BFR 93AT
Dec-16-19981
NPN Silicon RF Transistor
Preliminary data
For low distortion broadband amplifiers and
oscillators up to 2 GHz at collector currents from
5 mA to 30 mA
VPS05996
1
2
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR 93AT R2s 1 = B 2 = E 3 = C SC-75
Maximum Ratings
Parameter Symbol UnitValue
Collector-emitter voltage 12VCEO V
VCES
Collector-emitter voltage 20
Collector-base voltage VCBO 20
Emitter-base voltage VEBO 2
Collector current IC50 mA
Base current IB6
Total power dissipation, TS = 85 °CF) Ptot 300 mW
Junction temperature Tj150 °C
Ambient temperature TA-65 ... 150
Storage temperature Tstg -65 ... 150
Thermal Resistance
Junction - soldering point RthJS
215 K/W
1TS is measured on the collector lead at the soldering point to the pcb
BFR 93AT
Dec-16-19982
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Values UnitParameter Symbol
typ. max.min.
DC characteristics
-Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
12
V(BR)CEO V-
- 100-
ICES
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
µA
ICBO - 100Collector-base cutoff current
VCB = 10 V, IE = 0
- nA
IEBO - - µA10Emitter-base cutoff current
VEB = 2 V, IC = 0
hFE 50DC current gain
IC = 30 mA, VCE = 8 V
100 200 -
BFR 93AT
Dec-16-19983
Electrical Characteristics at T
A
= 25°C, unless otherwise specified.
Parameter Symbol Values Unit
typ.min. max.
AC characteristics (verified by random sampling)
Transition frequency
IC = 30 mA, VCE = 8 V, f = 500 MHz
GHz
fT-64.5
Collector-base capacitance
VCB = 10 V, f = 1 MHz
0.58 0.9 pF
Ccb -
0.22-
Cce
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
-
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb - -1.7
Noise figure
IC = 5 mA, VCE = 8 V, ZS = ZSopt ,
f = 900 MHz
f = 1.8 GHz
FdB
-
-
-
-
2
3.3
Gma
-
-
15.5
10
Power gain, maximum available 1)
IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 900 MHz
f = 1.8 GHz
-
-
Transducer gain
IC = 30 mA, VCE = 8 V, ZS = ZL = 50
,
f = 900 MHz
f = 1.8 GHz
|S21e|2
-
-
-
-
13.5
7.5
1Gma = |S21 / S12| (k-(k2-1)1/2)
BFR 93AT
Dec-16-19984
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
0 20 40 60 80 100 120 °C 150
TA,TS
0
50
100
150
200
mW
300
P
tot
tbd
Permissible Pulse Load RthJS = f (tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
K/W
R
thJS
tbd
Permissible Pulse Load
Ptotmax/PtotDC = f (tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
P
totmax
/ P
totDC
tbd
BFR 93AT
Dec-16-19985
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
0 5 10 15 V25
VCB
0.0
0.2
0.4
0.6
0.8
1.0
pF
1.4
C
cb
Transition frequency fT = f (IC)
VCE = Parameter
0 10 20 30 40 mA 60
IC
0
1
2
3
4
5
GHz
7
f
T
8V
5V
3V
2V
1V
Power Gain Gma, Gms = f(IC)
f = 0.9GHz
VCE = Parameter
0 10 20 30 40 mA 60
IC
7
10
13
dB
19
G
8V
5V
3V
2V
1V
Power Gain Gma, Gms = f(IC)
f = 1.8GHz
VCE = Parameter
0 10 20 30 40 mA 60
IC
0
3
6
dB
12
G
ma
8V
5V
3V
2V
1V
BFR 93AT
Dec-16-19986
Power Gain Gma, Gms = f(VCE):_____
|S21|2 = f(VCE):---------
f = Parameter
0 3 6 V12
VCE
0
2
4
6
8
10
12
14
dB
18
G
0.9GHz
1.8GHz
0.9GHz
1.8GHz
IC=30mA
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50
)
VCE = Parameter, f = 900MHz
0 10 20 30 40 mA 60
IC
10
15
20
25
dBm
35
IP
3
5V
4V
3V
2V
1V
Power Gain Gma, Gms = f(f)
VCE = Parameter
012345GHz 7
f
0
5
10
15
20
25
30
35
dB
45
G
IC=30mA
8V
5V
3V
2V
1V
Power Gain |S21|2= f(f)
VCE = Parameter
012345GHz 7
f
-6
0
6
12
18
24
dBm
36
S
21
IC=30mA
8V
5V
3V
2V
1V
