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FGA5065ADF 650 V, 50 A Field Stop Trench IGBT Features General Description * Maximum Junction Temperature : TJ = 175oC This ADF IGBT series adopted field stop trench 3rd generation IGBT which offer extreme low VCE(sat) and much faster switching characteristics for outstanding efficiency. And this kind of technology is fully optimized to variety PFC (Power Factor Correction) topology; Single Boost, Multi Channel Interleaved etc with over 20KHz switching performance. TO3P package provide super low thermal resistance for much wider SOA for system stability. * Positive Temperaure Co-efficient for Easy Parallel Operating * High Current Capability * Low Saturation Voltage: VCE(sat) = 1.7 V(Typ.) @ IC = 50 A * 100% of the Parts Tested for ILM(1) * High Input Impedance * Fast Switching * Tighten Parameter Distribution Applications * RoHS Compliant * PFC topology for home applicnce: Single Boost, Multi Channel Interleaved etc. C G G C TO-3PN E Absolute Maximum Ratings Symbol VCES VGES IC FGA5065ADF Unit Collector to Emitter Voltage 650 V Gate to Emitter Voltage 20 V Transient Gate to Emitter Voltage 30 V 100 A 50 A Collector Current @ TC = @ TC = 100oC Pulsed Collector Current Pulsed Collector Current PD 25oC Collector Current ICM (2) IFM (2) TC = 25C unless otherwise noted Description ILM (1) IF (3) E o @ TC = 25 C 150 A 150 A Diode Forward Current @ TC = 25oC 40 A Diode Forward Current @ TC = 100oC 20 A 120 A Maximum Power Dissipation @ TC = 25oC 268 W Maximum Power Dissipation @ TC = 100oC Pulsed Diode Maximum Forward Current 134 W TJ Operating Junction Temperature -55 to +175 oC Tstg Storage Temperature Range -55 to +175 oC TL Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds 300 o C Notes: 1. VCC = 400 V, VGE = 15 V, IC =150 A, RG = 55.9 Inductive Load. 2. Repetitive rating: Pulse width limited by max. junction temperature. 3. The purpose of diode is protection for negative voltage. (c)2015 Fairchild Semiconductor Corporation FGA5065ADF Rev. 1.0 1 www.fairchildsemi.com FGA5065ADF -- 650 V, 50 A Field Stop Trench IGBT August 2015 Symbol Parameter FGA5065ADF Unit RJC(IGBT) Thermal Resistance, Junction to Case, Max. 0.56 o RJC(Diode) Thermal Resistance, Junction to Case, Max. 1.71 oC/W RJA Thermal Resistance, Junction to Ambient, Max. 40 oC/W C/W Package Marking and Ordering Information Part Number Top Mark FGA5065ADF FGA5065ADF Package Packaging Method TO-3PN Parameter Tape Width Quantity - - 30 Tube Electrical Characteristics of the IGBT Symbol Reel Size TC = 25C unless otherwise noted Test Conditions Min. Typ. Max. Unit 650 - - V - 0.58 - V/oC Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1 mA BVCES / TJ Temperature Coefficient of Breakdown Voltage ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - 400 nA IC = 50 mA, VCE = VGE IC = 1 mA, Reference to 25oC On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 4.1 5.6 7.6 V IC = 50 A, VGE = 15 V - 1.7 2.2 V IC = 50 A, VGE = 15 V, TC = 175oC - 2.28 - V - 1995 - pF VCE = 30 V, VGE = 0 V, f = 1MHz - 70 - pF - 23 - pF - 20.8 - ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time - 41.6 - ns td(off) Turn-Off Delay Time - 62.4 - ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 309 - uJ Ets Total Switching Loss - 1659 - uJ td(on) Turn-On Delay Time - 19.2 - ns tr Rise Time - 38.4 - ns td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Ets Total Switching Loss (c)2015 Fairchild Semiconductor Corporation FGA5065ADF Rev. 1.0 VCC = 400 V, IC = 50 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 25oC VCC = 400 V, IC = 50 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 175oC 2 - 11.2 - ns - 1350 - uJ - 67.2 - ns - 12.8 - ns - 1820 - uJ - 558 - uJ - 2378 - uJ www.fairchildsemi.com FGA5065ADF -- 650 V, 50 A Field Stop Trench IGBT Thermal Characteristics Symbol Parameter Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge Test Conditions VCE = 400 V, IC = 50 A, VGE = 15 V Electrical Characteristics of the Diode Symbol Parameter VFM Diode Forward Voltage Erec Reverse Recovery Energy trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge (c)2015 Fairchild Semiconductor Corporation FGA5065ADF Rev. 1.0 (Continued) Min. Typ. Max Unit - 72.2 - nC - 13.5 - nC - 28.5 - nC Unit TC = 25C unless otherwise noted Test Conditions IF = 20 A IF =20 A, dIF/dt = 200 A/s 3 Min. Typ. Max TC = 25oC - 2.1 2.6 TC = 175oC - 1.94 - TC = 175oC - 50 - TC = 25oC - 31.8 - TC = 175oC - 192 - TC = 25oC - 50.6 - TC = 175oC - 699 - V uJ ns nC www.fairchildsemi.com FGA5065ADF -- 650 V, 50 A Field Stop Trench IGBT Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics 120 Collector Current, IC [A] 120 20V 15V 12V o TC = 25 C 60 VGE = 8V 30 0 20V 1 2 3 4 Collector-Emitter Voltage, VCE [V] Figure 3. Typical Saturation Voltage Characteristics 12V 90 60 VGE = 8V 30 0 5 10V 15V 10V 90 0 o TC = 175 C Collector Current, IC [A] 150 Figure 2. Typical Output Characteristics 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 5 Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level 150 Collector Current, IC [A] Common Emitter VGE = 15V 120 o TC = 25 C o TC = 175 C 90 60 30 0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 5 Figure 5. Saturation Voltage vs. VGE 20 20 o o TC = 25 C 16 12 IC = 25A 8 50A 100A 4 0 Common Emitter Common Emitter Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 6. Saturation Voltage vs. VGE TC = 175 C 16 12 50A 8 IC = 25A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] (c)2015 Fairchild Semiconductor Corporation FGA5065ADF Rev. 1.0 20 4 100A 4 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA5065ADF -- 650 V, 50 A Field Stop Trench IGBT Typical Performance Characteristics Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics 15 10000 Common Emitter Gate-Emitter Voltage, VGE [V] o Capacitance [pF] Cies 1000 Coes 100 Common Emitter VGE = 0V, f = 1MHz Cres TC = 25 C 12 300V VCC = 200V 400V 9 6 3 o TC = 25 C 10 0 1 10 Collector-Emitter Voltage, VCE [V] 30 Figure 9. Turn-on Characteristics vs. Gate Resistance 20 40 60 Gate Charge, Qg [nC] 80 Figure 10. Turn-off Characteristics vs. Gate Resistance 1000 Switching Time [ns] 100 Switching Time [ns] tr td(on) Common Emitter VCC = 400V, VGE = 15V IC = 50A 10 td(off) 100 tf Common Emitter VCC = 400V, VGE = 15V IC = 50A o 10 o TC = 25 C 8 0 TC = 25 C o TC = 175 C o TC = 175 C 0 10 20 30 40 Gate Resistance, RG [] 4 50 Figure 11. Switching Loss vs. Gate Resistance 0 10 20 30 Gate Resistance, RG [] 40 50 Figure 12. Turn-on Characteristics vs. Collector Current 500 4 Common Emitter VGE = 15V, RG = 6 o TC = 25 C Switching Time [ns] Switching Loss [mJ] Eon 1 Eoff Common Emitter VCC = 400V, VGE = 15V IC = 50A o TC = 175 C tr 100 td(on) o TC = 25 C o TC = 175 C 0.1 0 10 20 30 40 Gate Resistance, RG [] (c)2015 Fairchild Semiconductor Corporation FGA5065ADF Rev. 1.0 10 50 0 30 60 90 120 150 Collector Current, IC [A] 5 www.fairchildsemi.com FGA5065ADF -- 650 V, 50 A Field Stop Trench IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Collector Current Figure 14. Switching Loss vs. Collector Current 10 200 td(off) Switching Loss [mJ] Switching Time [ns] 100 tf Common Emitter VGE = 15V, RG = 6 10 Eon 1 Common Emitter VGE = 15V, RG = 6 Eoff o o TC = 25 C TC = 25 C o o TC = 175 C TC = 175 C 4 0 30 0.1 60 90 120 Collector Current, IC [A] 0 150 30 60 90 120 Figure 15. Load Current Vs. Frequency Figure 16. SOA Characteristics 200 250 Square Wave 100 10s TJ <= 175 C, D = 0.5, VCE = 400V 200 VGE = 15/0V, RG = 6 Collector Current, Ic [A] Collector Current, [A] o o TC = 25 C 150 o TC = 75 C 100 o TC = 100 C 100s 1ms 10 ms DC 10 1 *Notes: o 1. TC = 25 C 50 o 2. TJ = 175 C 3. Single Pulse 0 1k 0.1 10k 100k Switching Frequency, f[Hz] 1M Figure 17. Forward Characteristics 1 10 100 Collector-Emitter Voltage, VCE [V] 10 Reverse Recovery Currnet, Irr [A] o o TJ = 175 C TJ = 25 C 10 1000 Figure 18. Reverse Recovery Current 80 Forward Current, IF [A] 150 Collector Current, IC [A] o TJ = 75 C o TC = 25 C o TC = 75 C o TC = 25 C o 8 di/dt = 200A/s TC = 175 C 6 di/dt = 100A/s 4 di/dt = 200A/s di/dt = 100A/s 2 o 1 TC = 175 C 0 1 2 3 4 Forward Voltage, VF [V] (c)2015 Fairchild Semiconductor Corporation FGA5065ADF Rev. 1.0 0 5 6 0 10 20 30 Forward Current, IF [A] 40 www.fairchildsemi.com FGA5065ADF -- 650 V, 50 A Field Stop Trench IGBT Typical Performance Characteristics Figure 19. Reverse Recovery Time 300 Figure 20. Stored Charge 1000 o Stored Recovery Charge, Qrr [nC] Reverse Recovery Time, trr [ns] TC = 25 C o 250 TC = 175 C 200 150 di/dt = 200A/s 100 di/dt = 100A/s 50 0 0 10 20 30 Forward Current, IF [A] o TC = 175 C 800 600 400 di/dt = 200A/s di/dt = 100A/s 200 0 40 o TC = 25 C 0 10 20 30 Forward Current, IF [A] 40 Figure 21.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 0.6 0.5 0.1 0.2 0.1 0.05 PDM 0.02 t1 0.01 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.01 single pulse 0.005 -5 10 -4 10 -3 -2 10 -1 10 10 0 10 Rectangular Pulse Duration [sec] Figure 22.Transient Thermal Impedance of Diode Thermal Response [Zthjc] 2 1 0.5 0.2 0.1 0.1 0.05 PDM 0.02 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.01 single pulse 0.01 -5 10 -4 10 -3 -2 10 10 -1 10 0 10 Rectangular Pulse Duration [sec] (c)2015 Fairchild Semiconductor Corporation FGA5065ADF Rev. 1.0 7 www.fairchildsemi.com FGA5065ADF -- 650 V, 50 A Field Stop Trench IGBT Typical Performance Characteristics 5.00 4.60 1.65 1.45 16.20 15.40 5.20 4.80 13.80 13.40 3.30 3.10 R0.50 3 20.10 19.70 16.96 16.56 18.90 18.50 3 1 3 3.70 3.30 1.85 2.20 1.80 3.20 2.80 2.00 1.60 4 2.60 2.20 20.30 19.70 1.20 0.80 0.55 M 5.45 R0.50 0.75 0.55 5.45 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC-65 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSION AND TOLERANCING PER ASME14.5-2009. D) DIMENSIONS ARE EXCLUSSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSSIONS. E) DRAWING FILE NAME: TO3PN03AREV2. F) FAIRCHILD SEMICONDUCTOR. 7.20 6.80 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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