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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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©2015 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FGA5065ADF Rev. 1.0
FGA5065ADF — 650 V, 50 A Field Stop Trench IGBT
August 2015
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Notes:
1. VCC = 400 V, VGE = 15 V, IC =150 A, RG = 55.9 Inductive Load.
2. Repetitive rating: Pulse width limited by max. junction temperature.
3. The purpose of diode is protection for negative voltage.
Symbol Description FGA5065ADF Unit
VCES Collector to Emitter Voltage 650 V
VGES
Gate to Emitter Voltage 20 V
Transient Gate to Emitter Voltage 30 V
IC
Collector Current @ TC = 25oC100 A
Collector Current @ TC = 100oC50 A
ILM (1) Pulsed Collector Current @ TC = 25oC 150 A
ICM (2) Pulsed Collector Current 150 A
IF (3)
Diode Forward Current @ TC = 25oC40 A
Diode Forward Current @ TC = 100oC20 A
IFM (2) Pulsed Diode Maximum Forward Current 120 A
PD
Maximum Power Dissipation @ TC = 25oC268 W
Maximum Power Dissipation @ TC = 100oC134 W
TJ Operating Junction Temperature -55 to +175 oC
Tstg Storage Temperature Range -55 to +175 oC
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 oC
G
E
C
TO-3PN
GCE
FGA5065ADF
650 V, 50 A Field Stop Trench IGBT
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.7 V(Typ.) @ IC = 50 A
• 100% of the Parts Tested for ILM(1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
•RoHS Compliant
General Description
This ADF IGBT series adopted field stop trench 3rd generation
IGBT which offer extreme low VCE(sat) and much faster switch-
ing characteristics for outstanding efficiency. And this kind of
technology is fully optimized to variety PFC (Power Factor Cor-
rection) topology; Single Boost, Multi Channel Interleaved etc
with over 20KHz switching performance. TO3P package provide
super low thermal resistance for much wider SOA for system
stability.
Applications
• PFC topology for home applicnce: Single Boost, Multi Chan-
nel Interleaved etc.
FGA5065ADF — 650 V, 50 A Field Stop Trench IGBT
©2015 Fairchild Semiconductor Corporation 2www.fairchildsemi.com
FGA5065ADF Rev. 1.0
Thermal Characteristics
Package Marking and Ordering Information
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol Parameter FGA5065ADF Unit
RJC(IGBT) Thermal Resistance, Junction to Case, Max. 0.56 oC/W
RJC(Diode) Thermal Resistance, Junction to Case, Max. 1.71 oC/W
RJA Thermal Resistance, Junction to Ambient, Max. 40 oC/W
Part Number Top Mark Package Packaging Method Reel Size Tape Width Quantity
FGA5065ADF FGA5065ADF TO-3PN Tube - - 30
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1 mA 650 - - V
BVCES /
TJ
Temperature Coefficient of Breakdown
Voltage IC = 1 mA, Reference to 25oC-0.58-V/
oC
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 50 mA, VCE = VGE 4.1 5.6 7.6 V
VCE(sat) Collector to Emitter Saturation Voltage
IC = 50 A, VGE = 15 V -1.72.2V
IC = 50 A, VGE = 15 V,
TC = 175oC-2.28- V
Dynamic Characteristics
Cies Input Capacitance
VCE = 30 V, VGE = 0 V,
f = 1MHz
- 1995 - pF
Coes Output Capacitance - 70 - pF
Cres Reverse Transfer Capacitance - 23 - pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 400 V, IC = 50 A,
RG = 6 , VGE = 15 V,
Inductive Load, TC = 25oC
-20.8- ns
trRise Time - 41.6 - ns
td(off) Turn-Off Delay Time - 62.4 - ns
tfFall Time - 11.2 - ns
Eon Turn-On Switching Loss - 1350 - uJ
Eoff Turn-Off Switching Loss - 309 - uJ
Ets Total Switching Loss - 1659 - uJ
td(on) Turn-On Delay Time
VCC = 400 V, IC = 50 A,
RG = 6 , VGE = 15 V,
Inductive Load, TC = 175oC
-19.2- ns
trRise Time - 38.4 - ns
td(off) Turn-Off Delay Time - 67.2 - ns
tfFall Time - 12.8 - ns
Eon Turn-On Switching Loss - 1820 - uJ
Eoff Turn-Off Switching Loss - 558 - uJ
Ets Total Switching Loss - 2378 - uJ
FGA5065ADF — 650 V, 50 A Field Stop Trench IGBT
©2015 Fairchild Semiconductor Corporation 3www.fairchildsemi.com
FGA5065ADF Rev. 1.0
Electrical Characteristics of the IGBT (Continued)
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max Unit
QgTotal Gate Charge
VCE = 400 V, IC = 50 A,
VGE = 15 V
- 72.2 - nC
Qge Gate to Emitter Charge - 13.5 - nC
Qgc Gate to Collector Charge - 28.5 - nC
Symbol Parameter Test Conditions Min. Typ. Max Unit
VFM Diode Forward Voltage IF = 20 A TC = 25oC- 2.1 2.6V
TC = 175oC - 1.94 -
Erec Reverse Recovery Energy
IF =20 A, dIF/dt = 200 A/s
TC = 175oC- 50 - uJ
trr Diode Reverse Recovery Time TC = 25oC - 31.8 - ns
TC = 175oC - 192 -
Qrr Diode Reverse Recovery Charge TC = 25oC - 50.6 - nC
TC = 175oC - 699 -
FGA5065ADF — 650 V, 50 A Field Stop Trench IGBT
©2015 Fairchild Semiconductor Corporation 4www.fairchildsemi.com
FGA5065ADF Rev. 1.0
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Saturation Voltage vs. Case
Characteristics Temperature at Variant Current Level
Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE
012345
0
30
60
90
120
150 20V
TC = 25oC
15V
12V 10V
VGE = 8V
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
012345
0
30
60
90
120
20V
TC = 175oC
15V
12V
10V
VGE = 8V
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
012345
0
30
60
90
120
150
Common Emitter
VGE = 15V
TC = 25oC
TC = 175oC
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
4 8 12 16 20
0
4
8
12
16
20
IC = 25A 50A
100A
Common Emitter
TC = 25oC
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
4 8 12 16 20
0
4
8
12
16
20
100A
IC = 25A
50A
Common Emitter
TC = 175oC
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
FGA5065ADF — 650 V, 50 A Field Stop Trench IGBT
©2015 Fairchild Semiconductor Corporation 5www.fairchildsemi.com
FGA5065ADF Rev. 1.0
Typical Performance Characteristics
Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics
Figure 9. Turn-on Characteristics vs. Figure 10. Turn-off Characteristics vs.
Gate Resistance Gate Resistance
Figure 11. Switching Loss vs. Figure 12. Turn-on Characteristics vs.
Gate Resistance Collector Current
110
10
100
1000
10000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Cres
Coes
Cies
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
30
0 20406080
0
3
6
9
12
15
Common Emitter
TC = 25oC
300V
400V
VCC = 200V
Gate-Emitter Voltage, VGE [V]
Gate Charge, Qg [nC]
0 1020304050
8
10
100
Common Emitter
VCC = 400V, VGE = 15V
IC = 50A
TC = 25oC
TC = 175oC
td(on)
tr
Switching Time [ns]
Gate Resistance, RG []
0 1020304050
4
10
100
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 50A
TC = 25oC
TC = 175oC
td(off)
tf
Switching Time [ns]
Gate Resistance, RG []
0 1020304050
0.1
1
4
Common Emitter
VCC = 400V, VGE = 15V
IC = 50A
TC = 25oC
TC = 175oC
Eon
Eoff
Switching Loss [mJ]
Gate Resistance, RG []
0 306090120150
10
100
500
Common Emitter
VGE = 15V, RG = 6
TC = 25oC
TC = 175oC tr
td(on)
Switching Time [ns]
Collector Current, IC [A]
FGA5065ADF — 650 V, 50 A Field Stop Trench IGBT
©2015 Fairchild Semiconductor Corporation 6www.fairchildsemi.com
FGA5065ADF Rev. 1.0
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs. Figure 14. Switching Loss vs.
Collector Current Collector Current
F i g u r e 1 5 . L o a d C u r r e n t V s . F r e q u e n c y F i g u r e 1 6 . S O A C h a r a c t e r i s t i c s
F ig ur e 1 7. Fo rw ar d C h a r a c t e r i s t i c s F ig ur e 1 8 . R e v e r s e R e c o v e ry Cu rr e n t
0 306090120150
4
10
100
200
Common Emitter
VGE = 15V, RG = 6
TC = 25oC
TC = 175oC
td(off)
tf
Switching Time [ns]
Collector Current, IC [A]
0 30 60 90 120 150
0.1
1
10
Common Emitter
VGE = 15V, RG = 6
TC = 25oC
TC = 175oC
Eon
Eoff
Switching Loss [mJ]
Collector Current, IC [A]
1k 10k 100k 1M
0
50
100
150
200
250
TC = 75oC
TC = 25oC
TC = 100oC
Square Wave
TJ <= 175oC, D = 0.5, VCE = 400V
VGE = 15/0V, RG = 6
Collector Current, [A]
Switching Frequency, f[Hz]
1 10 100 1000
0.1
1
10
100
200
DC
1ms
10 ms
*Notes:
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
10s
100s
Collector Current, Ic [A]
Collector-Emitter Voltage, VCE [V]
012345
1
10
80
TJ = 75oC
TJ = 25oC
TC = 25oC
TC = 75oC
TC = 175oC
TJ = 175oC
Forward Voltage, VF [V]
Forward Current, IF [A]
0 10203040
0
2
4
6
8
10
TC = 25oC
TC = 175oC
di/dt = 100A/s
di/dt = 200A/s
di/dt = 100A/s
di/dt = 200A/s
Reverse Recovery Currnet, Irr [A]
Forward Current, I
F
[A]
FGA5065ADF — 650 V, 50 A Field Stop Trench IGBT
©2015 Fairchild Semiconductor Corporation 7www.fairchildsemi.com
FGA5065ADF Rev. 1.0
Typical Performance Characteristics
Figure 19. Reverse Recovery Time Figure 20. Stored Charge
Figure 21.Transient Thermal Impedance of IGBT
Figure 22.Transient Thermal Impedance of Diode
0 10203040
0
50
100
150
200
250
300
TC = 25oC
TC = 175oC
di/dt = 200A/sdi/dt = 100A/s
Reverse Recovery Time, trr [ns]
Forward Current, IF [A]
010203040
0
200
400
600
800
1000
TC = 25oC
TC = 175oC
di/dt = 200A/s
di/dt = 100A/s
Stored Recovery Charge, Qrr [nC]
Forward Current, IF [A]
10-5 10-4 10-3 10-2 10-1 100
0.005
0.01
0.1
0.6
0.01
0.02
0.1
0.05
0.2
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.5
t
1
P
DM
t
2
10-5 10-4 10-3 10-2 10-1 100
0.01
0.1
1
2
0.01
0.02
0.1
0.05
0.2
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.5
t
1
P
DM
t
2
R
0.50
16.20
15.40
5.20
4.80
20.10
19.70
2.20
1.80
3.70
3.30
3.20
2.80
1.20
0.80
5.45 5.45
18.90
18.50
1.85
0.55
M
1.65
1.45
R
0.50
5.00
4.60
2.60
2.20
0.75
0.55
2.00
1.60
3° 4°
3°
3.30
3.10
7.20
6.80
13.80
13.40
16.96
16.56
20.30
19.70
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ
SC-65 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSION AND TOLERANCING PER
ASME14.5-2009.
D) DIMENSIONS ARE EXCLUSSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSSIONS.
E) DRAWING FILE NAME:
TO3PN03AREV2.
F) FAIRCHILD SEMICONDUCTOR.
13
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