BSS138W N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits BVDSS RDS(ON) Max ID Max TA = +25C 50V 3.5 @ VGS = 10V 200mA * * * * * * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen- and Antimony-Free. "Green" Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, * * making it ideal for high efficiency power management applications. * * * Load Switch * * Case: SOT323 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe e3 (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (Approximate) SOT323 D D G G S S Top View Equivalent Circuit Top View Ordering Information (Note 4) Part Number BSS138W-7-F Notes: Case SOT323 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. BSS138W Document number: DS30206 Rev. 15 - 2 1 of 6 www.diodes.com August 2020 (c) Diodes Incorporated BSS138W Marking Information Date Code Key Year Code Month Code K38 K38 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: H = 2020) M or M = Month (ex: 9 = September) YM K38 YM SOT323 2003 P ... ... 2020 H 2021 I 2022 J 2023 K 2024 L 2025 M 2026 N 2027 O 2028 P 2029 R Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 1 2 3 4 5 6 7 8 9 O N D Maximum Ratings (@ TA = +25C, unless otherwise specified.) Characteristic Drain-Source Voltage Drain-Gate Voltage (Note 5) Gate-Source Voltage Drain Current (Note 6) Symbol VDSS VDGR VGSS ID Continuous Continuous Value 50 50 20 200 Unit V V V mA Value 200 625 -55 to +150 Unit mW C/W C Thermal Characteristics (@ TA = +25C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Symbol PD RJA TJ, TSTG Electrical Characteristics (@ TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 50 75 0.5 100 V A nA VGS = 0V, ID = 250A VDS = 50V, VGS = 0V VGS = 20V, VDS = 0V VGS(TH) RDS(ON) gFS 0.5 100 1.2 1.4 1.5 3.5 V mS VDS = VGS, ID = 250A VGS = 10V, ID = 0.22A VDS = 25V, ID = 0.2A, f = 1.0kHz Ciss Coss Crss tD(ON) tD(OFF) 50 25 8.0 20 20 pF pF pF ns ns VDS = 10V, VGS = 0V, f = 1.0MHz VDD = 30V, ID = 0.2A, RGEN = 50 5. RGS 20k. 6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Incorporated's suggested pad layout document, which can be found on our website at http://www.diodes.com/package-outlines.html. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. BSS138W Document number: DS30206 Rev. 15 - 2 2 of 6 www.diodes.com August 2020 (c) Diodes Incorporated BSS138W 0.6 0.8 0.5 0.4 0.3 0.2 0.1 0 0 0.7 0.5 0.3 0.2 0.1 0 0 1 VGS(th), GATE THRESHOLD VOLTAGE (V) 2.05 1.85 VGS = 10V ID = 0.5A 1.65 1.45 1.25 VGS = 4.5V 1.05 ID = 0.075A 0.85 4.5 1.8 1.6 1.2 1 0.8 0.6 0.4 0.2 0 -55 45 145 -5 95 TTJ,j, JUNCTION TEMPERATURE (C) Fig. 3 Drain-Source On Resistance vs. Junction Temperature -25 5 35 65 95 125 155 TTJ j, JUNCTION TEMPERATURE (C) Fig. 4 Gate Threshold Voltage vs. Junction Temperature 8 9 150 C VGS = 2.5V 3 -55C 2 1 150C 7 ON RESISTANCE () RDS(ON), STATIC DRAIN-SOURCE 25 C 4 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 ID, DRAIN CURRENT (A) Fig. 5 Drain-Source On Resistance vs. Drain Current Document number: DS30206 Rev. 15 - 2 6 5 25C 4 3 -55C 2 1 0 0 BSS138W VGS = 2.75V 8 6 5 ID = 1.0mA 1.4 0.65 -55 ON RESISTANCE () 2.5 0.5 1 1.5 2 3 3.5 4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Transfer Characteristics 2 2.25 ON RESISTANCE ( ) R DS(ON), NORMALIZED DRAIN-SOURCE 150C 0.4 2.45 RDS(ON), STATIC DRAIN-SOURCE 25C 0.6 5 6 9 10 2 3 4 7 8 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Drain-Source Current vs. Drain-Source Voltage 7 -55C VDS = 1V ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN-SOURCE CURRENT (A) C TTJj == 25 25C 3 of 6 www.diodes.com 0 0.1 0.15 0.25 0.2 ID, DRAIN CURRENT (A) Fig. 6 Drain-Source On Resistance vs. Drain Current 0 0.05 August 2020 (c) Diodes Incorporated BSS138W 3.5 6 VGS = 10V VGS = 4.5V 4 3 25C 2 -55C 1 150C 3 ON RESISTANCE () RDS(ON), STATIC DRAIN-SOURCE 5 ON RESISTANCE () RDS(ON), STATIC DRAIN-SOURCE 150C 2.5 2 25C 1.5 1 -55C 0.5 0 0 0 0.3 0.4 0.5 0.2 ID, DRAIN CURRENT (A) Fig. 8 Drain-Source On Resistance vs. Drain Current 0.1 0.2 0.3 0.4 0.5 VDS, DRAIN-SOURCE VOLTAGE ID, DRAIN CURRENT (A) (V) Fig. 7 Drain-Source On Resistance vs. Drain Current 0 0.1 100 1 VGS = 0V f = 1MHz C, CAPACITANCE (pF) ID, DIODE CURRENT (A) Ciss 150C 0.1 -55 C 25C 0.01 10 Coss Crss 0.001 0 0.2 0.4 0.8 1 1.2 0.6 VSD, DIODE FORWARD VOLTAGE (V) Fig. 9 Body Diode Current vs. Body Diode Voltage BSS138W Document number: DS30206 Rev. 15 - 2 4 of 6 www.diodes.com 1 0 30 5 10 15 20 25 VDS, DRAIN SOURCE VOLTAGE (V) Fig. 10 Capacitance vs. Drain Source Voltage August 2020 (c) Diodes Incorporated BSS138W Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. D A2 c A1 e L a b E E1 F SOT323 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.90 1.00 0.95 b 0.25 0.40 0.30 c 0.10 0.18 0.11 D 1.80 2.20 2.15 E 2.00 2.20 2.10 E1 1.15 1.35 1.30 e 0.650 BSC e1 1.20 1.40 1.30 F 0.375 0.475 0.425 L 0.25 0.40 0.30 a 0 8 -All Dimensions in mm e1 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X Y Dimensions Y1 G C G X Y Y1 Value (in mm) 0.650 1.300 0.470 0.600 2.500 C BSS138W Document number: DS30206 Rev. 15 - 2 5 of 6 www.diodes.com August 2020 (c) Diodes Incorporated BSS138W IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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