94.0 80 0.25 12.0 11.0 12.0 11.0 12.0 (C1) 3 2-O6.5 2 3 48.0 16.0 14.0 1 5(E1) 4(G1) 5 4 23.0 3-M5 9 30 +1.0 - 0 .5 14 23.0 9 14 4 (E2) 2 17.0 4-fasten tab #110 t=0.5 14 21.2 7.5 (C2E1) 1 7 LABEL Dimension:mm ollector-mitter oltage ate-mitter oltage ollector ower issipation unction emperature ange torage emperature ange ollector urrent (erminal to ase ,inute) solation oltage odule ase to eatsink ounting orque usbar to ain erminal , . . (kgfcm) ollector-mitter ut-ff urrent ate-mitter eakage urrent . . . = 1200V,= 0V . = 20V,= 0V . ollector-mitter aturation oltage = 150A,= 15V . . ate-mitter hreshold oltage = 5V,= 150mA . . nput apacitance witching ime ise urn-on all urn-off ime ime ime ime eak orward oltage everse ecovery ime = 10V,= 0V,= 1MH 12,600 = 600V L= 4 G= 3.6 = 15V . . . . . . . . orward urrent . . . = 150A,= 0V . . = 150A,= -10V i/t= 300A/s . . . . . . . hermal mpedance iode th(j-c) Junction to Case http://store.iiic.cc/ Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Fig.1- Output Characteristics (Typical) TC=25 300 15V Collector Current I C (A) 250 200 9V 150 100 8V 50 7V 0 0 2 TC=25 16 IC=75A 10V 12V Collector to Emitter Voltage V CE (V) VGE =20V 4 6 8 14 150A 12 10 8 6 4 2 0 10 0 4 Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Voltage V CE (V) Collector to Emitter Voltage V CE (V) 12 10 8 6 4 2 8 12 16 16 RL=4 TC=25 700 14 600 12 500 10 400 8 VCE =600V 300 6 400V 200 4 200V 100 2 0 20 0 150 300 450 600 750 900 1050 Gate to Emitter Voltage V GE (V) Total Gate Charge Qg (nC) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) Fig.6- Collector Current vs. Switching Time (Typical) 0 1200 1.4 50000 VGE =0V f=1MHZ Cies TC=25 20000 V CC=600V R G= 3.0 V GE =15V TC=25 1.2 Switching Time t (s) 10000 Capacitance C (pF) 20 5000 Coes 2000 1000 500 Cres 1 tOFF 0.8 tf 0.6 0.4 200 0.2 tON tr 100 50 0.1 0.2 0.5 1 2 5 10 20 50 100 200 0 0 25 50 75 100 Collector Current IC (A) Collector to Emitter Voltage V CE (V) http://store.iiic.cc/ 125 150 Gate to Emitter Voltage V GE (V) 150A 4 16 800 300A 14 0 12 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) TC=125 16 0 8 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) I C=75A 300A Fig.8- Forward Characteristics of Free Wheeling Diode (Typical) Fig.7- Series Gate Impedance vs. Switching Time (Typical) 300 10 VCC=600V IC=150A VGE=15V TC=25 Switching Time t (s) tr 2 ton 1 tf 0.5 0.2 200 150 100 50 0.1 0.05 1 2 5 10 20 50 100 0 200 0 1 2 Fig.9- Reverse Recovery Characteristics (Typical) 500 R G=3.0 V GE=15V TC125 200 trr Collector Current I C (A) 100 100 50 20 IRrM 10 4 Fig.10- Reverse Bias Safe Operating Area 500 IF=150A TC=25 200 3 Forward Voltage VF (V) Series Gate Impedance RG () 50 20 10 5 2 1 0.5 5 0.2 150 300 450 600 750 0.1 900 0 400 800 Fig.11- Transient Thermal Impedance 1 FRD 5x10 -1 IGBT 2x10 -1 1x10 -1 5x10 -2 2x10 -2 1x10 -2 5x10 -3 TC=25 2x10 -3 1x10 -3 10 -5 1200 Collector to Emitter Voltage V CE (V) -di/dt (A/s) (/W) 0 (J-C) 2 Transient Thermal Impedance Rth Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) TC=125 250 toff Forward Current I F (A) 5 TC=25 1 Shot Pulse 10 -4 10 -3 10 -2 10 -1 Time t (s) http://store.iiic.cc/ 1 10 1 1600