VB60170G-E3
www.vishay.com Vishay General Semiconductor
Revision: 20-Jun-2018 1Document Number: 89950
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Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
DESIGN SUPPORT TOOLS
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 20 ms
PRIMARY CHARACTERISTICS
IF(AV) 2 x 30 A
VRRM 170 V
IFSM 210 A
VF at IF = 30 A 0.72 V
TJ max. 175 °C
Package D2PAK (TO-263AB)
Circuit configuration Common cathode
1
2
K
PIN 1
PIN 2
K
HEATSINK
VB60170G
D2PAK (TO-263AB)
TMBS
®
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MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VB60170G UNIT
Maximum repetitive peak reverse voltage VRRM 170 V
Maximum average forward rectified current
(fig. 1)
per device IF(AV)
60 A
per diode 30
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 210 A
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction and storage temperature range TJ, TSTG -40 to +175 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
IF = 5 A
TA = 25 °C
VF (1)
0.65 -
V
IF = 15 A 0.78 -
IF = 30 A 0.87 1.02
IF = 5 A
TA = 125 °C
0.50 -
IF = 15 A 0.62 -
IF = 30 A 0.72 0.80
Reverse current per diode
VR = 136 V TA = 25 °C
IR (2)
1.5 - μA
TA = 125 °C 2.5 - mA
VR = 170 V TA = 25 °C - 450 μA
TA = 125 °C 5 50 mA