BSS138W
Document number: DS30206 Rev. 15 - 2
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August 2020
© Diodes Incorporated
BSS138W
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summa r y
BVDSS RDS(ON) Max ID Max
TA = +25°C
50V 3.5Ω @ VGS = 10V 200mA
Description and Applications
This MOSFET has been designed to minimize the on-state
resistanc e (RDS(ON)) yet maint ai n superior switching performance,
making it ideal for high effici ency power managem ent applications.
Load Switch
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen- and Antimony-Free. “Green” Device (Note 3)
For automotive applications requiring specific change
control (i.e. parts qualified to AEC-Q100/101/200, PPAP
capable, and manufactured in IATF 16949 certified facili ties),
please contact us or your local Diodes r epr esentative.
https://www.diodes.com/quality/product-definitions/
Mechanical Data
Case: SOT323
Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammabilit y Cl assif icati on Rat i ng 94V-0
Moisture Sensitivi t y: Level 1 per J-STD-020
Terminals: Matte Ti n Finish Annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderabl e per MIL-STD-202, Method 208
Terminal Connecti ons: See Diagram
Weight: 0.006 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
BSS138W-7-F
SOT323
3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Ant imony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
SOT323
Top View
GS
D
Top View
e3
D
S
G
BSS138W
Document number: DS30206 Rev. 15 - 2
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August 2020
© Diodes Incorporated
BSS138W
Marking Information
Date Code Key
Year
2003
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
Code
P
H
I
J
K
L
M
N
O
P
R
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Maximum Ratings (@ TA = +25°C, unless otherwise speci fied.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
50
V
Drain-Gate Voltage (Note 5)
VDGR
50
V
Gate-Source Voltage Continuous
VGSS
±20
V
Drain Current (Note 6) Continuous
ID
200
mA
Thermal Characteristics (@ TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 6)
PD
200
mW
Thermal Resistance, Junction to Ambient (Not e 6)
RθJA
625
°C/W
Operating and Storage Tem perature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CH ARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
50
75
V
VGS = 0V , ID = 250µA
Zero Gate Voltage Drain Current
IDSS
0.5
µA
VDS = 50V, VGS = 0V
Gate-Body Leakage
IGSS
±100
nA
VGS =
±
20V, VDS = 0V
ON CHARACTERIS TICS (Note 7)
Gate Threshold Voltage
VGS(TH)
0.5
1.2
1.5
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance
RDS(ON)
1.4
3.5
VGS = 10V, ID = 0.22A
Forward Transconduct ance
gFS
100
mS
VDS = 25V, ID = 0.2A, f = 1.0kHz
DYNAMIC CH ARACTERISTICS (Note 8)
Input Capacitance
Ciss
50
pF
VDS = 10V, VGS = 0V, f = 1.0MHz
Output Capacit ance
Coss
25
pF
Reverse Transfer Capaci t ance
Crss
8.0
pF
Turn-On Delay Time
tD(ON)
20
ns
V
DD
= 30V, I
D
= 0.2A,
RGEN = 50
Turn-Off Delay Time
tD(OFF)
20
ns
Notes: 5. RGS 20k.
6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diod es Inc o rp or ate d’ s suggested pad layout documen t, whic h
can be found on our website at http://www.diodes.com/package-outlines.html.
7. Short duration pulse test used to minimize self-heati n g effe c t.
8. Guaran t e ed b y desig n. Not s ubj ec t t o prod uction testi ng.
K38
YM
K38
YM
K38 = Product Type Marking Code
YM = Date Code Marking
Y
or Y = Year (ex: H = 2020)
M
or M = Month (ex: 9 = September)
SOT323
BSS138W
Document number: DS30206 Rev. 15 - 2
3 of 6
www.diodes.com
August 2020
© Diodes Incorporated
BSS138W
0
0.1
0.2
0.3
0.4
0.5
0.6
1
032 5
4 7
68910
I , DRAIN-SOURCE CURRENT (A)
D
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Drain-Source Current vs. Drain-Source Voltage
DS
T = 25 C
j
°
0
V , GA T E-SOURCE VOLTAGE (V)
Fig. 2 Transfer Characteristics
GS
0.1
0.2
0.3
0.5
0.4
0.6
0.7
0.8
0 1 1.50.5 23.5 44.52.5 3
I , DRAIN-SOURCE CURRENT (A)
D
-55 C°
150 C°
25 C°
V = 1V
DS
0.65
T, JUNCTION TEMPERA TURE (°C)
Fig. 3 Drain-Source On Resistance vs. Junction Temperature
j
0.85
1.05
1.25
1.65
1.45
1.85
2.05
2.25
2.45
-55 -5 45 95 145
V = 10V
GS
V = 4.5V
GS
I = 0.5A
D
I = 0.075A
D
R , NORMALIZED DRAIN-SOURCE
ON RESISTANCE ( )
DS(ON)
0
0.2
0.4
0.6
0.8
1
1.4
1.2
2
1.8
1.6
-55 5-25 35 9565 125 155
V , GATE THRESHOLD VOLTAGE (V)
GS(th)
T, JUNCTION TEMPERATURE (°C)
Fig. 4 Gate Threshold Voltage vs. Junction Temperature
j
I = 1.0mA
D
0
I , DRAIN CURRENT (A)
Fig. 5 Drain-Source On Resistance vs. Drain Current
D
1
2
3
4
5
6
7
8
00.02 0.04 0.06 0.08 0.160.140.120.1
150 C°
-55 C°
25 C°
V = 2.5V
GS
R , STATIC DRAIN-SOURCE
ON RESISTANCE ( )
DS(ON)
0
I , DRAIN CURRENT (A)
Fig. 6 Drain-Source On Resist ance vs. Drain Current
D
1
2
3
5
4
6
7
8
9
00.05 0.1 0.2
0.15 0.25
150 C°
-55 C°
25 C°
V = 2.75V
GS
R , STATIC DRAIN-SOURCE
ON RESISTANCE ( )
DS(ON)
C)
C)
TJ = 25°C
TJ,
TJ
BSS138W
Document number: DS30206 Rev. 15 - 2
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August 2020
© Diodes Incorporated
BSS138W
0
1
2
3
4
5
6
00.1 0.2 0.3 0.4 0.5
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 7 Drain-Source On Resist ance vs. Drain Current
DS
150 C°
-55 C°
25 C°
V = 4.5V
GS
R , STATIC DRAIN-SOURCE
ON RESISTANCE ( )
DS(ON)
0
0.5
1
1.5
2
2.5
3
3.5
00.1 0.2 0.3 0.4 0.5
I , DRAIN CURRENT (A)
Fig. 8 Drain-Source On Resist ance vs. Drain Current
D
150 C°
-55 C°
25 C°
V = 10V
GS
R , STATIC DRAIN-SOURCE
ON RESISTANCE ( )
DS(ON)
I , DIODE CURRENT (A)
D
0.001
0.01
0.1
1
V , DIODE FORWARD VOLTAGE (V)
Fig. 9 Body Diode Current v s. Body Diode Voltage
SD
00.2 0.4 0.6 0.8 11.2
150 C°
-55 C°
25 C°
C, CAPACITANCE (pF)
1
10
100
V , DRAIN SOURCE VOLT AGE (V)
Fig. 10 Capacitance v s. Drain Source Voltage
DS
0 5 10 15 20 25 30
V = 0V
f = 1MHz
GS
C
rss
C
oss
C
iss
ID, DRAIN CURRENT (A)
BSS138W
Document number: DS30206 Rev. 15 - 2
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August 2020
© Diodes Incorporated
BSS138W
Package Ou t lin e Dim en sio ns
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT323
Dim
Min
Max
Typ
A1
0.00
0.10
0.05
A2
0.90
1.00
0.95
b
0.25
0.40
0.30
c
0.10
0.18
0.11
D
1.80
2.20
2.15
E
2.00
2.20
2.10
E1
1.15
1.35
1.30
e
0.650 BSC
e1
1.20
1.40
1.30
F
0.375
0.475
0.425
L
0.25
0.40
0.30
a
0°
8°
--
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
Dimensions
Value
(in mm)
C
0.650
G
1.300
X
0.470
Y
0.600
Y1
2.500
a
E1E
Fe1
b
L
c
e
A2
A1
D
Y1 G
Y
X
C
BSS138W
Document number: DS30206 Rev. 15 - 2
6 of 6
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August 2020
© Diodes Incorporated
BSS138W
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written approval of the Chief Executive Off icer of Diodes I ncorporat ed. As us ed herein:
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1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in si gnifi cant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers repres ent that they have all necessary expertise i n the safety and regulatory ramif ications of their life support devices or systems, and
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representati ves against any dam ages arising out of the use of Diodes Incorporat ed products i n such safety-cri tical, life support devices or systems.
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