2SD669, 2SD669A Silicon NPN Epitaxial ADE-208-899 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 2SD669, 2SD669A Absolute Maximum Ratings (Ta = 25C) Ratings Item Symbol 2SD669 2SD669A Unit Collector to base voltage VCBO 180 180 V Collector to emitter voltage VCEO 120 160 V Emitter to base voltage VEBO 5 5 V Collector current IC 1.5 1.5 A Collector peak current I C(peak) 3 3 A Collector power dissipation PC 1 1 W 20 20 W PC * 1 Junction temperature Tj 150 150 C Storage temperature Tstg -55 to +150 -55 to +150 C Note: 2 1. Value at TC = 25C. 2SD669, 2SD669A Electrical Characteristics (Ta = 25C) 2SD669 2SD669A Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 180 -- -- 180 -- -- V I C = 1 mA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 120 -- -- 160 -- -- V I C = 10 mA, RBE = Emitter to base breakdown voltage V(BR)EBO 5 -- -- 5 -- -- V I E = 1 mA, IC = 0 Collector cutoff current I CBO -- -- 10 -- -- 10 A VCB = 160 V, IE = 0 60 -- 320 60 -- 200 VCE = 5 V, IC = 150 mA*2 hFE2 30 -- -- 30 -- -- VCE = 5 V, IC = 500 mA*2 VCE(sat) -- -- 1 -- -- 1 V I C = 500 mA, I B = 50 mA*2 Base to emitter voltage VBE -- -- 1.5 -- -- 1.5 V VCE = 5 V, IC = 150 mA*2 Gain bandwidth product f T -- 140 -- -- 140 -- MHz VCE = 5 V, IC = 150 mA*2 Collector output capacitance -- 14 -- -- 14 -- pF VCB = 10 V, IE = 0, f = 1 MHz DC current transfer ratio hFE1* Collector to emitter saturation voltage 1 Cob Notes: 1. The 2SD669 and 2SD669A are grouped by h FE1 as follows. 2. Pulse test. B C D 2SD669 60 to 120 100 to 200 160 to 320 2SD669A 60 to 120 100 to 200 -- Maximum Collector Dissipation Curve Area of Safe Operation 3 Collector current IC (A) Collector power dissipation PC (W) 30 20 10 (13.3 V, 1.5 A) 1.0 (40 V, 0.5 A) 0.3 DC Operation(TC = 25C) 0.1 (120 V, 0.04 A) 0.03 (160 V, 0.02A) 2SD669 2SD669A 0.01 0 50 100 Case temperature TC (C) 150 1 3 10 30 100 300 Collector to emitter voltage VCE (V) 3 2SD669, 2SD669A Typical Output Characteristecs 0.6 TC = 25C P C 2.0 = 20 W 1.5 0.4 1.0 0.2 0.5 mA VCE = 5 V 200 100 50 20 10 25 -25 0.8 Ta = 75C 5 5. 5.40.5 .0 4 3.5 3.0 2.5 Typical Transfer Characteristics 500 Collector current IC (mA) Collector current IC (A) 1.0 5 2 IB = 0 25 200 -25 150 100 VCE = 5 V 1 1 4 3 10 100 300 1,000 3,000 30 Collector current IC (mA) IC = 10 IB 1.0 0.8 0.6 5 C 250 1.2 0.4 =7 T Collector to Emitter Saturation Voltage vs. Collector Current 0.2 -2 25 5 5C a=7 0.2 0.4 0.6 0.8 1.0 Base to emitter voltage VBE (V) C DC current transfer ratio hFE 300 0 T DC Current Transfer Ratio vs. Collector Current 50 1 10 20 30 40 50 Collector to emitter voltage VCE (V) Collector to emitter saturation voltage VCE(sat) (V) 0 0 1 3 10 30 100 300 Collector current IC (mA) 1,000 2SD669, 2SD669A Gain Bandwidth Product vs. Collector Current 240 1.2 Gain bandwidth product fT (MHz) IC = 10 IB 1.0 25C TC = - 25 75 0.8 0.6 0.4 0.2 0 1 3 10 30 100 300 Collector current IC (mA) 1,000 200 VCE = 5 V Ta = 25C 160 120 80 40 0 10 30 100 300 Collector current IC (mA) 1,000 Collector Output Capacitance vs. Collector to Base Voltage Collector output capacitance Cob (pF) Base to emitter saturation voltage VBE(sat) (V) Base to Emitter Saturation Voltage vs. Collector Current 200 f = 1 MHz IE = 0 100 50 20 10 5 2 1 10 2 5 20 50 100 Collector to base voltage VCB (V) 5 2SD669, 2SD669A Package Dimensions Unit: mm 2.7 0.4 120 3.7 0.7 11.0 0.5 12 0 2.3 0.3 3.1 +0.15 -0.1 12 0 8.0 0.5 15.6 0.5 1.1 0.8 2.29 0.5 2.29 0.5 0.55 1.2 Hitachi Code JEDEC EIAJ Mass (reference value) 6 TO-126 Mod -- -- 0.67 g 2SD669, 2SD669A Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 7