VB60170G-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS (R) * Trench MOS Schottky technology D2PAK (TO-263AB) K * Low forward voltage drop, low power losses * High efficiency operation * Meets MSL level 1, per LF maximum peak of 245 C 2 1 VB60170G PIN 1 PIN 2 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 K TYPICAL APPLICATIONS HEATSINK DESIGN SUPPORT TOOLS J-STD-020, click logo to get started Models For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA Available Case: D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade PRIMARY CHARACTERISTICS IF(AV) 2 x 30 A VRRM 170 V IFSM 210 A VF at IF = 30 A 0.72 V Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test TJ max. 175 C Polarity: as marked Package D2PAK (TO-263AB) Circuit configuration Common cathode per Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage per device Maximum average forward rectified current (fig. 1) per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Operating junction and storage temperature range SYMBOL VB60170G UNIT VRRM 170 V 60 IF(AV) A 30 IFSM 210 A dV/dt 10 000 V/s TJ, TSTG -40 to +175 C ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5 A IF = 15 A Instantaneous forward voltage per diode TA = 25 C IF = 30 A VF (1) IF = 5 A IF = 15 A TA = 125 C IF = 30 A VR = 136 V Reverse current per diode VR = 170 V TYP. MAX. 0.65 - 0.78 - 0.87 1.02 0.50 - 0.62 - 0.72 0.80 UNIT V TA = 25 C 1.5 - A TA = 125 C 2.5 - mA - 450 A 5 50 mA TA = 25 C TA = 125 C IR (2) Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 20 ms Revision: 20-Jun-2018 Document Number: 89950 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VB60170G-E3 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL per diode Typical thermal resistance VB60170G RJC per device UNIT 1.0 C/W 0.7 ORDERING INFORMATION (Example) PACKAGE UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY TO-263AB VB60170G-E3/4W PREFERRED P/N 1.38 4W 50/tube DELIVERY MODE Tube TO-263AB VB60170G-E3/8W 1.38 8W 800/reel Tape and reel 40 100 Instantaneous Forward Current (A) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 175 TA = 175 C TA = 150 C 10 TA = 125 C TA = 100 C 1 TA = 25 C 0.1 0.1 Case Temperature (C) D = 0.8 D = 0.3 25.0 D = 0.2 D = 1.0 D = 0.1 20.0 15.0 T 10.0 5.0 D = tp/T tp 25 30 0.0 0 5 10 15 20 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Instantaneous Reverse Current (mA) Average Power Loss (W) D = 0.5 0.3 Instantaneous Forward Voltage (V) Fig. 1 - Maximum Forward Current Derating Curve 30.0 0.2 35 Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Per Diode 100 TA = 175 C 10 TA = 150 C TA = 125 C 1 TA = 100 C 0.1 0.01 TA = 25 C 0.001 0.0001 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Per Diode Revision: 20-Jun-2018 Document Number: 89950 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VB60170G-E3 www.vishay.com Vishay General Semiconductor Transient Thermal Impedance (C/W) Junction Capacitance (pF) 10 000 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 10 0.1 1 10 100 Reverse Voltage (V) 10 Junction to Case 1 0.1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. Mounting Pad Layout 0.42 (10.66) min. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) min. 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) min. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 20-Jun-2018 Document Number: 89950 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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