ma SEMICONDUCTOR MOTORCLA SC XSTRS/R F MOTOROLA TECHNICAL DATA uve o Bf uaez25u onaazas 4 ff 7-37-11 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed for high voltage, high speed power switching applications IRF&820 IRF821 IRF823 such as switching regulators, converters, solenoid TMOS POWER FETs and relay drivers. 2 and 2.6 AMPERES @ Silicon Gate for Fast Switching Speeds TDS(on) = 3 OHM @ Low rpsign) to Minimize On-Losses. Specified at 1 450 and 500 VOLTS Elevated Temperature TMOS tDS{on) = 4 OHM @ Rugged SOA is Power Dissipation Limited 450 VOLTS @ Source-to-Drain Diode Characterized for Use With inductive Loads o S S CASE 2214-04 s TO-220AB MAXIMUM RATINGS IRF Rating Symbol Unit OUTLINE DIMENSIONS 820 | 821 | 823 ba Drain-Source Voltage Voss | 500 | 450 | 450 | Vdc om c pli ' Drain-Gate Voltage VpGr | 500 | 450 | 450] Vde a (Ras = 1M) ot Le Gate-Source Voltage Ves +20 Vde folie vd Drain Current Adc | K Continuous Ip 25 2 z __t Pulsed lpm 10 8 b } -| Rn Total Power Dissipation @ Tc = 26C Pp 40 Adc . , , Derate above 25C 0.32 Te. Lowe Mee z Operating and Storage Temperature Range TJ. Tstg 55 to 160 c wort {ae THERMAL CHARACTERISTICS eed AMO TOLERANCHG PER ANSY . 7 CONTROLLING GEMENSION: ICH, Thermal Resistance oCAWW 2. DMZ DERNES A ZONE WHERE ALL BODY AND Junction to Case Rese 3.12 LEAD RREGIAARTTIES ARE ALLOWED, Junction to Ambient Rasa 62.5 Maximum Lead Temp. for Soldering Purposes, TL 300 c 1/8 from Case for 5 Seconds See tha MTP3N45 Designer's Data Sheet for a complete set of design curves far the product on this data sheet. MOTOROLA TMOS POWER MOSFET DATA 3-139MOTOROLA SC xsTRS/R FTSI~/] LUNE oj b3b72S4 IRF820, 821, 823 ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) 0069706 af , | Characteristic Symbol Min Max | Unit | OFF CHARACTERISTICS Drain-Source Breakdown Voltage ViBR}DSS Vdc (Veg = 0, Ip = 0.25 mA) (RF821, IRF823 450 _ IRF820 500 _- Zero Gate Voltage Drain Current lpss mAdc (Vps = Rated Vpss. Ves = 0} _ 0.25 (Vpg = 0.8 Rated Vpss. Ves = 0 Ty = 125C) - 1 Gate-Body Leakage Current, Forward IGssF _- 500 nAdc (VgsF = 20 Vde, Vpg = 0} Gate-Body Leakage Current, Reverse IGssr _ 500 nAdc (Vggr = 20 Vdc, Vos = 9) ON CHARACTERISTICS* Gate Threshold Voltage VaGSith) 2 4 Vde (Vps = Vas; Ip = 0.25 mA) Static Drain-Source On-Resistance 'DS{on) Ohm (Vgg = 10 Vde, Ip = 1 Ade) IRF820, IRF821 _ 3 IRF&23 _ 4 On-State Drain Current (Vgg = 10 V) 'D{on) Adc (Vps = 7.5 Vde) IRF820, IRF821 2.5 _ (Vpg = 8 Vde) IRF823 2 _ Forward Transconductance OFS mhos \Vps 2 7.5, Ip = 1A) IRF820, IRF821 1 - (Vps 2 8V, Ip = 1A) IRF823 1 _ DYNAMIC CHARACTERISTICS Input Capacitance Ciss _- 400 pF 5 (Vps = 25 V, Vas = 9 _ Output Capacitance f= 1 MHz) Coss 150 Reverse Transfer Capacitance Crss _ 40 SWITCHING CHARACTERISTICS* Turn-On Delay Time td{on) - 60 ns Rise Time Vpp ~ 200 V, Ip = 1 Apk, tr = 50 Turn-Off Delay Time Rgen = 50 Ohms) td{off) = 60 Fall Time tf _ 30 Total Gate Charge Qg 12 (Typ) 15 nc 7 (Vag = 10 V, Vos = 0.8 x _ Gate-Source Charge Rated Vogs; !p = Rated Ip) Qgs 6 (Typ) Gate-Drain Charge Qga 6 (Typ) _- SOURCE-DRAIN DIODE CHARACTERISTICS* Forward On-Voltage Vsp _ 1.5(1) Vde Forward Turn-On Time "Sano ton Limited by stray inductance Reverse Recovery Time ter 500 (Typ) | _ ns INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance la nH (Measured from the contact screw on tab to center of die) 3.5 (Typ) _ (Measured from the drain lead 0.25" from package to center of die) ~ 4.6 (Typ) - Internal Source Inductance Ls 7.5 (Typ) _ (Measured from the source lead 0,26" fram package to source bond pad) *Putse Test: Pulse Width < 300 ps, Duty Cycle < 2%. {1) Add 0.1 V for IRF820 and iRF821. MOTOROLA TMOS POWER MOSFET DATA 3-140