3
BC818-25 / BC818-40
1997 Fairchild Semiconductor Corporation
C
E
BC818-25
BC818-40
NPN General Purpose Amplifier
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T A = 25°C unless otherwise noted
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.2 A.
Sourced from Process 38. See BC817 for characteristics.
Symbol Characteristic Max Units
*BC818-25 / B C818-40
PDTotal Device D issi pation
Derate above 25°C350
2.8 mW
mW/°C
RθJA Thermal Resistan ce, Junction to Ambient 357 °C/W
Symbol Parameter Value Units
VCEO Collector-Emi t ter Vo ltage 25 V
VCES Collector-Base Voltage 30 V
VEBO Emitter-Base Voltage 5.0 V
ICCollector Current - Continuo us 1.5 A
TJ, Tstg Operating and Stora ge Junction Temperature Ra nge -55 to +150 °C
SOT-23
Mark: 6F. / 6G. B
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Electrical Characteristics T A = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
ON CHARACTERISTICS
V(BR)CEO Col lector-Emitter Breakdow n Voltage IC = 10 mA, IB = 025V
V(BR)CES Collector-Base Breakdown Voltage IC = 100
µ
A, IE = 0 30 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10
µ
A, IC = 0 5.0 V
ICBO Collector-Cutoff Current VCB = 20 V
VCB = 20 V, TA = 150°C100
5.0 nA
µ
A
hFE DC Current Gain IC = 100 mA, VCE = 1.0 V - 25
- 40
IC = 500 mA, VCE = 1.0 V
160
250
40
400
600
VCE(sat)Colle ctor-Emitte r Saturation Voltag e IC = 500 mA, IB = 50 mA 0.7 V
VBE(on)Base-Emitter On Voltag e IC = 500 mA, VCE = 1.0 V 1.2 V
NPN General Purpose Amplifier
(continued)
BC818-25 / BC818-40
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Definition of Terms
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Obsolete
This datasheet contains the design specifications for
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