©2003 Fairchild Semiconductor Corporation Rev. A, September 2003
FQP9N90C/FQPF9N90C
QFETTM
FQP9N90C/FQPF9N90C
900V N-Ch annel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies.
Features
• 8.0 A, 900V, RDS(on) = 1.4 Ω @VGS = 10 V
• Low gate charge ( typical 45nC)
• Low Crss ( typical 14pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximu m Ratings TC = 25°C unless otherwise noted
* Drain current limited by maximum junction temperature
Thermal Characteri stics
Symbol Parameter FQP9N90C FQPF9N90C Units
VDSS Drain-Source Voltage 900 V
IDDrain Current - Continuous (TC = 25°C) 8.0 8.0 * A
- Continuous (TC = 100°C) 2.8 2.8 * A
IDM Drain Current - Pulsed (Note 1) 32 32 * A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 900 mJ
IAR Avalanche Current (Note 1) 8.0 A
EAR Repetitive Avalanche Energy (Note 1) 20.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns
PDPower Dissipation (TC = 25°C) 205 68 W
- Derate above 25°C 1.64 0.54 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TLMaximum lead temperature for soldering purposes,
1/8" from case for 5 seconds 300 °C
Symbol Parameter FQP9N90C FQPF9N90C Units
RθJC Thermal Resistance, Junction-to-Case 0.61 1.85 °C/W
RθJS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
TO-220
FQP Series
GSD TO-220F
FQPF Series
GS
D
!
!!
!
!
!!
!
!
!!
!
"
""
"
!
!!
!
!
!!
!
!
!!
!
#
##
#
!
!!
!
!
!!
!
!
!!
!
"
""
"
!
!!
!
!
!!
!
!
!!
!
#
##
#
S
D
G
Rev. A, September 2003
FQP9N90C/FQPF9N90C
©2003 Fairchild Semiconductor Corporation
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 21 mH, IAS = 9A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 9.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Symbol Parame ter Test Condit i ons Min Typ Max Units
Off Characteristics
BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = 250 µA900 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C -- 0.99 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 900 V, VGS = 0 V -- -- 10 µA
VDS = 720 V, TC = 125°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteri st ics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA3.0 -- 5.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 4 A -- 1.12 1.4 Ω
gFS Forward Transconductance VDS = 40 V, ID = 4 A (Note 4) -- 9.2 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 2100 2730 pF
Coss Output Capacitance -- 175 230 pF
Crss Reverse Transfer Capacitance -- 14 18 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 450 V, ID = 9.0A ,
RG = 25 Ω
(Note 4, 5)
-- 50 110 ns
trTurn-On Rise Time -- 120 250 ns
td(off) Turn-Off D e l a y Time -- 100 210 n s
tfTurn -Off Fa ll Time -- 75 160 ns
QgTotal Gate Ch arge VDS = 720 V, ID = 9.0A,
VGS = 10 V
(Note 4, 5)
-- 45 58 nC
Qgs Gate-Source Charge -- 13 -- nC
Qgd Gate-Drain Charge -- 18 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 8.0 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 32.0 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 8 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, I S = 9 A ,
dIF / dt = 100 A/µs (Note 4)
-- 550 -- ns
Qrr Reverse Recovery Charge -- 6.5 - - µC
Rev. A, September 2003
FQP9N90C/FQPF9N90C
©2003 Fairchild Semiconductor Corporation
Typical Characteristics
10-1 100101
10-1
100
101
VGS
Top : 1 5 .0 V
10 .0 V
8.0 V
7.0 V
6.5 V
6.0 V
Botto m : 5.5 V
$ N o te s :
1. 250%s Pulse Test
2. T C = 25&
ID, D ra in Curre n t [A ]
VDS, Drain-Sou rce Voltage [V]
246810
10-1
100
101
150oC
25oC-55oC
$
N o te s :
1 . VDS = 50V
2 . 2 5 0 %s Pulse Test
ID, Drain C urrent [A]
VGS, G ate-Source Voltage [V]
0 5 10 15 20 25 30
1.0
1.5
2.0
2.5
3.0
VGS = 20 V
VGS = 10V
$
N o te : TJ = 25&
RDS(ON) ['],
Drain-Source On-Resistance
ID, Drain Current [A] 0.2 0.4 0.6 0.8 1.0 1.2 1.4
10-1
100
101
150&
$ N o te s :
1. V GS = 0V
2. 250%s Pulse T es t
25&
IDR, Reverse Drain Current [A]
VSD, Source-Drain voltage [V]
10-1 100101
0
500
1000
1500
2000
2500
3000
3500 Ciss = C gs + Cgd (C ds = shorted)
Coss = Cds + Cgd
Crss = Cgd
$ N o te s :
1. V GS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source V oltage [V]
0 1020304050
0
2
4
6
8
10
12
VDS = 450V
VDS = 180V
VDS = 720V
$ N o te : ID = 9A
VGS, Gate -S o u rc e V o ltag e [V ]
QG, To ta l G a te C h a rg e [n C ]
Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Character i st ics
Figure 3. On-Resist anc e Variatio n vs
Drain Current and Gate Voltage Figure 4. Body Diode Fo rwa rd Voltage
Variation with Source Current
and Temperature
Figure 5. Capacitanc e Ch ar acteristics Figure 6. Gate Charge C haracteris tics
Rev. A, September 2003
FQP9N90C/FQPF9N90C
©2003 Fairchild Semiconductor Corporation
Typical Characteristics (Continued)
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
$
Notes :
1. VGS = 0 V
2. ID = 250 %A
BV DSS , (Norm alized)
D rain-Source Breakdown V oltage
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
$
N o te s :
1 . V GS = 10 V
2 . ID = 4.5 A
RDS(ON) , (Norm alized)
Drain-Source O n-Resistance
TJ, Junction Tem perature [oC]
100101102103
10-2
10-1
100
101
102
100 m s
10 µs
DC 10 m s
1 m s
100 µs
Operation in This Area
is Limited by R DS(on)
$ N o te s :
1. T C = 25 oC
2. T J = 150 oC
3. Single Pulse
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
100101102103
10-2
10-1
100
101
102
100 m s
10 µs
DC
10 m s
1 m s
100 µs
Operation in This Area
is Limited by R DS(on)
$ N o te s :
1. T C = 25 oC
2. T J = 150 oC
3. Single Pulse
ID, Drain C u rre n t [A ]
VDS, Drain-Source Voltage [V]
25 50 75 100 125 150
0
2
4
6
8
ID, D ra in Curr en t [A]
TC, Case Tem perature [&
]
Figure 7. Breakdown Voltage Variation
vs Temperatu re Figure 8. O n-Resistan ce Vari at i on
vs Temperature
Figure 9-1. Maxi mum Safe O perating Area
for FQP9N90C Figure 9-2. Maximu m Safe Operat ing Ar ea
for FQP F 9N90C
Figure 10. Maximum D rain C urrent
vs Case Temperat ur e
Rev. A, September 2003
FQP9N90C/FQPF9N90C
©2003 Fairchild Semiconductor Corporation
Typical Characteristics (Continued)
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
$ No te s :
1 . Z(JC(t) = 1.85 &/W Max.
2 . Du ty Fa c t o r , D=t 1/t2
3 . TJM - TC = P DM * Z(JC(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z(JC
(t), Th erm al R esponse
t1, S q u a r e Wa v e P u ls e Du ra tio n [s e c ]
t1
PDM
t2
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
$ No te s :
1 . Z(JC(t) = 0.61 &/W Max.
2 . Du ty Fa c t o r , D=t 1/t2
3 . TJM - TC = P DM * Z(JC(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z(JC
(t), Th erm al R esponse
t1, S q u a r e Wa v e P u ls e Du ra tio n [s e c ]
t1
PDM
t2
Figure 11-1. Transi ent Therma l Re sponse Curve for FQP9 N 90C
Figure 11-2. Transient Ther m al Response Cur ve f o r FQPF9N90C
Rev. A, September 2003©2003 Fairchild Semiconductor Corporation
FQP9N90C/FQPF9N90C
Charge
VGS
10V Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50K)
200nF
12V
Same Type
as DUT
Charge
VGS
10V Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50K)
200nF
12V
Same Type
as DUT
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS RL
DUT
RG
VGS
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
ID
ID
t p
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
Rev. A, September 2003©2003 Fairchild Semiconductor Corporation
FQP9N90C/FQPF9N90C
Peak Diode Recovery dv/dt Test Circuit & Waveform s
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD con troll ed by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD con troll ed by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
Rev. A, September 2003©2003 Fairchild Semiconductor Corporation
FQP9N90C/FQPF9N90C
Package Dimensions
4.50 ±0.20
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10 2.40 ±0.20
10.00 ±0.20
1.27 ±0.10
ø3.60 ±0.10
(8.70)
2.80 ±0.1015.90 ±0.20
10.08 ±0.30 18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20 ±0.2013.08 ±0.20
1.30 ±0.10
1.30 +0.10
–0.05
0.50 +0.10
–0.05
2.54TYP
[2.54 ±0.20]2.54TYP
[2.54 ±0.20]
TO-220
Dimensions in Millimeters
Rev. A, September 2003
FQP9N90C/FQPF9N90C
©2003 Fairchild Semiconductor Corporation
Package Dimensions (Continued)
(7.00) (0.70)
MAX1.47
(30°)
#1
3.30 ±0.10
15.80 ±0.20
15.87 ±0.20
6.68 ±0.20
9.75 ±0.30
4.70 ±0.20
10.16 ±0.20
(1.00x45°)
2.54 ±0.20
0.80 ±0.10
9.40 ±0.20
2.76 ±0.20
0.35 ±0.10
ø3.18 ±0.10
2.54TYP
[2.54 ±0.20]2.54TYP
[2.54 ±0.20]
0.50 +0.10
–0.05
TO-220F
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devic es or syst em s
which, (a) ar e intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production T his datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I5
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FACT Quiet series™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
UltraFET®
VCX™
ACEx™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
Across the board. Around the world.™
The Power Franchise™
Programmab le Acti ve Droo p™
