© Semiconductor Components Industries, LLC, 2009
May, 2009 − Rev. 0
1Publication Order Number:
BAV23CLT1/D
BAV23CLT1G
Dual High Voltage Common
Cathode Switching Diode
Features
•Moisture Sensitivity Level: 1
•ESD Rating − Human Body Model: Class 2
ESD Rating − Machine Model: Class C
•Fast Switching Speed
•Switching Application
•This is a Halide−Free Device
•This is a Pb−Free Device
Typical Applications
•LCD TV
•Power Supply
•Industrial
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage VR250 V
Repetitive Peak Reverse Voltage VRRM 250 V
Peak Forward Current IF400 mA
Non−Repetitive Peak @ t = 1.0 s
Forward Surge Current @ t = 100 s
@ t = 10 ms
IFSM 9.0
3.0
1.7
A
Peak Forward Surge Current IFM(surge) 625 mAdc
Non−Repetitive Peak
Per Human Body Model
Per Machine Model
HBM
MM
4.0
400
kV
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Device Package Shipping†
ORDERING INFORMATION
SOT−23
CASE 318
STYLE 9
MARKING DIAGRAM
1
2
3
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BAV23CLT1G SOT−23
(Pb−Free)
3000/Tape & Reel
1
AA MG
G
AA = Specific Device Code
M = Date Code
G= Pb−Free Package
(Note: Microdot may be in either location)
3
CATHODE 2
ANODE
ANODE
1
2
3
BAV23CLT1G
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
SINGLE HEATED
Total Device Dissipation (Note 1) TA = 25°C
Derate above 25°C
PD265
2.1
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 1) RJA 472 °C/W
Thermal Reference, Junction−to−Anode Lead (Note 1) R_ψJL 263 °C/W
Thermal Reference, Junction−to−Case (Note 1) R_ψJC 289 °C/W
Total Device Dissipation (Note 2) TA = 25°C
Derate above 25°C
PD345
2.7
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 2) RJA 362 °C/W
Thermal Reference, Junction−to−Anode Lead (Note 2) R_ψJL 251 °C/W
Thermal Reference, Junction−to−Case (Note 2) R_ψJC 250 °C/W
DUAL HEATED (Note 3)
Total Device Dissipation (Note 1) TA = 25°C
Derate above 25°C
PD390
3.1
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 1) RJA 321 °C/W
Thermal Reference, Junction−to−Anode Lead (Note 1) R_ψJL 159 °C/W
Thermal Reference, Junction−to−Case (Note 1) R_ψJC 138 °C/W
Total Device Dissipation (Note 2) TA = 25°C
Derate above 25°C
PD540
4.3
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 2) RJA 231 °C/W
Thermal Reference, Junction−to−Anode Lead (Note 2) R_ψJL 148 °C/W
Thermal Reference, Junction−to−Case (Note 2) R_ψJC 119 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
1. FR-4 @ 100 mm2, 1 oz. copper traces, still air.
2. FR-4 @ 500 mm2, 2 oz. copper traces, still air.
3. Dual heated values assume total power is sum of two equally powered channels
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
IR−
−
0.1
100
Adc
Reverse Breakdown Voltage
(IBR = 100 Adc)
V(BR) 250 −Vdc
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
VF−
−
1000
1250
mV
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CT−5.0 pF
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 )
trr −150 ns
BAV23CLT1G
http://onsemi.com
3
Figure 1. Forward Voltage Figure 2. Reverse Current
VF
, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)
1.41.21.00.80.40.2
0.001
0.01
0.1
1
250200150100500
0.0001
0.001
0.01
0.1
10
100
Figure 3. Total Capacitance
VR, REVERSE VOLTAGE (V)
352520151050
0
0.5
1.0
1.5
2.0
2.5
3.0
IF
, FORWARD CURRENT (mA)
Ir, REVERSE CURRENT (A)
CT
, TOTAL CAPACITANCE (pF)
0.6
0°C
125°C
−40°C
75°C
25°C
150°C
125°C
−40°C
75°C
25°C
1
30 40
TA = 25°C
f = 1 MHz
150°C
0°C
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
+10 V 2.0 k
820
0.1 F
D.U.T.
VR
100 H
0.1 F
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
trtpt
10%
90%
IF
IR
trr t
iR(REC) = 3.0 mA
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at iR(REC) = 3.0 mA)
IF
INPUT SIGNAL
Figure 4. Recovery Time Equivalent Test Circuit
BAV23CLT1G
http://onsemi.com
4
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
BAV23CLT1/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
