May 2011 Doc ID 17042 Rev 5 1/18
18
STB120N4F6
STD120N4F6
N-channel 40 V, 3.5 mΩ , 80 A, DPAK, D²PAK
STripFET™ VI DeepGATE™ Power MOSFET
Features
■Standard threshold drive
■100% avalanche tested
Application
■Switching applications
■Automotive
Description
These devices are 40 V N-channel STripFET™ VI
Power MOSFET based on the ST’s proprietary
STripFET™ technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest
RDS(on) in all packages.
Figure 1. Internal schematic diagram
Order codes VDSS
RDS(on)
max. ID
STB120N4F6 40 V 4 mΩ80 A (1)
1. Current limited by package
STD120N4F6 40 V 4 mΩ80 A (1)
DPAK
1
3
D²PAK
1
3
!-V
$4!"OR
'
3
Table 1. Device summary
Order codes Marking Package Packaging
STB120N4F6 120N4F6 D²PAK Tape and reel
STD120N4F6 DPAK
www.st.com
Contents STB120N4F6, STD120N4F6
2/18 Doc ID 17042 Rev 5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
STB120N4F6, STD120N4F6 Electrical ratings
Doc ID 17042 Rev 5 3/18
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 40 V
VGS Gate-source voltage ± 20 V
ID (1)
1. Current limited by package
Drain current (continuous) at TC = 25 °C 80 A
ID (1) Drain current (continuous) at TC = 100 °C 80 A
IDM (2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 320 A
PTOT Total dissipation at TC = 25 °C 110 W
Tstg Storage temperature
-55 to 175 °C
TjOperating junction temperature
Table 3. Thermal resistance
Symbol Parameter
Value
Unit
DPAK D²PAK
Rthj-case Thermal resistance junction-case max 1.36 °C/W
Rthj-pcb Thermal resistance junction-pcb max (1)
1. When mounted on 1 inch2 2 oz. Cu board.
50 35 °C/W
Table 4. Thermal resistance
Symbol Parameter Value Unit
IAR(1)
1. Pulse width limited by Tj max
Avalanche current, repetitive or not-repetitive 40 A
EAS (2)
2. Starting Tj = 25 °C, ID = 40 A, VDD = 25 V
Single pulse avalanche energy 394 mJ
Electrical characteristics STB120N4F6, STD120N4F6
4/18 Doc ID 17042 Rev 5
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
Voltage ID = 250 µA, VGS= 0 40 V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 20 V
VDS = 20 V,Tc = 125 °C
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0) VGS = ± 20 V ±100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 4 V
RDS(on)
Static drain-source on
resistance VGS = 10 V, ID = 40 A 3.5 4.0 mΩ
Table 6. Dynamic
Symbol Parameter Test conditions Min Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f=1 MHz,
VGS = 0 V -
3850
650
350
-
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 20 V, ID = 80 A
VGS = 10 V
(see Figure 14)
-
65
20
16
-
nC
nC
nC
RGIntrinsic gate resistance f = 1 MHz open drain - 1.5 - Ω
STB120N4F6, STD120N4F6 Electrical characteristics
Doc ID 17042 Rev 5 5/18
Table 7. Switching on/off (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on)
tr
Turn-on delay time
Rise time VDD = 20 V, ID = 40 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15)
-20
70 -ns
ns
td(off)
tf
Turn-off delay time
Fall time -40
20 -ns
ns
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM(1)
1. Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed) -80
320
A
A
VSD(2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage ISD = 40 A, VGS = 0 -1.1V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 80 A,
di/dt = 100 A/µs,
VDD = 30 V
(see Figure 17)
-
40
56
2.8
ns
nC
A
Electrical characteristics STB120N4F6, STD120N4F6
6/18 Doc ID 17042 Rev 5
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance
I
D
100
10
1
0.1
0.1 1V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
100µs
1ms
10ms
Tj=175°C
Tc=25°C
Single pulse
AM08627v1
I
D
200
100
50
002V
DS
(V)
4
(A)
135
250
300
5V
6V
4V
V
GS
=10V
7
68
150
350
AM08628v1
I
D
150
100
50
002V
GS
(V)
4
(A)
135
200
300
V
DS=
2V
AM08629v1
BV
DSS
-75 T
J
(°C)
(norm)
-25 75
25 125
0.80
0.85
0.90
0.95
1.00
1.05
175
1.10
1.15
AM08630v1
R
DS(on)
3.5
3.0
2.5
2.0 I
D
(A)
(mΩ)
20 40
4.0
4.5
V
GS
=10V
60 80
AM08631v1
STB120N4F6, STD120N4F6 Electrical characteristics
Doc ID 17042 Rev 5 7/18
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized on resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
V
GS
6
4
2
0010 Q
g
(nC)
(V)
40
8
20 30
10 V
DD
=20V
I
D
=80A
50 60 70
AM08632v1
C
1000
100
10 0.1 10 V
DS
(V)
(pF)
1
Ciss
Coss
Crss
AM08633v1
V
GS(th)
0.8
0.6
0.4
0.2
-75 T
J
(°C)
(norm)
-25
1.0
75
25 125
1.2
175
AM08634v1
R
DS(on)
2.0
1.5
1.0
0.5
-75 T
J
(°C)
(norm)
-25 75
25 125
V
GS
=10V
I
D
=40A
0
175
AM08635v1
V
SD
20 I
SD
(A)
(V)
10 50
3040
0.4
0.5
0.6
0.7
0.8
0.9
1.0
T
J
=-55°C
T
J
=175°C
T
J
=25°C
60 70 80
AM08636v1
Test circuits STB120N4F6, STD120N4F6
8/18 Doc ID 17042 Rev 5
3 Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped Inductive load test
circuit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3
μFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
μF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
BB
RG
G
FAST
DIODE
D
S
L=100μH
μF
3.31000
μFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
μF
3.3
μFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
STB120N4F6, STD120N4F6 Package mechanical data
Doc ID 17042 Rev 5 9/18
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and products status are available at: www.st.com.
ECOPACK is an ST trademark.
Package mechanical data STB120N4F6, STD120N4F6
10/18 Doc ID 17042 Rev 5
Table 9. D²PAK (TO-263) mechanical data
Dim.
mm
Min. Typ. Max.
A 4.40 4.60
A1 0.03 0.23
b 0.70 0.93
b2 1.14 1.70
c 0.45 0.60
c2 1.23 1.36
D 8.95 9.35
D1 7.50
E10 10.40
E1 8.50
e2.54
e1 4.88 5.28
H15 15.85
J1 2.49 2.69
L 2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R0.4
V2 0° 8°
STB120N4F6, STD120N4F6 Package mechanical data
Doc ID 17042 Rev 5 11/18
Figure 19. D²PAK footprint(a)
Figure 20. D²PAK (TO-263) drawing
a. All dimension are in millimeters
16.90
12.20
9.75
3.50
5.08
1.60
Footprint
0079457_R
Package mechanical data STB120N4F6, STD120N4F6
12/18 Doc ID 17042 Rev 5
Figure 21. DPAK footprint(b)
Table 10. DPAK (TO-252) mechanical data
Dim.
mm
Min. Typ. Max.
A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
b 0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
D1 5.10
E 6.40 6.60
E1 4.70
e2.28
e1 4.40 4.60
H9.35 10.10
L 1 1.50
L1 2.80
L2 0.80
L4 0.60 1
R0.20
V2 0° 8°
b. All dimension are in millimeters
6.7
1.6
1.6
2.3
2.3
6.7 1.83
AM08850v1
STB120N4F6, STD120N4F6 Package mechanical data
Doc ID 17042 Rev 5 13/18
Figure 22. DPAK (TO-252) drawing
0068772_H
Packaging mechanical data STB120N4F6, STD120N4F6
14/18 Doc ID 17042 Rev 5
5 Packaging mechanical data
Table 11. D²PAK (TO-263) tape and reel mechanical data
Tape Reel
Dim.
mm
Dim.
mm
Min. Max. Min. Max.
A0 10.5 10.7 A 330
B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base qty 1000
P2 1.9 2.1 Bulk qty 1000
R50
T 0.25 0.35
W 23.7 24.3
STB120N4F6, STD120N4F6 Packaging mechanical data
Doc ID 17042 Rev 5 15/18
Table 12. DPAK (TO-252) tape and reel mechanical data
Tape Reel
Dim.
mm
Dim.
mm
Min. Max. Min. Max.
A0 6.8 7 A 330
B0 10.4 10.6 B 1.5
B1 12.1 C 12.8 13.2
D1.5 1.6D20.2
D1 1.5 G 16.4 18.4
E 1.65 1.85 N 50
F 7.4 7.6 T 22.4
K0 2.55 2.75
P0 3.9 4.1 Base qty. 2500
P1 7.9 8.1 Bulk qty. 2500
P2 1.9 2.1
R40
T 0.25 0.35
W 15.7 16.3
Packaging mechanical data STB120N4F6, STD120N4F6
16/18 Doc ID 17042 Rev 5
Figure 23. Tape for DPAK (TO-252) and D²PAK (TO-263)
Figure 24. Reel for DPAK (TO-252) and D²PAK (TO-263)
P1
A0 D1
P0
F
W
E
D
B0
K0
T
User direction of feed
P2
10 pitches cumulative
tolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
Top cover
tape
AM08852v2
A
D
B
Full radius G measured at hub
C
N
REEL DIMENSIONS
40mm min.
Access hole
At slot location
T
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
STB120N4F6, STD120N4F6 Revision history
Doc ID 17042 Rev 5 17/18
6 Revision history
Table 13. Document revision history
Date Revision Changes
09-Feb-2010 1 First release
29-Oct-2010 2 Document status promoted from preliminary data to datasheet.
11-Nov-2010 3 Corrected RDS(on) value in Ta b l e 5 : S t a t i c .
13-May-2011 4 Removed package and mechanical data: TO-220
17-May-2011 5 Description in cover page has been updated.
STB120N4F6, STD120N4F6
18/18 Doc ID 17042 Rev 5
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2011 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
