2SD669AC - Hitachi Semiconductor - Datasheet.Directory

2SD669, 2SD669A

Silicon NPN Epitaxial

ADE-208-899 (Z)

1st. Edition

Sep. 2000

Application

Low frequency power amplifier complementary pair with 2SB649/A

Outline

1. Emitter

2. Collector

3. Base

TO-126 MOD

123

2SD669, 2SD669A

Absolute Maximum Ratings (Ta = 25°C)

Ratings

Item Symbol 2SD669 2SD669A Unit

Collector to base voltage VCBO 180 180 V

Collector to emitter voltage VCEO 120 160 V

Emitter to base voltage VEBO 55V

Collector current IC1.5 1.5 A

Collector peak current IC(peak) 33A

Collector power dissipation PC11W

120 20 W

Junction temperature Tj 150 150 °C

Storage temperature Tstg –55 to +150 –55 to +150 °C

Note: 1. Value at TC = 25°C.

2SD669, 2SD669A

Electrical Characteristics (Ta = 25°C)

2SD669 2SD669A

Item Symbol Min Typ Max Min Typ Max Unit Test conditions

Collector to base

breakdown voltage V(BR)CBO 180 — — 180 — — V IC = 1 mA, IE = 0

Collector to emitter

breakdown voltage V(BR)CEO 120 — — 160 — — V IC = 10 mA, RBE = ∞

Emitter to base

breakdown voltage V(BR)EBO 5——5——VI

= 1 mA, IC = 0

Collector cutoff current ICBO ——10——10µAV

CB = 160 V, IE = 0

DC current transfer ratio hFE1*160 — 320 60 — 200 VCE = 5 V, IC = 150 mA*2

hFE2 30 — — 30 — — VCE = 5 V, IC = 500 mA*2

Collector to emitter

saturation voltage VCE(sat) ——1 ——1 V I

= 500 mA,

IB = 50 mA*2

Base to emitter voltage VBE — — 1.5 — — 1.5 V VCE = 5 V, IC = 150 mA*2

Gain bandwidth product fT— 140 — — 140 — MHz VCE = 5 V, IC = 150 mA*2

Collector output

capacitance Cob — 14 — — 14 — pF VCB = 10 V, IE = 0,

f = 1 MHz

Notes: 1. The 2SD669 and 2SD669A are grouped by hFE1 as follows.

2. Pulse test.

BCD

2SD669 60 to 120 100 to 200 160 to 320

2SD669A 60 to 120 100 to 200 —

Maximum Collector Dissipation

Curve

0 50 100 150

Case temperature TC (°C)

Collector power dissipation PC (W)

1.0

0.3

Collector current IC (A)

0.01

0.03

0.1

33010 3001 100

Collector to emitter voltage VCE (V)

Area of Safe Operation

DC Operation(TC = 25°C)

(13.3 V, 1.5 A)

(40 V, 0.5 A)

(120 V, 0.04 A)

(160 V, 0.02A)

2SD669A

2SD669

2SD669, 2SD669A

3.5

5.5

4.0

4.5

5.0

Typical Output Characteristecs

TC = 25°C

PC = 20 W

IB = 0

0.5 mA

1.0

1.5

2.0

2.5

3.0

1.0

0.8

0.6

0.4

0.2

01020

Collector to emitter voltage VCE (V) 504030

Collector current IC (A)

Typical Transfer Characteristics

500

200

100

10 0.2 0.4 0.6 0.8 1.0

Collector current IC (mA)

Base to emitter voltage VBE (V)

VCE = 5 V

Ta = 75°C

–25

300

250

200

150

100

1130

DC current transfer ratio hFE

300100103 Collector current IC (mA) 1,000 3,000

DC Current Transfer Ratio

vs. Collector Current

VCE = 5 V

Ta = 75°C

–25

1.2

1.0

0.8

0.6

0.4

0.2

1 3 30 30010 100 1,000

Collector to Emitter Saturation Voltage

vs. Collector Current

Collector current IC (mA)

Collector to emitter saturation voltage VCE(sat) (V)

–25

= 75°C

IC = 10 IB

2SD669, 2SD669A

1.2

1.0

0.8

0.6

0.4

0.2

1 3 30 30010 100 1,000

Base to Emitter Saturation Voltage

vs. Collector Current

Collector current IC (mA)

Base to emitter saturation voltage VBE(sat) (V)

IC = 10 IB

TC = –25°C

240

200

160

120

010 300

Gain bandwidth product fT (MHz)

1,00010030

Collector current IC (mA)

Gain Bandwidth Product

vs. Collector Current

VCE = 5 V

Ta = 25°C

200

100

2110

Collector output capacitance Cob (pF)

502052

Collector to base voltage VCB (V) 100

Collector Output Capacitance

vs. Collector to Base Voltage

f = 1 MHz

IE = 0

2SD669, 2SD669A

Package Dimensions

3.1

φ+0.15

–0.1

8.0 ± 0.5

2.3 ± 0.3

1.1

3.7 ± 0.7

11.0 ± 0.5

15.6 ± 0.5

0.8

2.29 ± 0.5 2.29 ± 0.5 0.55 1.2

2.7 ± 0.4

120°

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

TO-126 Mod

—

0.67 g

Unit: mm

2SD669, 2SD669A

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for maximum rating, operating supply voltage range, heat radiation characteristics, installation

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