TGL4201
1
Aug 2011 © Rev B
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Key Features and Performance
Fixed 0, 2, 3, 6 and 10dB Attenators
Broadband Response DC to > 40 GHz
Excellent Return Loss > 15 dB
Power Handling = 20 dBm
On-Chip Grounding Vias
3MI Passive Part
Low Price
Small size: 0.5 x 0.5 x 0.1 mm
(0.02 X 0.02 X 0.004 in)
Primary Applications
Point to Point Radio
Fiber Optic
Wideband Military & Space
Test Equipment
Typical Electrical Characteristics
Attenuators Probed in Fixtures
-13
-12
-11
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0 1020304050
Frequency (GHz)
Attenua tion (dB)
2dB 3dB 6dB 10dB
0 dB Attenuator
3 dB Attenuator
2 dB Attenuator
6 dB Attenuator
10 dB Attenuator
2dB
3dB
6dB
10dB
Wideband Fixed Attenuators
Datasheet subject to change without notice.
TGL4201
2
Aug 2011 © Rev B
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
TABLE I
ELECTRICAL CHARACTERISTICS
(Ta = 25 0C Nominal)
PARAMETER
TEST
CONDITIONS MIN TYP MAX UNIT
0dB Attenuation (-00) DC – 30 GHz 1/ 0 0.1 0.2 dB
2dB Attenuation (-02) DC – 30 GHz 1/ 1.75 2 2.25 dB
3dB Attenuation (-03) DC – 30 GHz 1/ 2.65 3 3.35 dB
6dB Attenuation (-06) DC – 30 GHz 1/ 5.3 6 6.3 dB
10dB Attenuation (-10) DC – 30 GHz 1/ 9.4 10 10.4 dB
IRL Input Return Loss DC – 40 GHz 15 dB
ORL Output Return Loss DC – 40 GHz 15 dB
Maximum Power 2 - 18 GHz 20 dBm
1/ Measured on wafer with RF probes. Bond wires are not included in this measurement
.
Wafer is sample tested at ~10%. TGL4201-00 is n ot RF tested.
TGL4201
3
Aug 2011 © Rev B
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Typical Measurement Attenuators
Attenuators Probed in Fixtures
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
0 1020304050
Frequency (GHz)
R etu rn L o ss (d B )
IRL ORL
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
0 1020304050
Frequency (GHz)
Return Loss (dB)
IRL ORL
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
0 1020304050
Frequency (GHz)
R etu rn Lo ss (d B )
IRL ORL
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
0 1020304050
Frequency (GHz)
Return Loss (dB)
IRL ORL
2 dB Attenuator 3 dB Attenuator
10 dB Attenuator6 dB Attenuator
TGL4201
4
Aug 2011 © Rev B
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Typical Measurement Attenuators
No Bond Wires, Probed from 45 MHz to 110GHz
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0 20406080100
Freq uency (GHz)
Attenuaton (dB)
2dB
3dB
6dB
10dB
-60
-50
-40
-30
-20
-10
0
0 20406080100
Fre que ncy (GHz)
Input Return Loss (dB)
2dB
3dB
6dB
10dB
-60
-50
-40
-30
-20
-10
0
020406080100
Frequency (GHz)
Output Return Loss (dB)
2dB
3dB
6dB
10dB
2dB 3dB
6dB
10dB
2dB
3dB
6dB
10dB
2dB
3dB
6dB
10dB
TGL4201
5
Aug 2011 © Rev B
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Mechanical Drawing
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGL4201
6
Aug 2011 © Rev B
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Chip Assembly Diagram
TGL4201
7
Aug 2011 © Rev B
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C (30 seconds max)
.
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Maximum stage temperature is 200C.
PART NUMBER ATTENUATOR
TGL4201-00 0 dB Attenuator
TGL4201-02 2 dB Attenuator
TGL4201-03 3 dB Attenuator
TGL4201-06 6 dB Attenuator
TGL4201-10 10 dB Attenuator
Ordering Information