CEP4060AR/CEB4060AR March 1998 4 N-Channel Enhancement Mode Field Effect Transistor FEATURES e 60V , 15A , Roscon=85mQ @Ves=10V. D e Super high dense cell design for extremely low Ros(on). e High power and current handling capability. e T0-220 & TO-263 package. < t+ S CEB SERIES T0-263(DD-PAK) ABSOLUTE MAXIMUM RATINGS (Tc=25C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDs 60 V Gate-Source Voltage VGs +20 V Drain Current-Continuous ID 15 A -Pulsed IDM 45 A Drain-Source Diode Forward Current Is 15 A Maximum Power Dissipation @Tc=25C Pp 90 W Derate above 25C 0.35 wic Operating and Storage Temperature Range | Ty, TSTG -65 to 175 C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Rouc 3 CW Thermal Resistance, Junction-to-Ambient RaJA 62.5 C/W 4-42CEP4060AR/CEB4060AR ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted) Parameter Symbol Condition Min | Typ | Max | Unit DRAIN-SOURCE AVALANCHE RATING? Single Pulse Drain-Source _ _ Avalanche Energy Eas Vop=25V, ID=150A 430 md Maximum Drain-Source _ Avalanche Current as L= 25H 190 A OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVoss | Ves=0V, ID=250uA 60 V Zero Gate Voltage Drain Current IDss Vps=60V, Ves = OV 250 | vA Gate-Body Leakage lass Ves =+20V, Vos=0V +100} nA ON CHARACTERISTICS? Gate Threshold Voltage Vesith) | Vos=Ves, lo= 250uA 2,28 | 4 | V Drain-Source On-State Resistance Roson) | Ves=10V, lb=7.5A 66 | 85 | mQ On-State Drain Current ID(oN) Ves = 10V, Vos = 10V 15 A Forward Transconductance Ors Vos = 10V, l=7.5A 6 SWITCHING CHARACTERISTICS Turn-On Delay Time {D(ON) Von = 30V, 7 | 20 | ns lp =15A, Rise Time tr Ves=10V, 65 | 100 | ns Turn-Off Delay Time 1(OFF) | Ven =250 15 | 30 | ns Fall Time tt 35 | 50 | ns Total Gate Charge Qg 9 | 17 | nC Vos =48V, lp = 15A, Gate-Source Charge Qys Ves =10V 2 nc Gate-Drain Charge Qua 4 nC 4-43CEP4060AR/CEB4060AR ELECTRICAL CHARACTERISTICS (Tc=25 C unless otherwise noted) zB Parameter Symbol Condition Min | Typ | Max | Unit DYNAMIC CHARACTERISTICS Input Capacitance Ciss 292 | 400 | PF Vos =25V, Vas = 0V Output Capacitance Coss f= 0MHz 130 | 200 | PF Reverse Transfer Capacitance Crss 36 | 50 | PF DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage Vsb Ves = OV, Is =7.5A 08} 13) V Notes a.Pulse Test:Pulse Width <300 ws, Duty Cycle < 2%. b.Guaranteed by design, not subject to production testing. 30 20 Vas=10,9,8,7,6,5V 550 ! / 25 = 25C = < = = 15 & 20 Ves=4V o <+, L 5 125C 2 O O 15 = 10 & Q 10 ~ s 2 5 5 0 0 ft) 1 2 3 4 5 6 0 1 2 3 4 5 Vos, Drain-to-Source Voltage (V) Vas, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 4-44C, Capacitance (pF) Vth, Normalized Gate-Source Threshold Voltage Qrs, Transconductance (S) CEP4060AR/CEB4060AR 700 600 8 Sc & 500 a Tj=125C nN Re 400 Ne O & 300 59 25 200 ZO = 100 AG ra 0 0 10 20 30 40 50 0 5 10 15 20 2 30 Vos, Drain-to Source Voltage (V) Ip, Drain Current (A) Figure 3. Capacitance Figure 4. On-Resistance Variation with Drain Current and Temperature 1.09 wo 1.06 e | | 1.06 Vos=Vas 2 soak 250A , Ip=-250 WA * pace c 1.03 oz 1.02 ao fy @ 1.00 ES 1.00 HK 0.97 $a go 0.98 0.94 g 3 0.91 me 096 8 0.88 QO 0.94 0 -25 0 25 50 75 100 125 150 -0 -25 0 25 50 75 100 125 150 Tj, Junction Temperature (C) Tj, Junction Temperature (C) Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation with Temperature with Temperature 10 Vas=0V 8 a =z = | 6 ef 5 Yr = / 4 9 / 8 3 2 vn Vps=10V 2 0 1 1 0.1 0 2 4 6 8 10 0.4 0.6 0.8 1.0 1.2 Ips, Drain-Source Current (A) Vsp, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage with Drain Current Variation with Source Current 4-45CEP4060AR/CEB4060AR 10 70 S ae | o Vps=48V 2 8 Ip=15A i S = = 8 6 S10 3 5 an oO 2 4 3 g o 9 a Vas=10V 3 V 8 1 Single = T 0 0.5 0 2 4 6 8 10 12 14 16 1 10 60 100 Qg, Total Gate Charge (nC) Vos, Drain-Source Voltage (V) Figure 9. Gate Charge Figure 10. Maximum Safe Operating Area Vbpb Ri td(on) P| [+> tr won al VIN hoon D Vout Ves VouT INVERTED () RGEN IG Ss VIN r(t), Normalized Effective Transient Thermal Impedance Figure 11. Switching Test Circuit PULSE WIDTH Figure 12. Switching Waveforms - KN 7 Pom a Sti > [<e>| 1. Rova (t)=r (t) * Rosa 2. Roua=See Datasheet 3. Tu-Ta = Pom* Roya (t) 4. Duty Cycle, D=t1/t2 0.01 0.01 0.1 1 10 100 1000 10000 Square Wave Pulse Duration (msec) Figure 13. Normalized Thermal Transient Impedance Curve 4-46