANCE (ypq) v5. INPUT ADMITTANCE (yin) vs. COLLECTOR CURRENT COLLECTOR CURRENT 10 Vor =6.0 Veg 6.0 5 Input:Short 500 OutputShort ww an EE 2 200 | 100 MHz Ee g L zi Bp im SE os BE 50 33 100 MHz 33 53 2g s a3 OF 2 10.7 MHz 88 a 23 35 a . $2 01 22 10 os 10.7 MHz vy 22 gg 0.05 ae ao 0.02 2 0.01 i 4 0102 05 - 2 5 10 20 02 O58 + 2 5 10 20 Ig - Collector Current --mA \o -Coitecter Current mA REVERSE TRANSFER ADMITTANCE FORWARD TRANSFER ADMITTANCE (pp) vs. COLLECTOR CURRENT ivep) vs. COLLECTOR CURRENT Vcg=6.0 Input:Short Bp 70 Yop=6.0 Output:Short 100 2 & e 8 10.7 MHz 3 100 MHz. 2 8 Q o 100 2 nN co 2 & Btp Forward Transfer Conductance mS So 8p ~ Feedback Transter Conductance ~ mS br Feedback Transfer Susceptance ~ mS bth -- Forward Transfer Susceptance mS 0.02 2 01 i 8 02 05 1 2 5 10 20 o2 05 1 2 5 10 to.- Collector Current ~ mA ic -. Collector Current ~ mA TC1486A AUG,31-84M Printed in Japan 273