600V CoolMOS"C6 Power Transistor
IPx60R160C6
Electrical characteristics
Final Data Sheet 6 Rev. 2.1, 2010-02-09
4 Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified.
Table 6 Static characteristics
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0 V, ID=0.25 mA
Gate threshold voltage VGS(th) 2.5 3 3.5 VDS=VGS,ID=0.75 mA
Zero gate voltage drain current IDSS - - 1 µA VDS=600 V, VGS=0 V,
Tj=25 °C
- 10 - VDS=600 V, VGS=0 V,
Tj=150 °C
Gate-source leakage current IGSS - - 100 nA VGS=20 V, VDS=0 V
Drain-source on-state resistance RDS(on) - 0.14 0.16 !VGS=10 V, ID=11.3 A,
Tj=25 °C
- 0.37 - VGS=10 V, ID=11.3 A,
Tj=150 °C
Gate resistance RG- 6.4 - !f=1 MHz, open drain
Table 7 Dynamic characteristics
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Input capacitance Ciss - 1660 - pF VGS=0 V, VDS=100 V,
f=1 MHz
Output capacitance Coss - 100 -
Effective output capacitance,
energy related1)
1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS
Co(er) - 66 - VGS=0 V,
VDS=0...480 V
Effective output capacitance, time
related2)
2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS
Co(tr) - 314 - ID=constant, VGS=0 V
VDS=0...480V
Turn-on delay time td(on) - 13 - ns VDD=400 V,
VGS=13 V, ID=11.3 A,
RG= 1.7!
(see table 20)
Rise time tr- 13 -
Turn-off delay time td(off) - 96 -
Fall time tf- 8 -
Rev. 2.2, 2014-12-02